• IEMEK Journal of Embedded Systems and Applications
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• v.13 no.3
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• pp.133-141
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• 2018

There are increasing interests on smart home systems. However, most of the existing works focus on the functionality itself. In this paper, we propose an extensible smart home system based on low power networking such as CoAP, 6LoWPAN, and Zigbee. The proposed home IoT system consists of Home APP, Home Server, Home Broker, and Power Devices. Each component of the system is connected by the low-power network technologies aforementioned. As the end device, Power Device senses the current consumption of the attached appliance and controls the power to it. Power Device reports the sensing data to Home Server via Home Broker. The Home Broker enhances the scalability of the system. Home Broker extends the service area and the user's services, and it manages the connection of the underlying devices and processes, and transmits data to Home Server from Power Devices. Through the experimental evaluation, we show that the proposed system achieves the design goals such as extensibility and low power networking.

• Journal of Ocean Engineering and Technology
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• v.4 no.1
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• pp.43-48
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• 1990

The results of previous works on the wave energy conversion do not seem to be satisfactory due to irregularity, and the non-linear hydrodynamic effect which is inevitably featured due to the structural complexity of the ocean wave energy conversion device. These may cause the difficulty estimating the extracted wave power. In this paper a study on estimating the extracted wave power and its ratio. The present authors have developed another method estimating the extracted wave power using the three dimensional source distribution method, which was turned out to be an improved one. It has been observed that the present results may be used for the control of the wave energy conversion device and the optimal design has been derived from the several case studies.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.9
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• pp.78-85
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• 2008

Piezoelectric materials have been investigated as vibration energy converters to power wireless devices or MEMS devices due to the recent low power requirements of such devices and the advancement in miniaturization technology. Piezoelectric power generation can be an alternative to the traditional power source-battery because of the presence of facile vibration sources in our environment and the potential elimination of the maintenance required for large volume batteries. This paper represents the new power source which supplies energy device node. This system, called "energy harvesting system", with piezo materials scavenges extra energy such as vibration and acceleration from the environment. Then it converts the mechanical energy scavenged to electrical energy for powering device This paper explains the properties of piezo material through theoretical analysis and experiments The developed system provides a solution to overcome the critical problem of making up wireless device networks.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.4
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• pp.222-228
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• 2015

Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device, it is essential to increase its conductance. However, a trade-off relationship between the breakdown voltage and conductance of the device have been the critical difficulty to improve. In this paper, theoretical analysis of electrical benefits on single floating island power MOSFET is proposed. By the method, the optimization point has set defining the doping limit under single floating island structure. The numerical multiple 2.22 was obtained which indicates the doping limit of the original device, improving its ON state voltage drop by 45%.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.367-368
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• 2014

This paper investigates characteristics of high power semiconductor device losses in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor device of press-pack type IGCT of 6.5kV is considered in this paper. Analysis is performed based on neutral point clamped (NPC) 3-level back-to-back type voltage source converter (VSC) supplied from grid voltage of 4160V. This paper describes total loss distribution at worst case under inverter and rectifier operating mode for the power semiconductor switches. The loss analysis is confirmed through PLECS simulations. In addition, the loss factors due to di/dt snubber and ac input filter are presented. The investigation result shows that IGCT type semiconductor devices generate the total efficiency of 97.74% under the rated condition.

• Journal of information and communication convergence engineering
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• v.17 no.3
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• pp.221-226
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• 2019

In this work, a transmitter/receiver front-end module (T/R FEM) with an automatic Tx/Rx switching scheme for a 2.4 GHz microwave power transfer is developed for a retro-reflective beamforming scheme. Recently, research on wireless power transfer techniques has moved to wireless charging systems for mobile devices. Retro-reflective beamforming is a good candidate for tracking the spatial position of a mobile device to be charged. In Tx mode, the T/R FEM generates a minimum of 1 W. It also comprises an amplitude and phase monitoring port for transmitting RF power. In Rx mode, it passes an Rx pilot signal from a mobile device to a digital baseband subsystem to recognize the position of the mobile device. The insertion loss of the Rx signal path is 4.5 dB. The Tx and Rx modes are automatically switched by detecting the Tx input power. This T/R FEM is a design example of T/R FEMs for wireless charging systems based on a retro-reflective beamforming scheme.

• Journal of Biosystems Engineering
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• v.30 no.3 s.110
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• pp.147-154
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• 2005

The improved hitch device, which connecting the trailer to power tiller, was developed. This device, composed with spring and rubber, could reduce the vibration and shock levels during driven on off-road. The vertical vibration accelerations for the improved hitch device were measured at 6 positions, i.e. engine, hitch, seat, and three points in trailer (front, middle, and rear) for not driving but at low engine speed of 500 rpm, and compared with the existing hitch device. The results of this study could be summarized as follows; The average vibration acceleration up to 120 Hz was $0.4m/s^2$ at engine part, but it was 0.08 and $0.05m/s^2$ at trailer for existing and improved hitch device, respectively. About $38\%$ of average acceleration level could be absorbed for the improved hitch device compared with existing hitch device. The average vibration acceleration up to 40 Hz was reduced to 0.12 and $0.06m/s^2$ at trailer for existing and improved hitch device respectively, showing the reduction effect of $50\%$. The maximum acceleration occurred at up to 20 Hz of low frequency was much higher than total acceleration occurred at up to 120 Hz, which means that much loss or damage could be occurred during transporting of agricultural products on off-road. The portions of average acceleration occurred at up to 20 Hz of low frequency were $27\%\;and\;21\%$ for the existing and improved hitch device, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.389.2-389.2
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• 2016

The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

• Proceedings of the KIEE Conference
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• 2007.10c
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• pp.172-174
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• 2007

An electronic watt-hour meter with high-precision measurement technology can provide many valuable metering data of a real-time system measurements, such as per-phase voltage, ampere, active power, reactive power, apparent power, power factor, and system frequency. Also many of accumulated metering data such as active energy, reactive energy, apparent energy, and load profile can be gettable from an electronic watt-hour meter[1]. This paper presents an approach of the small-sized AMR (Automatic Meter Reading) that provides customers with a very valuable electrical service. This AMR service transmits lots of a valuable metering data by using ZigBee communication module, so that users resided in their premises can use the information to audit a power quality and improve their electrical conditions by using the PQ monitoring device equipped with ZigBee receiver. This PQ monitoring device shows metering data on LCD and transmits to the PC through an internal network. Also, the device can keep the valuable meter data into a built-in non-volatile memory. The final goal of this paper is to better understand the power quality of electrical systems and offer the power qualify information for the convenience of all power consumers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.280-283
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• 2004

This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.