• 제목/요약/키워드: Potential mobility

검색결과 372건 처리시간 0.027초

Electrical Properties of TiO2 Thin Film and Junction Analysis of a Semiconductor Interface

  • Oh, Teresa
    • Journal of information and communication convergence engineering
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    • 제16권4호
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    • pp.248-251
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    • 2018
  • To research the characteristics of $TiO_2$ as an insulator, $TiO_2$ films were prepared with various annealing temperatures. It was researched the currents of $TiO_2$ films with Schottky barriers in accordance with the contact's properties. The potential barrier depends on the Schottky barrier and the current decreases with increasing the potential barrier of $TiO_2$ thin film. The current of $TiO_2$ film annealed at $110^{\circ}C$ was the lowest and the carrier density was decreased and the resistivity was increased with increasing the hall mobility. The Schottky contact is an important factor to become semiconductor device, the potential barrier is proportional to the hall mobility, and the hall mobility increased with increasing the potential barrier and became more insulator properties. The reason of having the high mobility in the thin films in spite of the lowest carrier concentration is that the conduction mechanism in the thin films is due to the band-to-band tunneling phenomenon of electrons.

대중교통 이동성과 잠재수요를 이용한 도시 내 지역 간 직결노선버스 기종점 선정에 관한 연구 (A Study of Origin and Destination Decision for a Direct Bus Line in a City with Transit Mobility and Potential Demand)

  • 장경욱;김황배;박홍식;박선복
    • 대한토목학회논문집
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    • 제31권4D호
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    • pp.547-553
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    • 2011
  • 본 연구는 대중교통취약지역 평가척도인 이동성 지표와 잠재수요에 대한 개념을 새로 정립하고 이들 지표를 적용하여 대중교통이동성 취약지역 선정과 이들 지역 간을 연결하는 대중교통 직결노선 선정방법을 제시하였다. 이동성 지표와 잠재수요평가지표를 적용하여 4개 대도시권의 대중교통 취약지역을 선정하고 이들 지역 간을 운행하는 직결 버스 노선을 사례연구를 통해 분석하였다. 분석결과 대중교통 이동성 사각지대는 대중교통통행시간이 승용차에 비해 현저히 높게 소요되거나 대중교통노선의 서비스가 제공되지 않은 지역으로 분석되었다. 또한, 이러한 대중교통취약지역을 해소하기 위한 직결버스노선은 대중교통통행시간을 승용차 통행시간과 동등한 수준을 유지할 수 있도록 자동차 전용도로로 운행하고 승 하차로 인한 통행시간 손실을 최소화 시키고 연계를 극대화 할 수 있는 노선체계가 구축되어야 할 것으로 분석되었다.

변형 힘을 받는 p형 $Si_{1-x}Ge_x$의 이동도 연구 (Study of the Mobility for Strained p-type $Si_{1-x}Ge_x$ Alloys)

  • 전상국
    • 한국전기전자재료학회논문지
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    • 제11권3호
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    • pp.181-187
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    • 1998
  • The ionization energy and degree of ionization for p-type $Si_{1-x}Ge_x$ with boron doping are calculated taking into account the screening and broadening effects. The drift and Hall mobilities are then calculated using the relaxation time approximation and compared with the previously reported measurement data for relaxed and strained $Si_{1-x}Ge_x$ alloys to estimate the alloy scattering potential. From a fit, the alloy scattering potential is found to be 0.5 eV. The in-plane drift mobility for p-type strained $Si_{1-x}Ge_x$ grown on (001) Si substrate is approximately 1+$10x^2$ times higher than that for bulk Si in the high doping range.

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The Nexus Between Social Mobility and Regional Disparity: Empirical Evidence from India

  • SINGH, Anuradha;MUNIYOOR, Krishna
    • The Journal of Asian Finance, Economics and Business
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    • 제9권1호
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    • pp.229-240
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    • 2022
  • This article examines the link between regional disparity and social mobility in India. There has been a steady rise in economic inequality in India. The rapid economic growth coupled with a rise in income inequality is a serious concern in India. While the emphasis is on inclusive growth, it appears difficult to tackle the problem without looking at the intricacies of the problem. The Social Mobility Index is an important tool that focuses on bringing long-term equality by identifying priority policy areas in the country. We used a multivariate statistical approach to construct a social mobility index at the regional level by considering several social and economic variables. Our findings show that while the Union Territory of Delhi ranks first in the social mobility index, Chhattisgarh has the least social mobility. From a policy perspective, a comprehensive examination of the determinants of the social mobility index shows that health, education access, and quality, and equity of education are of great importance in improving social mobility. Considering India's potential economic growth resulting from its 'demographic dividend' and improved access, markets, and technology, increasing social mobility through facilitating equal opportunities in society is key to achieving inclusive growth.

Stilbenequinone의 합성과 전자 수송(II) (Synthesis and Electron Transport of Novel Stilbenequinone(II))

  • 조종래;김명환;양종헌;김범준;정수태;손세모
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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    • pp.1002-1005
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    • 2002
  • We have synthesized novel stilbenequinone derivatives(ASQ, PSQ) and investigated the properties of their electron drift mobility. Characteristics of the ionization potential Ip and electron affinity Ea of the ASQ were investigated by determining both oxidation and reduction potentials. There were estimated Ip = 7.1 eV and Ea = 3.6 eV. The electron drift mobility of ASQ mixture(R:t-Bu 10wt%) was $1.5{\times}10^{-5}cm^2/V{\cdot}sec$ at $6.15{\times}10^{5}V/cm$ and $1.3{\mu}m$ thickness.

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Electronic Ink using the Electrophoretic High Mobility Particles

  • Kim, Chul-Am;Kang, Seung-Youl;Kim, Gi-Heon;Ahn, Seong-Deok;Oh, Ji-Young;Suh, Kyung-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.969-971
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    • 2007
  • The black/white electronic ink containing high mobility white nano particles and the organic black pigment particles dispersed in dielectric fluid were prepared. A charge control agent affects the electrophoretic zeta potentials of white particle, which show the maximum value in zeta potential. The electronic ink panel fabricated with the charged white particles and the black particles exhibits more than 15:1 contrast ratio at 10V.

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비정질 실리콘 박막 트랜지스터에서 전계효과 이동도의 Chebyshev 근사 (Chebyshev Approximation of Field-Effect Mobility in a-Si:H TFT)

  • 박재홍;김철주
    • 전자공학회논문지A
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    • 제31A권4호
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    • pp.77-83
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    • 1994
  • In this paper we numerically approximated the field-effect mobility of a-Si:H TFT. Field-effect mobility, based on the charge-trapping model and new effective capacitance model in our study, used Chebyshev approximation was approximated as the function of gate potential(gate-to-channel voltage). Even though various external factors are changed, this formula can be applied by choosing the characteristic coefficients without any change of the approximation formula corresponding to each operation region. Using new approximated field-effect mobility formula, the dependences of field-effect mobility on materials and thickness of gate insulator, thickness of a-Si bulk, and operation temperature in inverted staggered-electrode a-Si:H TFT were estimated. By this was the usefulness of new approximated mobility formula proved.

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Analysis of a Decentralized Mobility Management Support for u-City Wireless Network Infrastructure

  • Caytiles, Ronnie D.;Park, Byungjoo
    • 한국정보기술학회 영문논문지
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    • 제10권2호
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    • pp.73-81
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    • 2020
  • The number of mobile devices roaming into a ubiquitous city (u-city) continues to rise as wireless systems have been widely deployed. The number of mobile devices also varies with time, and they tend to frequently change their locations. In addition, the available wireless access networks may belong to different domains, administrations, management, and internet service providers (ISPs). A fusion of overlapping heterogeneous wireless access networks (e.g., WiMax, Wi-Fi, LTE, etc.) serves the u-city in order to reach different coverage. In this context, technical challenges arise in mobility management for heterogeneous networks to realize their potential coverage and capacity benefits. This paper deals with the analysis of a decentralized mobility management support for u-City wireless network infrastructure. This scheme takes advantage of the features of the fully-distributed model of networked-based mobility management protocol to alleviate and realize the ubiquitous requirements of a u-City.

도심환경교통(Urban Air Mobility, UAM) 도입에 따른 소음 문제에 대한 시론 -UAM 소음의 특성과 잠재적 건강영향: 연구 방향 및 관리를 위한 정책적 고려사항- (Perspectives on Noise Issues Arising from the Introduction of Urban Air Mobility (UAM) -Characteristics and Potential Health Effects of UAM Noise: Research Directions and Policy Considerations-)

  • 함승헌
    • 한국환경보건학회지
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    • 제50권2호
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    • pp.81-82
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    • 2024
  • Urban air mobility (UAM) is emerging as an innovative transportation solution for cities. However, the potential noise impact on urban life must be carefully examined. Continuous exposure to UAM noise, with its unique frequency characteristics and temporal variability, may adversely affect citizens' health by causing sleep disorders, cardiovascular disease, and cognitive impairmenet, particularly in children. NASA has formed a UAM Noise Working Group to study this issue comprehensively. In Korea, the Seoul Metropolitan Government's UAM demonstration project is expected to accelerate related research and development. Scientific analysis, including noise measurement, prediction modeling, and health impact assessment, must be prioritized. Measures to minimize noise should be established based on this evidence, such as optimizing flight modes, developing noise reduction technologies, and establishing new noise management standards. Transparency and social consensus are crucial throughout this process. Expert review and open communication with civil society are necessary to address related concerns. Sharing demonstration project results and providing opportunities to experience UAM noise through digital twin simulations can help address public concerns and build social consensus. Proactively and scientifically tackling noise issues is essential for the sustainable development and successful integration of UAM into daily life.

A new Approach to Moving Obstacle Avoidance Problem of a Mobile Robot

  • 고낙용
    • 한국생산제조학회지
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    • 제7권1호
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    • pp.9-21
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    • 1998
  • This paper a new solution approach to moving obstacle avoidance problem of a mobile robot. A new concept avoidability measure (AVM) is defined to describe the state of a pair of a robot and an obstacle regarding the collision between them. As an AVM, virtual distance function (VDF), is derived as a function of the distance from the obstacle to the robot and outward speed of the obstacle relative to the robot. By keeping the virtual distance above some positive limit value, the robot avoids the obstacle. In terms of the VDF ,an artificial potential field is constructed to repel the robot away from the obstacle and to attract the robot toward a goal location. At every sampling time, the artificial potential field is updated and the force driving the robot is derived from the gradient of the artificial potential field. The suggested algorithm drives the robot to avoid moving obstacles in real time. Since the algorithm considers the mobility of the obstacle as well as the distance, it is effective for moving obstacle avoidance. Some simulation studies show the effectiveness of the proposed approach.

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