• Title/Summary/Keyword: Post annealing

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Growth of the single and epitaxial MgO film on Fe(001)

  • Kim, Hi-Dong;Dugerjav, Otgonbayar;Seo, Jae-M.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.355-355
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    • 2010
  • The epitaxial growth of MgO film on Fe(001) has been investigated by scanning tunneling microscopy (STM). After confirming the clean Fe(001)-c($2{\times}2$) substrate by STM, Mg was deposited at room temperature (RT) under $O_2$ partial pressure of $10^{-7}\;Torr$. The MgO was grown as clusters, not as an epilayer even after postannealing at $400^{\circ}C$, as shown in Figure (a). On the contrary, when Mg was deposited on Fe(001)-c($2{\times}2$) at RT and post-oxidized through exposing $O_2$ at partial pressure $10^{-7}\;Torr$, the thin-layered film with some clusters was formed. Extended-annealing at $400^{\circ}C$ reduced the cluster density, and finally the single and epitaxial MgO-c($2{\times}2$) film was formed on Fe(001)-c($2{\times}2$) as shown in Figure (b). This ultrathin MgO film formed on Fe is expected to be applied to many technological applications, such as catalysis, microelectronics, and magnetic devices.

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Microstructure-Properties Relationships of Ti-6Al-4V Parts Fabricated by Selective Laser Melting

  • Mezzetta, Justin;Choi, Joon-Phil;Milligan, Jason;Danovitch, Jason;Chekir, Nejib;Bois-Brochu, Alexandre;Zhao, Yaoyao Fiona;Brochu, Mathieu
    • International Journal of Precision Engineering and Manufacturing-Green Technology
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    • v.5 no.5
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    • pp.605-612
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    • 2018
  • This work investigates the relationships between the static mechanical properties of Ti-6Al-4V manufactured through selective laser melting (SLM) and post-process heat treatments, namely stress relieve, annealing and hot isostatic pressing (HIP). In particular, Ti-6Al-4V parts were fabricated in three different build orientations of X, Z, and $45^{\circ}$ to investigate the multi-directional mechanical properties. The results showed that fully densified Ti-6Al-4V parts with densities of up to 99.5% were obtained with optimized SLM parameters. The microstructure of stress relieved and mill annealed samples was dominated by fine ${\alpha}^{\prime}$ martensitic needles. After HIP treatment, the martensite structure was fully transformed into ${\alpha}$ and ${\beta}$ phases (${\alpha}+{\beta}$ lamellar). Within the realm of tensile properties, the yield and ultimate strength values were found statistically similar with respect to the built orientation for a given heat treatment. However, the ductility was found orientation dependent for the HIP samples, where a lower value was observed for samples built in the X direction.

Optimization of Electrical and Optical Properties of a-IZO Thin Film for High-Efficiency Solar Cells (고효율 태양전지용 a-IZO 박막의 전기적 및 광학적 특성 최적화에 관한 연구 )

  • Somin Park;Sungjin Jeong;Jiwon Choi;Youngkuk Kim;Junsin Yi
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.1
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    • pp.49-55
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    • 2023
  • The deposition of indium zinc oxide (IZO) thin films was carried out on substrate at room temperature by RF magnetron sputtering. The effects of substrate temperature, RF power and deposition pressure were investigated with respect to physical and optical properties of films such as deposition rate, electrical properties, structure, and transmittance. As the RF power increases, the resistivity gradually decreases, and the transmittance slightly decreases. For the variation of deposition pressure, the resistivity greatly increases, and the transmittance is decreased with increasing deposition pressure. As a result, it was demonstrated that an IZO film with the resistivity of 3.89 × 10-4 Ω∙cm, the hole mobility of 51.28 cm2/Vs, and the light transmittance of 86.89% in the visible spectrum at room temperature can be prepared without post-deposition annealing.

Recovery of Radiation-Induced Damage in MOSFETs Using Low-Temperature Heat Treatment (저온 열처리를 통한 MOSFETs 소자의 방사선 손상 복구)

  • Hyo-Jun Park;Tae-Hyun Kil;Ju-Won Yeon;Moon-Kwon Lee;Eui-Cheol Yun;Jun-Young Park
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.37 no.5
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    • pp.507-511
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    • 2024
  • Various process modifications have been used to minimize SiO2 gate oxide aging in metal-oxide-semiconductor field-effect transistors (MOSFETs). In particular, post-metallization annealing (PMA) with a deuterium ambient can effectively eliminate both bulk traps and interface traps in the gate oxide. However, even with the use of PMA, it remains difficult to prevent high levels of radiation-induced gate oxide damage such as total ionizing dose (TID) during long-term missions. In this context, additional low-temperature heat treatment (LTHT) is proposed to recover from radiation-induced damage. Positive traps in the damaged gate oxide can be neutralized using LTHT, thereby prolonging device reliability in harsh radioactive environments.

Transition of 12CaO·7Al2O3 electrical insulator to the permanent semiconductor using via thermo-chemical reduction treatment (열 화학적 환원 처리를 이용한 절연체 12CaO·7Al2O3의 전도체로의 전환)

  • Chung, Jun-Ho;Eun, Jong-Won;Oh, Dong-Keun;Kim, Kwang-Jin;Hong, Tae-Ui;Jeong, Seong-Min;Choe, Bong-Geun;Shim, Kwang-Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.20 no.4
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    • pp.178-184
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    • 2010
  • The $12CaO{\cdot}7Al_2O_3$(C12A7) powders were successfully synthesized using combustion method with microwave-assistant and C12A7:H were fabricated by post-annealed process in Ar/H atmosphere. X-ray diffraction patterns and TGDSC were used for investigating to the precursors of crystalline and reaction depending on temperature. C12A7:H that was treated post-annealed process were investigated TG-MS and Hall-measurement for confirming H ions doping and checking electrical resistivity of C12A7:H. H ion substituted to $O^{2-}$ ions in the C12A7 cages were confirmed at $289.5^{\circ}C$ by TG-MS and C12A7:H calcined at $1000^{\circ}C$ in Ar/H=8:2 atmosphere for 8~10 h has low electrical resistivity about $10^2{\Omega}{\cdot}cm$ at room temperature.

Sol-gel growth and structural, electrical, and optical properties of vanadium-based oxide thin films (바나듐 옥사이드 박막의 성장 및 그 구조적, 전기적, 광학적 특성)

  • Park, Young-Ran;Kim, Kwang-Joo
    • Journal of the Korean Vacuum Society
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    • v.15 no.5
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    • pp.534-540
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    • 2006
  • Thin films of $V_2O_3$, $VO_2$, and $V_2O_5$ were obtained from a single precursor solution through post-annealing processes under different annealing conditions. As annealed in air, the deposited films became $V_2O_5$ with orthorhombic crystal structure, while they were $V_2O_3$ and $VO_2$ with rhombohedral and monoclinic crystal structure as annealed in vacuums with base pressure of $1{\times}10^{-6}$ Torr and with 10 mTorr $O_2$ pressure, respectively. Electrical and optical measurements indicated that the $V_2O_5$ and $VO_2$ films are semiconducting, while the $V_2O_3$ films are metallic at room temperature. Chromium doping in $VO_2$ resulted in a decrease of the resistivity and changed the conduction type from n-type to p-type. 10% Cr-doped $VO_2$ films were found to have orthorhombic crystal structure, which is different from that of the undoped $VO_2$. Spectral features in the optical absorption spectra of all the films were interpreted as the transitions involving O 2p and V 3d bands. The crystal-field splittings between $t_{2g}$ and $e_g$ states of the V 3d bands are estimated to be about 1.5 and 1.0 eV for $V_2O_5$ and $VO_2$, respectively.

Improvement of Mechanical Properties of Mg alloys through Control of Grain Size and Texture (결정립크기와 집합조직제어를 통한 마그네슘 합금의 기계적 성질 개선)

  • Kim, W.J.;Lee, J.B.;Kim, W.Y.;Jeong, H.G.;Park, J.D.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2006.05a
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    • pp.57-58
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    • 2006
  • The effects of lowering ECAP temperature during ECAP process and Post-ECAP annealing on microstructure, texture and mechanical properties of the AZ31 alloys have been investigated in the present study. The as-extruded materials were ECAP processed to 2 passes at 553K prior to subsequent pressing up to 6 passes at 523K or 493K. When this method of lowering ECAP temperature during ECAP was used, the rods could be successfully deformed up to 6 passes without any surface cracking. Grain refinement during ECAP process at 553K might have helped the material to endure further straining at lower deformation temperatures probably by increasing the strain accommodation effect by grain boundary sliding, causing stress relaxation. Texture modification during ECAP has a great influence on the strength of Mg alloys because HCP metals have limited number of slip systems. As slip is most prone to take place on basal planes in Mg at room temperature, the rotation of high fraction of basal planes to the directions favorable for slip as in ECAP decreases the yield stress appreciably. The strength of AZ31 Mg alloys increases with decrease of grain size if the texture is constant though ECAP deformation history is different. A standard positive strength dependence on the grain size for Mg alloys with the similar texture (Fig. 1) supports that the softening of ECAPed Mg alloys (a negative slope) typically observed despite the significant grain refinement is due to the texture modification where the rotation of basal planes occurs towards the orientation for easier slip. It could be predicted that if the original fiber texture is restored after ECAP treatment yielding marked grain refinement, yield stress as high as 500 MPa will be obtained at the grain size of ${\sim}1{\mu}m$. Differential speed rolling (DSR) with a high speed ratio between the upper and lower rolls was applied to alter the microstructure and texture of the AZ31 sheets. Significant grain refinement took place during the rolling owing to introduction of large shear deformation. Grain size as small as $1.4{\mu}m$ could be obtained at 423K after DSR. There was a good correlation between the (0002) pole intensity and tensile elongation. This result indicates that tensile ductility improvement in the asymmetrically rolled AZ31 Mg alloys is closely related to the weakening of basal texture during DSR. Further basal texture weakening occurred during annealing after DSR. According to Hall-Petch relation shown in Fig. 1, the strength of the asymmetrically rolled AZ31 is lower than that of the symmetrically rolled one when compared at the same grain size. This result was attributed to weakening of fiber texture during DSR. The DSRed AZ31, however, shows higher strength than the ECAPed AZ31 where texture has been completely replaced by a new texture associated with high Schmid factors.

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A Rapid and Sensitive Detection of Aflatoxin-producing Fungus Using an Optimized Polymerase Chain Reaction (PCR)

  • Bintvihok, Anong;Treebonmuang, Supitchaya;Srisakwattana, Kitiya;Nuanchun, Wisut;Patthanachai, Koranis;Usawang, Sungworn
    • Toxicological Research
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    • v.32 no.1
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    • pp.81-87
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    • 2016
  • Aflatoxin B1 (AFB1) is produced by Aspergillus flavus growing in feedstuffs. Early detection of maize contamination by aflatoxigenic fungi is advantageous since aflatoxins exert adverse health effects. In this study, we report the development of an optimized conventional PCR for AFB1 detection and a rapid, sensitive and simple screening Real-time PCR (qPCR) with SYBR Green and two pairs of primers targeting the aflR genes which involved aflatoxin biosynthesis. AFB1 contaminated maize samples were divided into three groups by the toxin concentration. Genomic DNA was extracted from those samples. The target genes for A. flavus were tested by conventional PCR and the PCR products were analyzed by electrophoresis. A conventional PCR was carried out as nested PCR to verify the gene amplicon sizes. PCR-RFLP patterns, obtained with Hinc II and Pvu II enzyme analysis showed the differences to distinguish aflatoxin-producing fungi. However, they are not quantitative and need a separation of the products on gel and their visualization under UV light. On the other hand, qPCR facilitates the monitoring of the reaction as it progresses. It does not require post-PCR handling, which reduces the risk of cross-contamination and handling errors. It results in a much faster throughout. We found that the optimal primer annealing temperature was $65^{\circ}C$. The optimized template and primer concentration were $1.5{\mu}L\;(50ng/{\mu}L)$ and $3{\mu}L\;(10{\mu}M/{\mu}L)$ respectively. SYBR Green qPCR of four genes demonstrated amplification curves and melting peaks for tub1, afIM, afIR, and afID genes are at $88.0^{\circ}C$, $87.5^{\circ}C$, $83.5^{\circ}C$, and $89.5^{\circ}C$ respectively. Consequently, it was found that the four primers had elevated annealing temperatures, nevertheless it is desirable since it enhances the DNA binding specificity of the dye. New qPCR protocol could be employed for the determination of aflatoxin content in feedstuff samples.

A study on the fabrication of $Pb(Fe^{0.5},Nb^{0.5}O_3$ thin films by a Co-sputtering technique and their characteristics properties (동시 스퍼터링법에 의한$Pb(Fe^{0.5},Nb^{0.5}O_3$박막의 제조 및 특성 평가에 대한 연구)

  • 이상욱;신동석;최인훈
    • Journal of the Korean Vacuum Society
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    • v.7 no.1
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    • pp.17-23
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    • 1998
  • $Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$ thin films were prepared by rf magnetron co-sputtering method on $SiO_2/Si$, ITO/glass, and $Pt/Ti/SiO_2/Si$ substrates and post-annealed at the $N_2$ atmosphere by RTA(rapid thermal annerling). The degree of crystallinity of PFN films was identified on various substrates. Electrical properties of PFN films was characterized for $Pt/PFN/Pt/Ti/SiO_2/Si$ structure. The composition of PFN films was estimated by EPMA (electron probe micro analysis). PFN films would be crystallized better to perovskite phase on ITO/glass substrate than $SiO_2/Si$ substrate. This may be induced by the deformation of Pb deficient pyrochlore phase due to Pb diffusion into $SiO_2/Si$ substrate. PFN films on $Pt/Ti/SiO_2/Si$ substrate. PFN films with 5-10% Pb excess were crystallized to perovskite phase from $500^{\circ}C$ temperature. In summary, we show that Pb composition and annealing temperature were critically influenced on crystallinity to perovskite phase. When PFN film with 17% Pb excess was annealed at $600^{\circ}C$ at the $N_2$ atmosphere for 300kV/cm and 88. Its remnant polarization coercive field $2.0 MC/cm^2$ and 144kV/cm, respectively.

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A Study on Configuration Optimization for Rotorcraft Fuel Cells based on Neural Network (인공신경망을 이용한 연료셀 형상 최적화 연구)

  • Kim, Hyun-Gi;Kim, Sung-Chan;Lee, Jong-Won;Hwang, In-Hee
    • Journal of the Computational Structural Engineering Institute of Korea
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    • v.25 no.1
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    • pp.51-56
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    • 2012
  • Crashworthy fuel cells have been widely implemented to rotorcraft and rendered a great contribution for improving the survivability of crews and passengers. Since the embryonic stage of military rotorcraft history began, the US army has developed and practised a detailed military specification documenting the unique crashworthiness requirements for rotorcraft fuel cells to prevent most fatality due to post-crash fire. Foreign manufacturers have followed their long term experience to develop their fuel cells, and have reflected the results of crash impact tests on the trial-and-error based design and manufacturing procedures. Since the crash impact test itself takes a long-term preparation efforts together with costly fuel cell specimens, a series of numerical simulations of the crash impact test with digital mock-ups is necessary even at the early design stage to minimize the possibility of trial-and-error with full-scale fuel cells. In the present study a number of numerical simulations on fuel cell crash impact tests are performed with a crash simulation software, Autodyn. The resulting equivalent stresses are further analysed to evaluate a number of appropriate design parameters and the artificial neural network and simulated annealing method are simultaneously implemented to optimize the crashworthy performance of fuel cells.