• ETRI Journal
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• 제36권2호
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• pp.214-223
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• 2014

A fully-integrated penta-band reconfigurable power amplifier (PA) is developed for handset Tx applications. The output structure of the proposed PA is composed of the fixed output matching network, power and frequency reconfigurable networks, and post-PA distribution switches. In this work, a new reconfiguration technique is proposed for a specific band requiring power and frequency reconfiguration simultaneously. The design parameters for the proposed reconfiguration are newly derived and applied to the PA. To reduce the module size, the switches of reconfigurable output networks and post-PA switches are integrated into a single IC using a $0.18{\mu}m$ silicon-on-insulator CMOS process, and a compact size of $5mm{\times}5mm$ is thus achieved. The fabricated W-CDMA PA module shows adjacent channel leakage ratios better than -39 dBc up to the rated linear power and power-added efficiencies of higher than around 38% at the maximum linear output power over all the bands. Efficiency degradation is limited to 2.5% to 3% compared to the single-band reference PA.

• Journal of Korean Vacuum Science & Technology
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• 제6권3호
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• pp.126-132
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• 2002

The origin of image-sticking in metal-insulator-metal type thin-film diode liquid crystal displays(TFD-LCDs) is the asymmetric current-voltage(I-V) characteristic of TFD element. We developed that TFD-LCDs have reduced-image-sticking. Tantalum pentoxide(Ta$_2$O$\sub$5/) is a candidate for use in metal-insulator-metal(MIM) capacitors in switching devices for active-matrix liquid crystal displays(AM-LCDs). High quality Ta$_2$O$\sub$5/ thin films have been obtained from anodizing method. We fabricated a TFD element using Ta$_2$O$\sub$5/ films which had perfect current-voltage symmetry characteristics. We applied novel process technologies which were postannealed whole TFD element instead of conventional annealing to the fabrication. One-Time Post-Annealing(OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and upper metal are annealed at one time. Futhermore, in this paper, we discussed the effects of top-electrode metals and annealing conditions.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권2호
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• pp.95-100
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• 2006

The GaAs-on-insulator (GOI) wafer fabrication technique has been developed by using ion-cut process, based on hydrogen ion implantation and wafer direct bonding techniques. The hydrogen ion implantation condition for the ion-cut process in GaAs and the associated implantation mechanism have been investigated in this paper. Depth distribution of hydrogen atoms and the corresponding lattice disorder in (100) GaAs wafers produced by 40 keV hydrogen ion implantation were studied by SIMS and RBS/channeling analysis, respectively. In addition, the formation of platelets in the as-implanted GaAs and their microscopic evolution with annealing in the damaged layer was also studied by cross-sectional TEM analysis. The influence of the ion fluence, the implantation temperature and subsequent annealing on blistering and/or flaking was studied, and the optimum conditions for achieving blistering/splitting only after post-implantation annealing were determined. It was found that the new optimum implant temperature window for the GaAs ion-cut lie in $120{\sim}160^{\circ}C$, which is markedly lower than the previously reported window probably due to the inaccuracy in temperature measurement in most of the other implanters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.7-8
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• 2006

The effects of heat treatment on the electrical properties of SGOI were examined. We proposed the optimized heat treatments for improving the interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA(rapid thermal annealing) before gate oxidation and post-RTA after dopant activation, the driving current, the transconductance, and the leakage current were improved significantly.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.399-402
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• 2007

The effects of heat treatment on the electrical properties of strained-Si/SiGe-on-insulator (SGOI) devices were examined. We proposed the optimized heat treatment processes for improving the back interfacial electrical properties in SGOI-MOSFET. By applying the additional pre-RTA (rapid thermal annealing) before gate oxidation step and the post-RTA after source/drain dopant activation step, the electrical properties of strained-Si channel on $Si_{1-x}Ge_x$ layer were greatly improved, which resulting the improvement of the driving current, transconductance, and leakage current of SGOI-MOSFET.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2015년도 제46회 하계학술대회
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• pp.1589-1590
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• 2015

전기철도차량에 전기를 공급하는 가공 전차선로 시스템은 커티너리(catenary) 방식과 강체가선 방식으로 구분 할 수 있으며 강체가선 방식은 DC 급전구간에서 주로 사용하고 있는 T-bar 시스템과 AC 급전구간에서 주로 사용하는 R-bar 시스템으로 구분 할 수 있다. 최근 국내환경에 적합한 고속용 R-bar 시스템의 개발을 진행하고 있으며 여기에 필요한 브래킷 지지 및 절연용 장간애자와 동상구분을 위한 절연구분장치 개발을 진행하고 있다. 따라서 국내에 수입하여 적용하고 있는 저속, 고속 R-bar 시스템용 장간애자 및 절연구분장치의 성능기준을 확인하고 개발에 필요한 성능기준을 검토 적용하여 고속 R-bar 시스템용 장간애자 및 절연구분장치 개발을 진행할 예정이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 춘계학술대회 논문집 유기절연재료 전자세라믹 방전플라즈마 연구회
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• pp.69-71
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• 2001

FRP has been used very much as high strength core materials for insulators because of its high strength and good insulation properties. In this study cantilever, tension and torsion stress were simulation along to the unidirection glass fiber. In addition, FRP was made by pultrusion method. This paper proposed the procedure of the finite element model updating and pretest using the commerical finite element code MSC.Nastran. To ehance the efficiency of experimental modal analysis. we proposed the process which is the selection of the locations and the number of measurement points for pre-test.

• 전기학회논문지P
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• 제66권2호
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• pp.94-97
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• 2017

A method of improving the anti-fouling characteristics of porcelain insulators was proposed in this study. Functional coating was performed as a method of reducing the surface contamination of the porcelain insulators. The functional coating was applied on a ceramic substrate, which has the same material as the porcelain insulators. After coating the ceramic substrate 2, 3, 4, and 5 times alternately in the horizontal and vertical directions, the surface characteristics according to the thickness of the coating film were analyzed. The optimal process was selected to coat the surfaces of the post insulators and long rod insulators, which are the representative porcelain insulators. After coating, heat treatment was performed for 1 hour at $200^{\circ}C$ in a furnace to secure the durability of the coating film. Compared to the uncoated insulators, the insulators with the functional coating showed significantly improved anti-fouling characteristics as well as excellent adhesion to the coated insulator surface.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.2081_2082
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• 2009

국내 가공배전 선로는 절연전선을 사용하고 있으며, 절연을 위해 세라믹 재질과 폴리머 재질의 지지애가가 사용되고 있다. 지지 애자 위의 전선은 진동에 따라 종방향 및 횡방향의 기계적 마찰력을 받고 있으며, 전기적으로 누설전류 및 서지의 영향을 받아 절연피복이 손상된다. 본 연구에서는 지지애자를 통해 흐르는 누설전류에 의해 전선이 손상되는 메커니즘을 규명하여 고장을 예방하고자 하였다. 절연전선은 손상된 부위에서 전류가 집중되어 내부 도체가 용융 단선되었다. 전선단선에 영향을 주는 열화 인자로서 지지애자의 표면 열화상태, 절연전선 피복 손상, 바인드선의 종류 등이 복합적으로 작용하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.495-498
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• 2001

The distribution line through which electricity is supplied from substation to customer generally varies by underground line and overhead line. In contrast that the underground line is shielded, the overhead lines do not have the shield layer. To overcome this weak point of the overhead lines, the aerial bundled cable(ABC) connection systems have been developed. The basic concept of the ABC connection system is the application of the underground cable system containing complete shield layer to the overhead cable system. The ABC system is the innovative technologies which enable the prevention of electric shocks, reduction of the maintenance charge and damage of the cable. This paper give a full detail of vertical connection system applied within a country.