• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 추계학술대회
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• pp.1353-1358
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• 2004

An experimental study of pool boiling behavior on micro-porous enhanced square heater surfaces immersed in PF5060 is performed. The effects of heater orientation, Subcooling and substrate distance on the pool boiling heat transfer performance for the double heaters were investigated under increasing heat-flux conditions. The boiling performance of micro-porous coated surface was better than that of plain surface. The double heaters with upper substrate of 0.2cm substrate interval have lower boiling performances compared with the results for the double heaters with that of 0.5cm and 1.0cm substrate interval and without the substrate. In comparison to upper heater and below heater with orientation, the upper heater has lower superheat temperature than the below heater due to the bubble sweeping.

• 한국재료학회지
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• 제21권5호
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• pp.268-272
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• 2011

Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of $Me_2Ga(N_3)NH_2C(CH_3)_3$ with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750$^{\circ}C$. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.

• 한국세라믹학회지
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• 제45권2호
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• pp.132-137
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• 2008

The main purpose of this study is enhancing the filtering efficiency, performance and durability of filter by growing SiC whiskers on cordierite honeycomb substrate. The experiment was performed by Chemical Vapor Infiltration (CVI) in order to control pore morphology of substrate. Increasing the mechanical strength of porous substrate is one of important issues. The formation of "networking structure" in the pore of porous substrate increased mechanical strength. The high pressure gas injection to the specimen showed that a little of whiskers were separated from substrate but additional film coating enhanced the stability of whisker at high pressure gas injection. Particle trap test was performed. More nano-particle was trapped by whisker growth at the pore of substrate. Therefore it is expected that the porous cordierite which deposited the SiC whisker will be the promising material for the application as filter trapping the nano-particles.

• 한국세라믹학회지
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• 제52권6호
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• pp.417-422
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• 2015

In this study, we investigate the effect of porous $Al_2O_3$ substrate on the strengths of asymmetric structures after we prepare such a structure consisting of a dense $Li_2ZrO_3$ top layer and porous $Al_2O_3$ substrate layer. The porosity and elastic modulus of the substrate layer are controlled by sintering temperature, which has three values of 1150, 1250 and $1350^{\circ}C$. The porosity is controlled in the range of ~ 30-50 vol%, elastic modulus is ~80-120 GPa and elastic mismatch $E_s/E_c$ is ~ 0.6-1.0. Indentation stress-strain curves are obtained and analyzed to evaluate the yield stress of the asymmetric structure by concentrated local loading of WC balls. Conventional flexural strengths are also obtained to evaluate the strength of the asymmetric structure. The results indicate that the local yield strength of the asymmetric structure has mid-values between the top and the substrate layer; however, the flexural strength of the asymmetric structure are mainly influenced by elastic modulus and strength of the substrate.

• 한국세라믹학회지
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• 제45권12호
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• pp.796-801
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• 2008

$LaGaO_3$ thin film was prepared on Ni-Fe metal porous substrate by Pulsed Laser Deposition method. By the thermal reduction, the dense $NiO-{Fe_3}{O_4}$ substrate is changed to a porous Ni-Fe metal substrate. The volumetric shrinkage and porosity of the substrate are controlled by the reduction temperature. It was found that a thermal expansion property of the Ni-Fe porous metal substrate is almost the same with that of $LaGaO_3$ based oxide. $LaGaO_3$ based electrolyte films are prepared by the pulsed laser deposition (PLD) method. The film composition is sensitively affected by the deposition temperature. The obtained film is amorphous state after deposition. After post annealing at 1073K in air, the single phase of $LaGaO_3$ perovskite was obtained. Since the thermal expansion coefficient of the film is almost the same with that of LSGM film, the obtained metal support LSGM film cell shows the high tolerance against a thermal shock and after 6 min startup from room temperature, the cell shows the almost theoretical open circuit potential.

• 한국세라믹학회지
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• 제41권7호
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• pp.503-507
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• 2004

The importance of porous ceramics has been increasingly recognized and adequate strength of porous ceramics is now required for structural applications. Porosities of porous ceramics act as flaws in inner volume and outer surface which result in severe strength degradation. The effect of pore structure, however, on strength and reliability of porous ceramics has not been clearly understood. We investigate the relationship between pore structure and mechanical properties using a sphere indentation on bilayer structure, porous ceramic top layer with soft polymer substrate. Porous alumina and silica were prepared to characterize the isolated pore structure and interconnected pore structure, respectively. The porous ceramic with 1mm thickness were bonded to soft polycarbonate substrate and then fracture strengths were estimated from critical loads for radial cracking of porous ceramics during sphere indentation from top surface. This simple and reproducible technique provides Weibull modulus of strength of porous ceramics with different pore structure. It shows that the porous ceramics with isolated pore structure have higher strength and higher Weibull modulus as well, than those with interconnected pore structure even with the same porosity.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2013년도 춘계학술대회 논문집
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• pp.1013-1014
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• 2013

• Korean Chemical Engineering Research
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• 제52권3호
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• pp.340-346
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• 2014

Continuous and dense ZIF-7 membranes were successfully synthesized on ${\alpha}-Al_2O_3$ porous substrate via two-step crystallization technique. ZIF-7 seeding layer was first deposited on porous ${\alpha}-Al_2O_3$ substrate by in-situ low temperature crystallization, and then ZIF-7 membrane layer can be grown through the secondary high-temperature crystallization. Two synthesis solutions with different concentration were used to prepare ZIF-7 seeding layer and membrane layer on porous ${\alpha}-Al_2O_3$ substrate, respectively. As a result, a continuous and defect-free ZIF-7 membrane layer can be prepared on porous ${\alpha}-Al_2O_3$ substrate, as confirmed by scanning electron microscope. XRD characterization shows that the resulting membrane layer is composed of pure ZIF-7 phase without any impurity. A single gas permeation test of $H_2$, $O_2$, $CH_4$ or $CO_2$ was conducted based on our prepared ZIF-7 membrane. The ZIF-7 membrane exhibited excellent H2 molecular sieving properties due to its suitable pore aperture and defect-free membrane layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• Current Photovoltaic Research
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• 제1권2호
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• pp.90-96
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• 2013

We report here flexible dye-sensitized solar cells (DSSC) based on Ti-mesh electrodes that show good mechanical flexibility and electrical conductivity. $TiO_2$ nanotube arrays prepared by electrochemical anodizing Ti-mesh substrate were used as photoanode. A Pt-coated Ti-mesh substrate was used as counter electrode. The photoanodes were modified by coating a $TiO_2$ porous layer onto the $TiO_2$ nanotubes in order to increase the specific surface area. To increase the long term stability of the DSSCs, a gel type electrolyte was used instead of a conventional liquid type electrolyte. The DSSC based on $33.2{\mu}m$ long porous $TiO_2$ nanotubes exhibited a better energy conversion efficiency of ~2.33%, which was higher than that of the DSSCs based on non-porous $TiO_2$ nanotubes.