• Title/Summary/Keyword: Porous layer

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Experimental Study on Saltation of Sand Particles Located behind Porous Wind Fences (바람에 의한 야적모래입자의 비산에 관한 실험적 연구)

  • Park, Ki-Chul;Lee, Sang-Joon
    • Proceedings of the KSME Conference
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    • 2000.04b
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    • pp.740-745
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    • 2000
  • Effects of porous fences on the wind erosion of sand particles from a triangular pile were investigated experimentally. The porous fence and sand pile were installed in a simulated atmospheric boundary layer. The mean velocity and turbulent intensity profiles measured at the sand pile location were well fitted to the atmospheric boundary layer over the open terrain. Particle motion was visualized to see the motion of windblown sand particles qualitatively. In addition, the threshold velocity were measured using a light sensitive video camera with varying the fence porosity ${\varepsilon}$. As a result, various types of particle motion were observed according to the fence porosity. The porous wind fence having porosity ${\varepsilon}=30%$ was revealed to have the maximum threshold velocity, indicating good shelter effect for abating windblown dust particles.

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Improvement of Sensitivity in Porous Silicon Alcohol Gas Sensors by UV Light (자외선조사에 의한 다공질 실리콘 알코올 센서의 감도 개선)

  • Kim, Seong-Jin;Choe, Bok-Gil
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.9
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    • pp.676-680
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    • 1999
  • To do breath alcohol measurement, a sensor is necessary that it can detect low alcohol gas concentration of 0.01% at least. In this work, a capacitance-type alcohol gas sensor using porous silicon layer is developed to measure low alcohol gas concentration. The sensor using porous silicon layer has some sensitivity at room temperature by very large effective surface area, but there is still much room for improvement. In this experiment, we measured the capacitance of the sensor under 254 nm UV light on the porous silicon layer, in which alcohol solution was kept in a flask at 25, 35, and $45^{\circ}C$ by a heater. As the result, the improvement of sensitivity by illuminating UV light was observed. The increasing rate of the capacitance was shown to be double more than those measured under UV-off state. It is supposed that UV light activates response of the oriental and interfacial polarizations which have slow relaxation time for AC field.

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The Natural Convection in Horizontal Porous Layer with Vertical or Horizontal Throughflow (수직$\cdot$수평 관통류를 갖는 수평 다공층에서 자연대류 연구)

  • Seo S. J.;Park C. K.
    • Journal of computational fluids engineering
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    • v.3 no.1
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    • pp.73-81
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    • 1998
  • The effect of vertical or horizontal throughflow on natural convection in horizontal porous layer was investigated. The computations were performed by employing Darcy-Brinkman-Forchheimer equation to consider the effect of inertia and viscous effect. The patterns of streamlines and isotherms are observed by changing the strength of throughflow. The vertical throughflow stabilizes the natural convection in porous layer. It also disturbs the developing vertical and horizontal velocity component of natural convection cell and increases the critical modified Rayleigh number. The horizontal throughflow influences the stabilization of natural convection in porous layer much more than the vertical throughflow. And it changes a stable convection into a oscillatory convection.

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Localized formation of porous silicon usin gdoping concentration selectivity (도핑농도의 선택도를 이용한 국부적 다공질 실리콘의 형성)

  • 이주혁;김성진;이성필;이철진;최복길;박천만;심관수
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.465-468
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    • 1998
  • For porous silicon layer to be used as active layer in various devices, it is necessary to be formed locally along with a designed pattern on the wafer. However, there is still no suitable masking layer to withstand against the high concentration of HF for a time of some minutes up to some hours during the anodic process effectively. In this work, we investigated the property of selectivity between p$^{+}$ and n layers to form localized porous silicon even without a mask by the difference of the anodic I-V characteristics on the doping level and doping type. The width of the pattern made in the sample was 2mm, and the formed porous silicon layer was observed by SEM to see the morphology on the cross section below the surface. As the results, it was found that the selectivity was reasonable for the pattern size over 100.mu.m.m.

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Effect of $CO_2$ Content on the Growth and Corrosion Characteristics of the Compound Layers in Gaseous Nitrocarburized Carbon Steels (가스 질화침탄처리한 탄소강의 화합물층 성장 및 부식특성에 미치는 $CO_2$함량의 영향)

  • Kim, Y.H.;Kim, S.D.;Yoon, H.J.
    • Journal of the Korean Society for Heat Treatment
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    • v.15 no.5
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    • pp.219-227
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    • 2002
  • This study has been performed to investigate the effect of $CO_2$ content on the growth characteristics of the compound layer, porous layer and corrosion characteristics of carbon steels after gaseous nitrocarburizing in $70%-NH_3-CO_2-N_2$ at $580^{\circ}C$ for 2.5 hrs. The results obtained from the experiment were the thickness of the compound and porous layers increased with increasing $CO_2$ contents. At the same fixed gas composition the thickness of the compound and porous layer increased with increasing carbon content of the specimens. X-ray diffraction analysis showed that compound layer was mainly consisted of ${\varepsilon}-Fe_{2-3}(N,C)$ and ${\gamma}^{\prime}-Fe_4N$ as the increased with $CO_2$ contents in atmosphere, compound layer was chiefly consisted of ${\varepsilon}-Fe_{2-3}(N,C)$ phase. With increasing $CO_2$ content and total flow rate in gaseous nitrocarburizing, the amount of ${\varepsilon}-Fe_{2-3}(N,C)$ phase in the compound layer was increased. The current density of passivity decreased with increasing $CO_2$ content due to the development of porous layer at the out most surface of ${\varepsilon}-Fe_{2-3}(N,C)$.

Investigation of the surface structure improvement to reduce the optical losses of crystalline silicon solar cells (결정질 실리콘 태양전지의 광학적 손실 감소를 위한 표면구조 개선에 관한 연구)

  • Lee Eun-Joo;Lee Soo-Hong
    • New & Renewable Energy
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    • v.2 no.2 s.6
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    • pp.4-8
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    • 2006
  • Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient Reff lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

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Porous Si Layer by Electrochemical Etching for Si Solar Cell

  • Lee, Soo-Hong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.7
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    • pp.616-621
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    • 2009
  • Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

Investigation of the crystalline silicon solar cells with porous silicon layer (다공성 실리콘 막을 적용한 결정질 실리콘 태양전지 특성 연구)

  • Lee, Eun-Joo;Lee, Il-Hyung;Lee, Soo-Hong
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.295-298
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    • 2007
  • Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating(ARC) and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si ARC layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layers were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The structure of porous Si layers was investigated with SEM. The formation of a nanoporous Si layer about 100nm thick on the textured silicon wafer result in a reflectance lower than 5% in the wavelength region from 500 to 900nm. Such a surface modification allows improving the Si solar cell characteristics. An efficiency of 13.4% is achieved on a monocrystalline silicon solar cell using the electrochemical technique.

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Investigation of the surface structure improvement to reduce the optical losses of crystalline silicon solar cells (결정질 실리콘 태양전지의 광학적 손실 감소를 위한 표면구조 개선에 관한 연구)

  • Lee, Eun-Joo;Lee, Soo-Hong
    • 한국신재생에너지학회:학술대회논문집
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    • 2006.06a
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    • pp.183-186
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    • 2006
  • Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient $R_{eff}$ lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

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Specific Resistance (K2´) of Dust Layer Deposited on Porous Media (다공성 필터에서의 여과 분진층 비저항 연구)

  • 이선희;이경미;조영민
    • Journal of Korean Society for Atmospheric Environment
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    • v.20 no.3
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    • pp.371-380
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    • 2004
  • In the dust separation by using porous filter media, the structure of dust layer deposited on the filter surface of filter medium directly affects the effective filtration. The present study has investigated the specific resistance (K$_2$') of the dust layer and its porosity ($\varepsilon$$_{c}$) for three different filters; FA composite filter, metal fiber filter and stainless filter. The specific resistance (K$_2$') increased and at the same time the cake porosity ($\varepsilon$$_{c}$) decreased with the increase of filtration velocity, possibly due to the compressible effect of dust layer. However, under the low dust concentration, subsequent dust particles would block the open channels through the layer resulting in high specific resistance of the layer. The FA composite filter among three filters was shown to be the most effective filter for dust cake filtration at low filtration velocities less than 0.1 m/s for an approximate dust concentration of 5 g/㎥.