• Journal of the Korean Chemical Society
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• v.48 no.1
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• pp.39-45
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• 2004

Acid amplifying copolymers are synthesized by the copolymerization of tert-butyl methacrylate(tBMA) with acid-sensitive functional group and 4-hydroxy-4'p-styrenesufonyloxyisopropylidene dicyclohexane(HSI) or 4-p-styrenesulfonyloxy-4'-tosyloxyisopropylidenedicyclohexane(STI) with acid-amplifying group as novel polymeric acid amplifying photoresists. Poly(HSI-co-tBMA) film and Poly(STI-co-tBMA) film as acid amplifying photoresists show reasonable thermal stability in the absence of an acid species. Poly(STI-co-tBMA) film exhibits 2X higher photosensitivity, whereas Poly(HSI-co-tBMA) film show 2X lower photosensitivity compared with ptBMA homopolymer. The attachment of acid-amplifying units to polymer backbones could provide a novel way to enhance the photosensitivity of acid-sensitive polymers depending on the structure of acid-amplifying units.

• Journal of the Korean Graphic Arts Communication Society
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• v.20 no.2
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• pp.131-140
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• 2002

Chemically amplified deep UV(CA-DUV) resists are typically based on a combination of an acid labile polymer and a photoacid generator(PAG) but acid amplification type photoresist is formulated by addition of the acid amplifiers to chemically amplified resist system(CAPs). We developed acid amplifiers base on cyclohexanediol such as 1-methacryloyloxy-4-tosyloxy cyclohexane(MTC) and poly(MTC$_{10}$-co-tBMA$_{90}$)(P-1) to enhance photosensitivity. P-1 is a copolymer of tert-butyl methacrylate and MTC as a positive working photoresist based on polymeric acid amplifier in order to enhance photosensitivity and simplify the process of fomulating a photoresist. P-1 exhibited 2X higher photosensitivity compared with PtBMA. The acid amplifiers showed reasonable thermal stability for resist processing temperature and higher photosensitivity compared with chemically amplified resist.