• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.9
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• pp.682-685
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• 2013

We have fabricated blue phosphorescent organic light-emitting devices (OLEDs) on a plastic substrate. The solution coated poly (9-vinylcarbazole) (PVK) host doped with Bis (3,5-difluoro-2-(2-pyridyl)phenyl_(2-carboxypyridyl)irdium(III) (FIrPic) guest molecules was used as an hole transporting emission layer. The device structure was ITO/PVK:FIrpic (50 nm, xwt%)/TAZ 50 nm)/LiF (0.5 nm)/Al (100 nm). The concentration of FIrpic molecule was varied from 1 wt% to 10 wt%. The OLED on plastic substrate exhibited maximum current efficiency of 18 cd/A with 5 wt% FIrpic molecules were doped into the PVK layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.311-312
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• 2007

In this study, composite $BaSrTiO_3$ has been studied for high frequency device applications. Composite $Ba_{0.5}Sr_{0.5}TiO_3$ has high dielectric permittivity and low loss tangent at the relative frequency range from MHz to GHz. 10,30 and 50 wt% of epoxy doped $Ba_{0.5}Sr_{0.5}TiO_3$ powders were prepared with bisphenol A and F polymer employing ball milling process. Epoxy/($BaSrTiO_3$) composites thick films were screen printed on the Cu plated PCB substrates through screen printing methods. The specimens were designed for the embedded capacitor applications. Temperature dependent dielectric permittivity of Epoxy doped $BaSrTiO_3$ ceramics was measured.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.7
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• pp.539-544
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• 2010

We have synthesized new blue electroluminescent polyalkylfluorene-based copolymers [poly(F-co-Py)x:y, where x:y = 99:1 or 95:5 mole ratios] containing the hole-injecting pyrazole derivative [3,3'-(4,6-bis(octyloxy)-1,3-phenylene)bis(1,5-diphenyl-4,5-dihydro-1H-pyrazole] through Ni(0) mediated polymerization, and their electroluminescent properties were investigated. Electroluminescent (EL) devices were fabricated with ITO / PEDOT:PSS (110 nm) / copolymers or PF homopolymer (80 nm) / Ca (50 nm) / Al (200 nm) configuration. Each EL device constructed from the copolymer exhibited significantly enhanced brightness and efficiency compared with a device constructed from the PF homopolymer. The EL device constructed with poly(F-co-Py)99:1 exhibited the highest luminous efficiency and brightness (0.95 cd/A and $2,907\;cd/m^2$, respectively). The achieved luminous efficiency was an excellent result, providing almost a 4-fold improvement on the efficiency obtainable with the a PF homopolymer device. This enhanced efficiency of the copolymer devices results from their improved hole injection and more efficient charge carrier balance, which arises from the HOMO level (~5.83 eV) of the poly(F-co-Py)99:1 copolymer, which is higher than that of the PF homopolyme (~5.90 eV).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.111-118
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• 2002

A new lithium niobate optical modulator with a polymer buffer layer on Ni in-diffused optical waveguide is proposed for the fist time, successfully fabricated and examined at a wavelength of 1.3 mm. By determining the diffusion parameters of Ni in-diffused waveguide to achieve more desirable mode size which is well matched to the mode in the fiber, the detailed results on the achievement of high optical throughput are reported. In addition, the usefulness of polymer buffer layer which can be applicable to a buffer layer in Ni in-diffused waveguide devices is demonstrated. Several sets of channel waveguides fabricated on Z-cut lithium niobate by Ni in-diffusion were obtained and on which coplanar traveling-wave type electrodes with a polymer-employed buffer layer were developed by a conventional fabrication method for characterizing of electro-optical performances of the proposed device. The experimental results show that the measured half-wave voltage is of ~10 V and the total measured fiber-to-fiber insertion loss is of ~6.4 dB for a 40 mm long at a wavelength of =1.3 mm, respectively. From the experimental results, it is confirmed that the polymer-employed buffer layer in LiNbO3 optical modulator can be a substitute material instead of silicon oxide layer which is usually processed at a high temperature of over $300^{\circ}C$. Moreover, the fabrication tolerances by using polymer materials in LiNbO3 optical modulators are much less strict in comparison to the case of dielectric buffer layer.

• Transactions on Electrical and Electronic Materials
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• v.16 no.5
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• pp.290-292
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• 2015

We have reported about bipolar resistive switching effect on Poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]:Graphene oxide composite films, which are sandwiched between aluminum and indium tin oxide electrodes. In this case, I-V sweep curve showed a hysteretic behavior, which varied according to the polarity of the applied voltage bias. The device exhibited excellent switching characteristics, with the ON/OFF ratio being approximately two orders in magnitude. The device had good endurance (10⁵ cycles without degradation) and long retention time (5 × 10³ s) at room temperature. The bistable switching behavior varied according to the trapping and de-trapping of charges on GO sites; the carrier transport was described using the space-charge-limited current (SCLC) model.

• Electrical & Electronic Materials
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• v.10 no.3
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• pp.295-301
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• 1997

다양하고 방대한 양의 정보를 효과적으로 처리, 분배하는 멀티미디어 정보통신 시스템이 광신호에 의한 처리를 통해 구현되어갈 전망이다. 이를 위해 빛을 발생시키는 발광소자, 빛을 검출하는 소광소자, 광신호를 처리하는 광신호 처리소자 그리고 광신호를 전달해주는 광섬유 및 화상정보의 표시를 위한 표시소자 등이 중요한 요소기술이다. 이같은 소자의 제작에 있어 기존 물질로는 요구에 대한 대응이 어려워 보다 우수한 성능의 소재개발이 요구된다. 이에 대한 대체물질로 최근 유기물 또는 고분자가 각광을 받고 있으며, 이를 사용한 소자개발이 활발히 진행되고 있다. 이제까지 무기물로 달성하기 힘들었던 많은 기술들이 유기물로 쉽게 구현이 가능하게 되면 고성능의 소재 및 소자기술은 다가오느 정보화 시대를 더축 풍요롭게 하는데 크게 기여할 것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.146-149
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• 2004

We have studied a liquid crystal (LC) mode (named locked super homeotropic (LSH)) in which the LCs aligned homeotropically are locked by surrounding walls such as cubic, hexagonal and cylinder. In the device, the vertically aligned LCs tilt down symmetrically around the center of the cell when a voltage is applied and thus it exhibits wide viewing angle. The structure of this LSH mode is suitable for large-sized display panels. since the LCs are locked in micro domains the LCs do not flow to the bottom of the panel by gravity. This mode is applicable to achieve high performance TFT-LCD TV because of high performance characteristics such as high contrast, high brightness, wide-viewing angle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1009-1013
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• 2009

In this study, we have been synthesized the dielectric layer using pure organic and organic-inorganic hybrid precursor on flexible substrate for improving of the organic thin film transistors (OTFTs) and, design and fabrication of organic thin-film transistors (OTFTs) using small-molecule organic semiconductors with pentacene as the active layer with record device performance. In this work OTFT test structures fabricated on polymerized substrates were utilized to provide a convenient substrate, gate contact, and gate insulator for the processing and characterization of organic materials and their transistors. By an adhesion development between gate metal and PI substrate, a PI film was treated using $O_2$ and $N_2$ gas. The best peel strength of PI film is 109.07 gf/mm. Also, we have studied the electric characteristics of pentacene field-effect transistors with the polymer gate-dielectrics such as cyclohexane and hybrid (cyclohexane+TEOS). The transistors with cyclohexane gate-dielectric has higher field-effect mobility, $\mu_{FET}=0.84\;cm^2/v_s$, and smaller threshold voltage, $V_T=-6.8\;V$, compared with the transistor with hybrid gate-dielectric.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.465-465
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• 2008

Conjugated polymers have attracted much scientific and technological research interest during the past few decades because of their potential use such as polymer light-emitting diodes (PLEDs).1,2 Particularly, lots of phenylene-based polymers such as polyfluorene and its derivatives have been synthesized because of their high photoluminescence quantum efficiencies and thermal stabilities. However, troublesome long wavelength emission in polymer film of polyfluorenes on heating during device formation or operation has been the crucial problem for practical applications. The source of the long wavelength emission was initially believed to be solely due to excimer emission as a result of polymer aggregation. It has also recently been correlated with emissions from ketonic defects in the fluorene units. Many efforts have been made to reduce the tendency to red-shifted emission. Here, we report for the first time the design and synthesis of novel 9,9-spiro bifluornene-based polymers containing heteroatoms such as N, S in its molecular skeleton. Especially, the 9,9-spiro bifluornene-based polymers containing N atom showed stable blue electroluminescence, which did not show spectral change upon thermal annealing.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.275-277
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• 1999

A application possibility of photoresist flexible film for optical waveguide is proposed and described. The optical waveguide dimensions that is consists of Mach-zehnder interferometric and single channel waveguide based on the single-mode conditions in LiNbO$_3$ device was utilized and fabricated by wet etching technique. This Polymer material for core layer is SU-8/5O(Microchem.) and its refractive index from prism couping method was measured about 1.59 thickness about 10${\mu}{\textrm}{m}$ at wavelength 0.6328${\mu}{\textrm}{m}$. From the results, this work can show the possibility of fabricating a flexible optical waveguide in the field of integrated optics.