• 한국세라믹학회지
• /
• 제43권1호
• /
• pp.38-41
• /
• 2006

Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.

• Korea-Australia Rheology Journal
• /
• 제12권1호
• /
• pp.77-81
• /
• 2000

Rheological behavior of thermoset/thermoplastic blends of epoxy/polyethersulphone (PES) was monitored during curing of the epoxy resin. During the isothermal curing of the mixture, a fluctuation in viscosity just before the abrupt viscosity increase was observed. This fluctuation is found to be due to the phase separation of PES from the matrix epoxy resin during the curing. The experimentally observed viscosity fluctuation is simulated with a simple two phase suspension model in terms of the increase in domain size. The viscosity profiles obtained experimentally at different isothermal curing temperatures are in good agreement with the predictions from the simple model taking into account the viscosity change due to the growth of PES domain and the network formation of the epoxy matrix.

• ETRI Journal
• /
• 제27권4호
• /
• pp.405-410
• /
• 2005

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of $2.9{\times}10^{-4}{\Omega}cm$ and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 $cd/m^2$ were 2500 $cd/m^{2}$ and 2 $mA/m^{2}$, respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

• Korean Membrane Journal
• /
• 제2권1호
• /
• pp.60-63
• /
• 2000

The effect of Candida rugosa and steapsin lipase cleaning was investigated for ultrafiltration polyethersulphone membrane (30,000 dalton MWCO) fouled with the semi-synthetic type cutting oil. The experimental by the water circulator. The enzyme cleaning effect was measured with respect to temperature, cleaning time and enzyme concentration. The optimum cleaning condition for the system was 25$^{\circ}C$ and 2 hour cleaning with 1,000 unites/mL steapsin solution. The pure water flux improvement by the steapsin solution cleaning was about 17% at the optimum cleaning condition.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
• /
• pp.214-215
• /
• 2008

Zinc-oxide(ZnO) films were deposited on PC(polycarboanate) and PES(polyethersulphone) substrates by using RF(radio-frequency)sputter with various rf sputtering Power at a room temperature. The effects of rf sputtering Power on the structural and optical properties of ZnO films were investigated by using atomic force microscopy, X-ray diffraction, and UV spectrophotometer. The most excellent structural and properties of a ZnO film are obtained in the condition of an rf-power of 150 W. This film shows larger Grain size and lower surface roughness and a higher optical transmittance of over 80 % in the visible range than other films deposited in the different conditions of rf- power. Regardless of substrate types, The presence of a strong diffraction peak indicates that films have a (0 0 2) preferred orientation associated with the hexagonal phase.

• Membrane and Water Treatment
• /
• 제5권3호
• /
• pp.207-219
• /
• 2014

Fouling is one of the critical factors associated with the application of membrane technology in treating palm oil mill effluent (POME), due to the presence of high concentration of solid organic matter, oil, and grease. In order to overcome this, chemical cleaning is needed to enhance the effectiveness of membranes for filtration. The potential use of sodium hydroxide (NaOH), sodium chloride (NaCl), hydrochloric acid (HCl), ethylenediaminetetraacetic acid (EDTA), and ultrapure water (UPW) as cleaning agents have been investigated in this study. It was found that sodium hydroxide is the most powerful cleaning agent, the optimum conditions that apply are as follows: 3% for the concentration of NaOH, $45^{\circ}C$ for temperature solution, 5 bar operating pressure, and solution pH 11.64. Overall, flux recovery reached 99.5%. SEM images demonstrated that the membrane surface after cleaning demonstrated similar performance to fresh membranes. This is indicative of the fact that NaOH solution is capable of removing almost all of the foulants from PES membranes.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
• /
• pp.17-17
• /
• 2010

The amorphous $Bi_5Nb_3O_{15}$ film grown at room temperature under an oxygen-plasma sputtering ambient (BNRT-$O_2$ film) has a hydrophobic surface with a surface energy of $35.6\;mJm^{-2}$, which is close to that of the orthorhombic pentacene ($38\;mJm^{-2}$, resulting in the formation of a good pentacene layer without the introduction of an additional polymer layer. This film was very flexible, maintaining a high capacitance of $145\;nFcm^{-2}$ during and after 10s bending cycles with a small curvature radius of 7.5 mm. This film was optically transparent. Furthermore, the flexible, pentacene-based, organic thin-film transistors (OTFTs) fabricated on the polyethersulphone substrate at room temperature using a BNRT-$O_2$ film as a gate insulator exhibited a promising device performance with a high field effect mobility of $0.5\;cm^2V^{-1}s^{-1}$, an on/off current modulation of $10^5$ and a small subthreshold slope of $0.2\;Vdecade^{-1}$ under a low operating voltage of -5 V. This device also maintained a high carrier mobility of $0.45\;cm^2V^{-1}s^{-1}$ during the bending with a small curvature radius of 9 mm. Therefore, the BNRT-$O_2$ film is considered a promising material for the gate insulator of the flexible, pentacene-based OTFT.