• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.75.2-75.2
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• 2010

We studied the fabrication of polycrystalline silicon (pc-Si) films as seed layers for application of pc-Si thin film solar cells, in which amorphous silicon (a-Si) films in a structure of glass/Al/$Al_2O_3$/a-Si are crystallized by the aluminum-induced layer exchange (ALILE) process. The properties of pc-Si films formed by the ALILE process are strongly determined by the oxide layer as well as the various process parameters like annealing temperature, time, etc. In this study, the effects of the oxide film thickness on the crystallization of a-Si in the ALILE process, where the thickness of $Al_2O_3$ layer was varied from 4 to 50 nm. For preparation of the experimental film structure, aluminum (~300 nm thickness) and a-Si (~300 nm thickness) layers were deposited using DC sputtering and PECVD method, respectively, and $Al_2O_3$ layer with the various thicknesses by RF sputtering. The crystallization of a-Si was then carried out by the thermal annealing process using a furnace with the in-situ microscope. The characteristics of the produced pc-Si films were analyzed by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer, and X-ray diffractometer (XRD). As results, the crystallinity was exponentially decayed with the increase of $Al_2O_3$ thickness and the grain size showed the similar tendency. The maximum pc-Si grain size fabricated by ALILE process was about $45{\mu}m$ at the $Al_2O_3$ layer thickness of 4 nm. The preferential crystal orientation was <111> and more dominant with the thinner $Al_2O_3$ layer. In summary, we obtained a pc-Si film not only with ${\sim}45{\mu}m$ grain size but also with the crystallinity of about 75% at 4 nm $Al_2O_3$ layer thickness by ALILE process with the structure of a glass/Al/$Al_2O_3$/a-Si.

• 한국세라믹학회지
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• 제34권2호
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• pp.181-187
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• 1997

다결정 BaTiO3 박막의 높은 유전상수와 비정질 BaTiO3 박막의 우수한 절연특성을 함께 지닌 적층구조 BaTiO3 박막을 제조하여 적층방법에 따른 전기적 특성을 비교, 평가하였다. BaTiO3 박막은 ITO 투명전전막이 입혀진 유리기판위에 rf=magnetron sputtering방법으로 형성하였으며 적층구조 BaTiO3박막의 제조에는 다결정 BaTiO3 박막의 상부에 기판의 자연 냉각과정중에 비정질층이 형성되는 새로운 적층방법을 사용하였다. 이와같이 제조된 적층박막은 다결정 BaTiO3 박막의 상부에 상온에서 비정질층을 형성시키는 일반적인 적층방법으로 제조한 적층박막에 비하여 높은 단위면적당 정전용량과 유전상수, 우수한 절연특성을 나타내었다. 일반적인 적층방법에 의하여 이중층 구조가 형성되는 반면, 새로운 적층방법으로 제조된 적층박막은 AES depth profile과 전기적 특성 분석을 통하여 비정질/microcrystalline/다결정 구조의 다층구조를 지닌 것으로 확인되었다.

• 한국자기학회지
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• 제19권2호
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• pp.47-51
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• 2009

유리판 위에 증착된 다결정 Fe 자성박막의 두께에 따른 표면 결정 구조가 Ti : Sapphire 레이저를 사용하여 조사되었다. 비선형 광학 유전율의 결정구조에 따른 대칭성에 대한 계산으로부터 박막 표면은 $C_{2v}$에 매우 가까운 $C_s$ 구조를 갖음을 보였다. 이러한 광학적 회전 이방성은 임의 방향의 그레인으로 구성된 다결정 구조의 박막에서는 매우 이례적인 일이다. 이차조화파로부터 얻은 이 결과는 (110) bcc 형태로 자란 X선 회절 결과와도 일치하는 것으로 매우 얇은 상태일 때 가지고 있던 박막 표면의 등방 구조가 두께가 증가함에 따라 바뀌면서 bulk 상태의 구조를 점차적으로 갖게 됨을 보여주고 있다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.202.2-202
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• 2000

• 한국세라믹학회지
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• 제17권1호
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• pp.5-7
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• 1980

The electrical conductivity of polycrystalline $Gd_2O_3$ has been measured over the temperature range of 650 to 100$0^{\circ}C$ under the oxygen pressure range of $10^{-6}$ to 102 torr. The oxygen pressure dependence of electrical conductivity, $\sigma$ PO211/n is characterized by n value of about 5.3. The defect structure and the type of the oxide are controlled by triply ionized metal vacancies and holes.

• 전기화학회지
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• 제17권1호
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• pp.18-25
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• 2014

A Pt nanoparticle-decorated multiwall carbon nanotube (Pt-MWNT) electrode was prepared on Nafion by a hot-pressing at relatively low temperature. This electrode exhibited an intricate entangled, nanoporous structure as a result of gathering highly anisotropic Pt-MWNTs. Individual Pt nanoparticles were confirmed to have a polycrystalline face-centered cubic structure with an average crystal size of around 3.5 nm. From the cyclic voltammograms for hydrogen redox reactions, the Pt-MWNT electrode was found to have a similar electrochemical behavior to polycrystalline Pt, and a specific electrochemical surface area of $2170cm^2mg^{-1}$. Upon exposure to hydrogen analyte, the Pt-MWNT/Nafion electrode demon-strated a very high sensitivity of $3.60{\mu}A\;ppm^{-1}$ and an excellent linear response over the concentration range of 100-1000 ppm. Moreover, this electrode was also evaluated in terms of response and recovery times, reproducibility, and long-term stability. Obtained results revealed good sensing performance in hydrogen detection.

• 한국표면공학회지
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• 제33권2호
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• pp.126-134
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• 2000

This study investigated the bath compositions and plating conditions and crystal structure used for achieving nickel-thallium-phosphorus deposits by means electroless plating. The electroless nickel-thallium-phosphorus deposits were achieved with a bath using sodium hypophosphite as the reducing agent and sodium citrate as the complexing agent. The depositing rate was 10.5mg.$cm^{2-1}$ .$hr^{-1 }$ from the optimistic bath composition, 0.1M nickel sulfate, 0.005M thallium sulfate, 0.2M sodium hypophosphite, and 0.05M sodium citrat and the recommended plating conditions, pH 5.5 and $90^{\circ}C$. The composition of alloy deposits determined by X-ray analysis (EDS) that the Thallium was increased with major increasing concentration of complexing agent and thallium ion in bath solution, it decreased according to the increasing concentrations of reduction agent in the bath solution, Bit Phosphorus showed a contrary to the thallium. It was observed from X-ray diffraction analysis, Scanning Electron Microscopy and Transmission Electron Microscopy. The crystalline structure of deposits was amorphous at the first deposited state but it was changed $Ni-T1-Ni_{5}$ $P_2$ polycrystalline when subjected to 1 hour heat treatment of more than $350^{\circ}C$. TEM observation demonstrated that the microstructure was identical to the result of the XRD at as deposited but it became $Ni-Tl-Ni_{5}$ $P_2$ polycrystalline when heated. And grain size was 10-50nm.

• 한국세라믹학회지
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• 제44권8호
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• pp.403-406
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• 2007

Ferroelectric Ce-doped $Bi_4Ti_3O_{12}$ (BCT) thin films were deposited by liquid delivery metal organic chemical vapor deposition (MOCVD) onto a $Pt(111)/Ti/SiO_2/Si(100)$ substrate. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface, and the cross-section morphology of the deposited ferroelectric flims. After annealing above $640^{\circ}C$, the BCT films exhibited a polycrystalline structure with preferred (001) and (117) orientations. The BCT lam capacitor with a top Pt electrode showed a large remnant polarization ($2P_r$) of $44.56{\mu}C/cm^2$ at an applied voltage of 5 V and exhibited fatigue-free behavior up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz. This study clearly reveals that BCT thin film has potential for application in non-volatile ferroelectric random access memories and dynamic random access memories.

• 한국세라믹학회지
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• 제53권2호
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• pp.227-233
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• 2016

In order to make a highly ordered three-dimensional porous structure of titania ceramics, porogen beads of PS [Polystyrene] and PMMA [poly(methylmetacrylate)] were prepared by emulsion polymerization using styrene monomer and methyl methacrylate monomer, respectively. The uniform beads of PS or PMMA latex were closely packed by centrifugation as a porogen template for the infiltration of titanium butoxide solution. The mixed compound of PS or PMMA with titanium butoxide was dried and the dry compacts were calcined at $450^{\circ}C-750^{\circ}C$ according to the firing schedule to prepare micro- and meso- structures of polycrystalline titania with monodispersed porosity. Inorganic frameworks composed of $TiO_2$ were formed and showed a three Dimensionally Ordered Microstructure [3DOM] of $TiO_2$ ceramics. The pulverized particles of the $TiO_2$ ceramic skeleton were characterized using XRD analysis. A monodispersed crystalline micro-structure with micro/meso porosity was observed by FE-SEM with EDX analysis. The 3DOM $TiO_2$ skeleton showed opalescent color tuning according to the direction of light.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.13-16
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• 2009

In this study, AlN thin films were deposited on a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a pulsed reactive magnetron sputtering system. AFM, XRD and FT-IR were used to analyze structural properties and preferred orientation of the AlN/3C-SiC thin film. Suitability of the film in SAW applications was investigated by comparing the SAW characteristics of an interdigital transducer (IDT)/AlN/3C-SiC structure with the IDT/AIN/Si structure at 160 MHz in the temperature range $30-150^{\circ}C$. These experimental results showed that AlN films on the poly 3C-SiC layer were highly (002) oriented. Furthermore, the film showed improved temperature stability for the SAW device, $TCF\;=\;-18\;ppm//^{\circ}C$. The change in resonance frequency according to temperature was nearly linear. The insertion loss decrease was about $0.033dB/^{\circ}C$. However, some defects existed in the film, which caused a slight reduction in SAW velocity.