• Title/Summary/Keyword: Polycrystalline structure

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Electrochemical and Optical Studies on the Passivation of Nickel (니켈의 부동화에 관한 전기화학적 및 광학적 연구)

  • Dong Jin Kim;Woon-Kie Paik
    • Journal of the Korean Chemical Society
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    • v.26 no.6
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    • pp.369-377
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    • 1982
  • The technique of combined-measurement of reflectance and ellipsometric parameters was used for studying the anodic film formed on nickel surface in basic solutions. An ellipsometer was automated for transient measurements by way of modulating the plane-polarized light with the Faraday effect. Surface film was formed electrochemically by applying a potential step from the reduction potential range to the passivation range on a polished, high-purity, polycrystalline nickel specimen. From that instant, the changes in the reflectance(r) and the ellipsometric parameters(${\Delta},{\Psi}$) of the surface film were recorded by the automatic ellipsometer. Three exact simultaneous equations including these optical signals, ${\Delta},{\Psi}$ and r were solved numerically with a computer in order to determine the optical properties, n, k, and the thickness, ${\tau}$, of the surface film. From the computed results which showed dependence on pH and time, it was found that passivation of nickel can be effectively attained by surface film thinner than $15{\AA}$ and this passivation film has a small optical absorption coefficient. It seemed that a high pH environment enhances the rate of passivation and is favorable for a denser structure of the surface film. The experimental evidence is in accordance with the hypothesis that the composition of the passive film can be approximated by $Ni(OH)_2$ in the early stage of passivation and that as time passes the composition changes partially toward that of NiO through dehydration.

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Nearly single crystal, few-layered hexagonal boron nitride films with centimeter size using reusable Ni(111)

  • Oh, Hongseok;Jo, Janghyun;Yoon, Hosang;Tchoe, Youngbin;Kim, Sung-Soo;Kim, Miyoung;Sohn, Byeong-Hyeok;Yi, Gyu-Chul
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.286-286
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    • 2016
  • Hexagonal boron nitride (hBN) is a dielectric insulator with a two-dimensional (2D) layered structure. It is an appealing substrate dielectric for many applications due to its favorable properties, such as a wide band gap energy, chemical inertness and high thermal conductivity[1]. Furthermore, its remarkable mechanical strength renders few-layered hBN a flexible and transparent substrate, ideal for next-generation electronics and optoelectronics in applications. However, the difficulty of preparing high quality large-area hBN films has hindered their widespread use. Generally, large-area hBN layers prepared by chemical vapor deposition (CVD) usually exhibit polycrystalline structures with a typical average grain size of several microns. It has been reported that grain boundaries or dislocations in hBN can degrade its electronic or mechanical properties. Accordingly, large-area single crystalline hBN layers are desired to fully realize the potential advantages of hBN in device applications. In this presentation, we report the growth and transfer of centimeter-sized, nearly single crystal hexagonal boron nitride (hBN) few-layer films using Ni(111) single crystal substrates. The hBN films were grown on Ni(111) substrates using atmospheric pressure chemical vapor deposition (APCVD). The grown films were transferred to arbitrary substrates via an electrochemical delamination technique, and remaining Ni(111) substrates were repeatedly re-used. The crystallinity of the grown films from the atomic to centimeter scale was confirmed based on transmission electron microscopy (TEM) and reflection high energy electron diffraction (RHEED). Careful study of the growth parameters was also carried out. Moreover, various characterizations confirmed that the grown films exhibited typical characteristics of hexagonal boron nitride layers over the entire area. Our results suggest that hBN can be widely used in various applications where large-area, high quality, and single crystalline 2D insulating layers are required.

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Fracture resistance of ceramic brackets to arch wire torsional force (토오크 양에 따른 세라믹 브라켓의 파절 저항성)

  • Han, Jung-Heum;Chang, Minn-Hii;Lim, Yong-Kyu;Lee, Dong-Yul
    • The korean journal of orthodontics
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    • v.37 no.4
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    • pp.293-304
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    • 2007
  • The purpose of this study was to estimate the fracture resistance of commercially available ceramic brackets to torsional force exerted from arch wires and to evaluate the characteristics of bracket fracture. Methods: Lingual root torque was applied to maxillary central incisor brackets with 0.022-inch slots by means of a $022\;{\times}\;028-inch$ stainless steel arch wire. A custom designed apparatus that attached to an Instron was used to test seven types of ceramic brackets (n = 15). The torque value and torque angle at fracture were measured. In order to evaluate the characteristics of failure, fracture sites and the failure patterns of brackets were examined with a Scanning Electron Microscope. Results: Crystal structure and manufacturing process of ceramic brackets had a significant effect on fracture resistance. Monocrystalline alumina (Inspire) brackets showed significantly greater resistance to torsional force than polycrystalline alumina brackets except InVu. There was no significant difference in fracture resistance during arch wire torsional force between ceramic brackets with metal slots and those without metal slots (p > 0.05). All Clarity brackets partially fractured only at the incisal slot base and the others broke at various locations. Conclusion: The fracture resistance of all the ceramic brackets during arch wire torsion appears to be adequate for clinical use.

Enhancement of photoluminescence and electrical properties of Ga doped ZnO thin film grown on $\alpha$-$Al_2O_3$(0001) single crystal substrate by RE magnetron sputtering through rapid thermal annealing (RF 마그네트론 스퍼터링 법으로 사파이어 기판 위에 성장시킨 ZnO: Ga 박막의 RTA 처리에 따른 photoluminescence 특성변화)

  • Cho, Jung;Na, Jong-Bum;Oh, Min-Seok;Yoon, Ki-Hyun;Jung, Hyung-Jin;Choi, Won-Guk
    • Journal of the Korean Vacuum Society
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    • v.10 no.3
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    • pp.335-340
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    • 2001
  • $Ga_2O_3$(1 wt%)-doped ZnO(GZO) thin films were grown on ${\alpha}-Al_2O_3$ (0001) by rf magnetron sputtering at $510^{\circ}C$, whose crystal structure was polycrystalline. As-grown GZO thin film shows poor electrical properties and photoluminescence (PL) spectra. To improve these properties, GZO thin films were annealed at 800-$900^{\circ}C$ in $N_2$atmosphere for 3 min. After the rapid thermal annealing(RTA), deep defect-level emission disappears and near-band emission is greatly enhanced. Annealed GZO thin films show very low resisitivity of $2.6\times10^{-4}\Omega$/cm with $3.9\times10^{20}/\textrm{cm}^3$ carrier concentration and exceptionally high mobility of 60 $\textrm{cm}^2$/V.s. These improved physical properties are explained in terms of translation of doped-Ga atoms from interstitial to substitutional site.

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Crystallographic and Magnetic Properties of a Perovskite La1/3Sr2/3FeO2.96 (페롭스카이트 La1/3Sr2/3FeO2.96의 결정학적 및 자기적 성질에 관한 연구)

  • Yoon, Sung-Hyun
    • Journal of the Korean Magnetics Society
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    • v.15 no.3
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    • pp.167-171
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    • 2005
  • Detailed aspects of the charge disproportionation (CD) transition for a polycrystalline $La_{1/3}Sr_{2/3}FeO_{2.96}$ were studied with the X-ray diffraction, $M\ddot{o}ssbauer$ spectroscopy, and SQUID magnetometer. The crystal structure was found to be rhombohedral with a space group R/3c. The lattice parameters were $a_R=5.4874\;\AA,\;and\;a_R=60.07^{\circ}$, respectively. $M\ddot{o}ssbauer$ spectra were taken within a wide range of temperature from 4.2 K up to room temperature. In the low temperature region, the spectra were comprised of two superimposed sextets which originated from $Fe^{3+}\;and\;Fe^{5+}$, respectively. This was the antiferromagnetic mixed valence state produced by the charges disproportionated into two different species. In the high temperature region, however, only a singlet from $Fe^{3.6+}$ was observed, indicating that it was a paramagnetic averaged valence state. The CD transition occurred in the temperature range from 175 K to 200 K, in which the two phases coexisted. The origin for the CD transition was explained by the thermally generated fast hopping of electrons. Hysteresis loop showed that there existed a strong antiferromagnetic interaction among magnetic ions. As the temperature increased thru the CD transition temperature, it was very likely that the interaction between $Fe^{3+}\;and\;Fe^{5+}$ was replaced by a more stronger one.

Polarization Precession Effects for Shear Elastic Waves in Rotated Solids

  • Sarapuloff, Sergii A.
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2013.04a
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    • pp.842-848
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    • 2013
  • Developments of Solid-State Gyroscopy during last decades are impressive and were based on thin-walled shell resonators like HRG or CRG made from fused quartz or leuko-sapphire. However, a number of design choices for inertial-grade gyroscopes, which can be used for high-g applications and for mass- or middle-scale production, is still very limited. So, considerations of fundamental physical effects in solids that can be used for development of a miniature, completely solid-state, and lower-cost sensor look urgent. There is a variety of different types of bulk acoustic (elastic) waves (BAW) in anisotropic solids. Shear waves with different variants of their polarization have to be studied especially carefully, because shear sounds in glasses and crystals are sensitive to a turn of the solid as a whole, and, so, they can be used for development of gyroscopic sensors. For an isotropic medium (for a glass or a fine polycrystalline body), classic Lame's theorem (so-called, a general solution of Elasticity Theory or Green-Lame's representation) has been modified for enough general case: an elastic medium rotated about an arbitrary set of axes. Travelling, standing, and mixed shear waves propagating in an infinite isotopic medium (or between a pair of parallel reflecting surfaces) have been considered too. An analogy with classic Foucault's pendulum has been underlined for the effect of a turn of a polarizational plane (i.e., an integration effect for an input angular rate) due to a medium's turn about the axis of the wave propagation. These cases demonstrate a whole-angle regime of gyroscopic operation. Single-crystals are anisotropic media, and, therefore, to reflect influence of the crystal's rotation, classic Christoffel-Green's tensors have been modified. Cases of acoustic axes corresponding to equal velocities for a pair of the pure-transverse (shear) waves have of an evident applied interest. For such a special direction in a crystal, different polarizations of waves are possible, and the gyroscopic effect of "polarizational precession" can be observed like for a glass. Naturally, formation of a wave pattern in a massive elastic body is much more complex due to reflections from its boundaries. Some of these complexities can be eliminated. However, a non-homogeneity has a fundamental nature for any amorphous medium due to its thermodynamically-unstable micro-structure, having fluctuations of the rapidly-frozen liquid. For single-crystalline structures, blockness (walls of dislocations) plays a similar role. Physical nature and kinematic particularities of several typical "drifts" in polarizational BAW gyros (P-BAW) have been considered briefly too. They include irregular precessions ("polarizational beats") due to: non-homogeneity of mass density and elastic moduli, dissymmetry of intrinsic losses, and an angular mismatch between propagation and acoustic axes.

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Mössbauer Studies of Changed Interaction on Cr Ions in Chromite (Chromite 물질의 자기상호작용에 관한 뫼스바우어 분광연구)

  • Choi, Kang-Ryong;Kim, Chul-Sung
    • Journal of the Korean Magnetics Society
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    • v.17 no.1
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    • pp.47-50
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    • 2007
  • [ $ZnCr_2O_4$ ] shows geometrically frustrated magnet. Recently, $CoCr_2O_4$ has been investigated for multiferroic property and dielectric anomalies by spin-current model. Polycrystalline $CoCr_2O_4$ and $CoCrFeO_4$ compounds was prepared by wet-chemical process. Crystallographic and magnetic properties of $CoCr_2O_4$ and $CoCrFeO_4$ were investigate by using the x-ray diffractometer(XRD), vibrating sample magnetometer(VSM), superconducting quantum interference device magnetometer(SQUID), and $M\"{o}ssbauer$ spectroscopy. The crystal structure was found to be single-phase cubic spinel with space group of Fd3m. The lattice constants of $CoCr_2O_4$ and $CoCrFeO_4$ $a_0$ were determined to be 8.340 and 8.377 ${\AA}$, respectively. The ferrimagnetic transition temperature for the both samples were observed at 97 K and 320 K. The $M\"{o}ssbauer$ absorption spectra at 4.2 K show that the well developed two sextets are superposed with small difference of hyperfine field($H_{hf1}=507\;and\;H_{hf2}=492\;kOe$). Isomer shift values($\delta$) of the two sextets are found to be 0.33 and 0.34 mm/s relative to the Fe metal, respectively, which are consistent with the high spin $Fe^{3+}$ charge state.

Characteristics of TiN Barrier Metal Prepared by High Density Plasma CVD Method (고밀도 플라즈마 CVD 방법에 의한 TiN barrier metal 형성과 특성)

  • Choe, Chi-Gyu;Gang, Min-Seong;O, Gyeong-Suk;Lee, Yu-Seong;O, Dae-Hyeon;Hwang, Chan-Yong;Son, Jong-Won;Lee, Jeong-Yong;Kim, Geon-Ho
    • Korean Journal of Materials Research
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    • v.9 no.11
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    • pp.1129-1136
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    • 1999
  • TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.

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Facile Chemical Growth of Cu(OH)2 Thin Film Electrodes for High Performance Supercapacitors (간단한 화학적 합성을 통한 고성능 슈퍼캐패시터용 수산화 구리 전극)

  • Patil, U.M.;Nam, Min Sik;Shinde, N.M.;Jun, Seong Chan
    • KEPCO Journal on Electric Power and Energy
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    • v.1 no.1
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    • pp.175-180
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    • 2015
  • A facile soft chemical synthesis route is used to grow nano-buds of copper hydroxide [$Cu(OH)_2$] thin films on stainless steel substrate[SS]. Besides different chemical methods for synthesis of $Cu(OH)_2$ nanostructure, the chemical bath deposition (CBD) is attractive for its simplicity and environment friendly condition. The structural, morphological, and electro-chemical properties of $Cu(OH)_2$ thin films are studied by means of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FESEM), cyclic voltammetry (CV) and galvanostatic charge-discharge (GCD) measurement techniques. The results showed that, facile chemical synthesis route allows to form the polycrystalline, granular nano-buds of $Cu(OH)_2$ thin films. The electrochemical properties of $Cu(OH)_2$ thin films are studied in an aqueous 1 M KOH electrolyte using cyclic voltammetry. The sample exhibited supercapacitive behavior with $340Fg^{-1}$ specific capacitance. Moreover, electrochemical capacitive measurements of $Cu(OH)_2/SS$ electrode exhibit a high specific energy and power density about ${\sim}83Wh\;kg^{-1}$ and ${\sim}3.1kW\;kg^{-1}$, respectively, at $1mA\;cm^{-2}$ current density. The superior electrochemical properties of copper hydroxide ($Cu(OH)_2/SS$) electrode with nano-buds like structure mutually improves pseudocapacitive performance. This work evokes scalable chemical synthesis with the enhanced supercapacitive performance of $Cu(OH)_2/SS$ electrode in energy storage devices.

Effect of RTA Temperature on the Structural and Optical Properties of HfO2 Thin Films (급속 열처리 온도가 HfO2 박막의 구조적 및 광학적 특성에 미치는 효과)

  • Chung, Yeun-Gun;Joung, Yang-Hee;Kang, Seong-Jun
    • The Journal of the Korea institute of electronic communication sciences
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    • v.14 no.3
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    • pp.497-504
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    • 2019
  • We fabricated $HfO_2$ thin films using RF magnetron sputtering method, and investigated structural and optical properties of $HfO_2$ thin films with RTA temperatures in $N_2$ ambient. $HfO_2$ thin films exhibited polycrystalline structure regardless of annealing process, FWHM of M (-111) showed reduction trend. The surface roughness showed the smallest of 3.454 nm at a annealing temperature of $600^{\circ}C$ in result of AFM. All $HfO_2$ thin films showed the transmittance of about 80% in visible light range. By fitting the refractive index from the transmittance and reflectance to the Sellmeir dispersion relation, we can predict the refractive index of the $HfO_2$ thin film according to the wavelength. The $HfO_2$ thin film annealed at $600^{\circ}C$ exhibited a high refractive index of 2.0223 (${\lambda}=632nm$) and an excellent packing factor of 0.963.