• Bulletin of the Korean Chemical Society
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• v.19 no.2
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• pp.178-183
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• 1998

Carbon-13 CP-MAS NMR techniques were used to investigate dynamics of new combined type liquid crystalline polymers, poly[oxy-1,4-phenyleneoxy-2-{6-(4-(4-butylphenylazo)phenoxy)hexyloxy}terephthaloyl] and poly[oxy-1,4-phenyleneoxy-2-{10-(4-(4-butylphenylazo)phenoxy)decyloxy}terephthaloyl]. Noticeable mobility change of either aromatic groups or methylene groups is not detected between 25 ℃ and 82 ℃ from 13C spinlattice relaxation time in the rotating frame (T1ρ(C)) and contact time array experiments. However, line shape analysis shows the increase of mobility of methylene carbons in poly[oxy-1,4-phenyleneoxy-2-{6-(4-(4-butylphenylazo)phenoxy)hexyloxy}terephthaloyl] at higher temperature. The dynamics of side chanis does not seem to be affected in our experimental temperature range by the length of aliphatic chain which is connecting the side chain group to the main chain.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.396-401
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• 1999

In this study, $Ar^+$ ion laser etching process of single/poly-crystalline Si with $CCl_2F_2$ gas is investigated for MEMS applications. In general, laser direct etching process is useful in microelectronic process, fabrication of micro sensors and actuators, rapid prototyping, and complementary processing because of the advantages of 3D micromachining, local etching/deposition process, and maskless process with high resolution. In this study, a pyrolytic method, in which $CCl_2F_2$ gasetches molten Si by the focused laser, was used. In order to analyze the temperature profile of Si by the focused laser, the 3D heat conduction equation was analytically solved. In order to investigate the process parameters dependence of etching characteristics, laser power, $CCl_2F_2$ gas pressure, and scanning speed were varied and the experimental results were observed by SEM. The aspect ratio was measured in multiple scanning and the simple 3D structure was fabricated. In addition, the etching characteristics of $6\mum$ thick poly-crystalline Si on the insulator was investigated to obtain flat bottom and vertical side wall for MEMS applications.

• Membrane Journal
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• v.34 no.3
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• pp.192-203
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• 2024

The advancement of commercially viable gas separation membranes plays a pivotal role in improving CO₂ separation efficiency. High-molecular-weight poly(ethylene oxide) (high-Mw PEO) emerges as a promising option due to its high CO₂ solubility, affordability, and robust mechanical attributes. However, the crystalline nature of high-Mw PEO hinders its application in gas separation membranes. This study proposes a straightforward blending approach by incorporating various polymeric additives into high-Mw PEO to address this challenge. Four commercially available, water-soluble polymers, i.e. poly(ethylene glycol) (PEG), poly(propylene glycol) (PPG), poly(acrylic acid) (PAA), and poly(vinyl pyrrolidone) (PVP) are examined as additives to enhance membrane performance by improving miscibility and reducing PEO crystallinity. Contrary to expectations, PEG and PPG fail to inhibit the crystalline structure of PEO and result in membrane flaws. Conversely, PAA and PVP demonstrate greater success in altering the crystal structure of PEO, yielding defect-free membranes. A thorough investigation delves into the correlation between changes in the crystalline structure of high-Mw PEO blend membranes and their gas separation performance. Drawing from our findings and previously documented outcomes, we offer insights into designing and selecting additive polymers for high-Mw PEO, aiming at the creation of cost-effective, commercially viable CO₂ separation membranes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.525-531
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• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.68-68
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• 2001

Thin films of polycrystalline silicon (poly-Si) is a promising material for use in large-area electronic devices. Especially, the poly-Si can be used in high resolution and integrated active-matrix liquid-crystal displays (AMLCDs) and active matrix organic light-emitting diodes (AMOLEDs) because of its high mobility compared to hydrogenated _amorphous silicon (a-Si:H). A number of techniques have been proposed during the past several years to achieve poly-Si on large-area glass substrate. However, the conventional method for fabrication of poly-Si could not apply for glass instead of wafer or quartz substrate. Because the conventional method, low pressure chemical vapor deposition (LPCVD) has a high deposition temperature ($600^{\circ}C-1000^{\circ}C$) and solid phase crystallization (SPC) has a high annealing temperature ($600^{\circ}C-700^{\circ}C$). And also these are required time-consuming processes, which are too long to prevent the thermal damage of corning glass such as bending and fracture. The deposition of silicon thin films on low-cost foreign substrates has recently become a major objective in the search for processes having energy consumption and reaching a better cost evaluation. Hence, combining inexpensive deposition techniques with the growth of crystalline silicon seems to be a straightforward way of ensuring reduced production costs of large-area electronic devices. We have deposited crystalline poly-Si thin films on soda -lime glass and SiOz glass substrate as deposited by PVD at low substrate temperature using high power, magnetron sputtering method. The epitaxial orientation, microstructual characteristics and surface properties of the films were analyzed by TEM, XRD, and AFM. For the electrical characterization of these films, its properties were obtained from the Hall effect measurement by the Van der Pauw measurement.

• Polymer(Korea)
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• v.33 no.4
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• pp.297-306
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• 2009

A homologous series of side chain liquid crystalline polymers, poly [1-{4-(4'-cyanophenylazo)phenoxyalkyloxy}ethylene]s(CAPETn, where n, the number of methylene units in the spacer, is $2{\sim}10$) were synthesized from poly(vinyl alcohol) and 1-{4-(4'-cyanophenylazo)phenoxy}alkylbromides(CAPBn, n=$2{\sim}10$), and their thermotropic liquid crystalline phase behaviors were investigated. The CAPBn with n of $2{\sim}5$ did not show any liquid crystalline behavior, while those with n of 6 and $7{\sim}10$ showed enantiotropic and monotropic nematic phases, respectively. In contrast, among the CAPETn polymers, only CAPET5 exhibited an enantiotropic nematic phase, while other polymers showed monotropic nematic phases. The isotropic-nematic transition temperatures of CAPETns and their entropy variation at the phase transition that were higher values than those of CAPBns, demonstrated a typical odd-even effect as a function of n. These phase transition behaviors were disscussed in terms of the 'virtual trimer model' by Imrie. The mesophase properties of CAPETns were largely different from those reported for the polymers in which the (cyanophenylazo) phenoxy groups are attached to polyacrylate, polymethacrylate, and polystyrene backbones through polymethylene spacers. The results indicate that the mode of chemical linkage of the side group with the main chain plays an important role in the formation, stabilization, and type of mesophase.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.322-325
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• 2000

N-channel poly-Si TFT, Processed by Solid Phase Crystalline(SPC) on a glass substrate, has been investigated by measuring its electrical properties before and after electrical stressing. It is observed that the threshold voltage shift due to electrical stress varies with various stress conditions. Threshold voltages measured in 1.5$\mu\textrm{m}$ and 3$\mu\textrm{m}$ poly-Si TFTs are 3.3V, 3.V respectively. With the threshold voltage shia the degradation of transconductance(G$\_$m/) and subthreshold swing(S) is also observed.

• Proceedings of the Korean Fiber Society Conference
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• 1998.04a
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• pp.20-24
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• 1998

Poly(ethylene 2,6-naphthalate) (PEN) has been known since 1948, when its synthesis was first reported by ICI. Co. In spite of its long history. application of PEN is limited as compared with poly(ethylene terephthalate) (PET). because PEN monomer is very expensive, and PEN exhibits relatively high melt viscosity that is not easy for fiber spinning and injection molding.(omitted)

• Proceedings of the Korean Fiber Society Conference
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• 2003.10b
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• pp.52-54
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• 2003

Poly(vinyl alcohol) (PVA) obtained by the saponification of poly(vinyl ester) is a linear semicrystalline polymer; these polymers have been widely used as fibers for clothes and industries, binders, films, membranes, medicines for drug delivery system, and cancer cell-killing embolic materials. PVA fibers have high tensile and compressive strength, tensile modulus, and abrasion resistance because of the highest crystalline lattice modulus. (omitted)

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.