• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.71-77
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• 1996

Considering that polycrystalline silicon, a structural material of the micromachining, is affected by a sacrificial oxide layer, the poly-oxide obtained by the thermal oxidation of polycrystalline silicon is newly proposed and estimated as the sacrificial oxide layer. The grain size of the polycrystalline silicon grown on the poly-oxide is larger than that of poly crystalline silicon grown on the conventional sacrificial oxide layer. As a result of XRD, increase of (111) textures and formation of additional (220) textures are observed on the polycrystaIline silicon deposited on the poly-oxide. Also, the polycrystalline silicon grown on the poly-oxide represents small and uniform stress.

• Transactions on Electrical and Electronic Materials
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• v.6 no.2
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• pp.57-62
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• 2005

Using intense pulsed ion beam evaporation technique, we have succeeded in the preparation of poly crystalline silicon thin films without impurities on silicon substrate. Good crystallinity and high deposition rate have been achieved without heating the substrate by using lEE. The crystallinity of poly-Si film has been improved with the high density of the ablation plasma. The intense diffraction peaks of poly-Si thin films could be obtained by using the substrate bias system. The crystallinity and the deposition rate of poly-Si thin films were increased by applying (-) bias voltage for the substrate.

• Fibers and Polymers
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• v.2 no.3
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• pp.129-134
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• 2001

Liquid crystalline (LC) poly(ethylene terephthalate-co-2(3)-chloro-1,4-phenylene terephthalate) (50/50, mole/mole) [PECPT] was synthesized and blended with polycarbonate (PC). LC properties of PECPT and thermal, morphological, and rheological behaviors of the PECPT/PC blend were studied. PECPT showed the nematic LC phase and much longer relaxation time than poly(ethylene terephthalate) (PET). The apparent melt viscosity of PECPT was one third of that of FET. An abrupt torque change was observed during the blending process due to the orientation of LC domains. For the blends containing 10~30 wt% of PECPT, the complex viscosities were higher than that of PC. As PECPT content increases above 40 wt%, shear thinning was observed. The lowest complex viscosity was obtained at 40~50 wt%. Transesterification of PECPT and PC was confirmed by the selective chemical degradation of carbonate groups in PC.

• The Korean Journal of Rheology
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• v.9 no.2
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• pp.53-59
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• 1997

열방성 액정고분자(LCP)와 polycarbonate(PC) poly(ether imide) (PEI) poly(PEEK), polysulfone(PSF), 그리고 polyarylsulfone(PAS)과의 블렌드에 대한 상용성을 연구하였다. 제조된 블렌드의 상거동에서 액정고분자가 PC-, PEI-, PEEK-, PSF-, 그리고 PAS-rich 상 에 녹아 들어가는 양이 PC, PEI, PEEK, PSF, 그리고 PAS가 액정 고분자 -rich상에 녹아들 어가는 양보다 많음을 알수 있었다. 측정된 블렌드의 유리전이온도 결과로부터 PC, PEI, PEEK와 액정고분자 사이의 상용성이 PSF, PAS와 액정 고분자 사이의 상용성에 비하여 더 좋음을 알수 있었다. 액정 고분자의 이방성을 고려하여 고분자-고분자 상호작용계수($\chi$12)를 결정하였으며, PC, PEI, PEEK, PSF, 그리고 PAS를 포함한 액정 고분자 블렌드에서 $\chi$12는 0.078-0.183으로 나타났다.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.1001-1003
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• 1998

In this paper, $Ar^+$ ion laser etching process of single/poly crystalline silicon with $CCl_{2}F_{2}$ gas is studied for MEMS applications. To investigate the effects of process parameters, laser power, gas pressure, scanning speed were varied and multiple scanning was carried out to obtain high aspect ratio. In addition, scanning width was varied to observe the trench profile etched in repeating scanning cycle. From the etching of $2.6{\mu}m$ thick polycrystalline Si deposited on insulator, trench with flat bottom and vertical side wall was obtained and it is possible to apply this results for MEMS applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.3
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• pp.120-125
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• 2002

Si-wafers for solar cells were cast in a size of $50{\times}46{\times}0.5{\textrm}{mm}^3$ by vacuum casting method. The graphite mold coated by BN powder, which was to prevent the reaction of carbon with the molten silicon, was used. Without coating, the wetting and reaction of Si melt to graphite mold was very severe. In the case of BN coating, SiC was formed in the shape of tiny islands at the surface of Si wafer by the reaction between Si-melt and carbon of the graphite mold on the high temperature. The grain size was about 1 mm. The efficiency of Si solar cell was lower than that of Si solar cell fabricated on commercial single and poly crystalline Si wafer. The reason of low efficiency was discussed.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.342-344
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• 1995

Using piezoresistive effects of single-crystal and poly-crystalline silicon, pressure sensors of the same pattern were fabricated for comparison of temperature characteristics. Optimum size and aspect ratio of rectangular sensor diaphragm were calculated by FEM. For polsilicon pressure sensor, polysilicon resistors of Wheatstone bridge were deposited by LPCVD to be used in a wide' temperature range. Polysilicon pressure sensors showed more stable temperature characteristics than single-crysta1 silicon in the range of $-20\sim125[^{\circ}C]$. To get low TCO (Temperature Coefficient of Offset), below $\pm$3 [${\mu}V/V/^{\circ}C$], it is needed for each TCR of piezoresistors to have a deviation within $\pm25[ppm/^{\circ}C]$ less than $\pm500[ppm/^{\circ}C]$ of resistors for polysilicon pressure sensor can result in low TCS(Temperature Coefficient of Sensitivity) of -0.1[%FS/$^{\circ}C$].

• Proceedings of the Korean Fiber Society Conference
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• 1998.10a
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• pp.236-239
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• 1998

The in situ composites based on poly(ethylene 2,6-naphthalate) and thermotropic liquid crystalline polymer (LCP) have been an area of increasing interest and study, since LCP exhibits high chemical stabilities and excellent thermo mechanical properties such as high strength and modulus. In a binary, however, poor compatibility and interfacial adhesions between two phases frequently results in deteriorated mechanical properties. (omitted)

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1816-1821
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• 2003

The sapphire wafer for blue light emitting device was manufactured by the implementation of the chemical and mechanical polishing process. The surface polishing of crystalline sapphire wafer was characterized by zeta potential measurement. The reduction process with the alkali slurry provides the surface chemical reaction with sapphire atoms. The poly-urethane pad also provides the frictional force to take out the chemically-reacted surface layers. The surface roughness was measured by the atomic force microscope and the crystalline quality was characterized by the double crystal X -ray diffraction analysis.

• Bulletin of the Korean Chemical Society
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• v.17 no.11
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• pp.1004-1009
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• 1996

The interactions between a rod-coil liquid crystalline oligomer, ethyl 4-[4'-oxy-4-biphenylcarbonyloxy]-4'-biphenylcarboxylate with poly(ethylene oxide) (DP=12) (12-4) and LiCF3SO3 have been characterized by using Raman spectroscopy. Band assignments were made comparing the spectrum of 12-4 with those of the poly(ethylene glycol) monomethyl ether(PEGME) (Mw=550) and the ethyl-4'-hydroxybiphenyl-4-carboxylate (EHBPC), which are the coil and mesogen analogues, respectively. Analyzing characteristic bands of the 12-4-salt complex, we have found that the bands belonging to the coil and mesogenic units are changed in both intensities and frequencies. The spectral changes were interpreted from the viewpoint of the complexation between 12-4 and the Li+ ion. However, the possibility that the spectral changes in the mesogenic unit are not due to the complexation with the Li+ ion, but due to the conformational changes by the intercalation of nondissociated LiCF3SO3, is not ruled out.