• 한국세라믹학회지
• /
• 제50권6호
• /
• pp.480-484
• /
• 2013

Since SiOC was introduced as an anode material for lithium ion batteries, it has been studied with different chemical compositions and microstructures using various silicon based inorganic polymers. Poly(phenyl carbosilane) is a SiOC precursor with a high carbon supply in the form of the phenyl unit, and it has been investigated for film applications. Unlike any other siloxane-based polymers, oxygen atoms must be utilized in an oxidation process, and the amount of oxygen is controllable. In this study, SiOC anodes were prepared using poly(phenyl carbosilane) with different heat treatment conditions, and their electrochemical properties as an anode material for lithium ion batteries were studied. In detail, cyclic voltammetry and charge-discharge cycling behavior were evaluated using a half-cell. A SiOC anode which was prepared under a heat treatment condition at $1200^{\circ}C$ after an oxidation step showed stable cyclic performance with a reversible capacity of 360 mAh/g.

• 대한화학회지
• /
• 제40권5호
• /
• pp.347-356
• /
• 1996

트리플산에 의한 phenylsilane 의 선태적 분해반응에서는 silyltriflate ester 결합을 형성하였다. 1 혹은 2당량배의 트리플산에 의한 $Ph_3SiH$과 carbosilane 고분자$(Ph_2SiCH_2CH_2CH_2)n$의 Ph기 치환반응에서는 1 혹은 2치환 silyltriflate ester 결합을 형성하였으며 이들과 allylmagnesium bromide와의 반응에 의해 이에 상응되는 화합물을 높은 수율로 얻었다. Carbosilane 고분자의 나무가지꼴 실란거대분자를 allylation 과 hydrosilation법에 의해 제3세대(G3)까지 합성하였다.

• 한국세라믹학회지
• /
• 제52권4호
• /
• pp.243-247
• /
• 2015

Si(Al)ON precursor was synthesized by formation of new Si-N bond using organoaluminum imine and liquid type poly(phenyl carbosilane). It was decomposed between $200-600^{\circ}C$, and the ceramic yield was 51% after pyrolysis. 150 - 200 nm in thickness of coating film was obtained by spin coating method. The precursor was easily oxidized during process because it was unstable in air. However the oxygen content was limited to 0.5 - 0.7 to silicon in heat treatment step. Even though the content of nitrogen was decreased by pyrolysis, Al-N and Si-N bonds were formed in ammonia atmosphere, and Si(Al)ON film was formed with 0.2 in content to silicon.