• Title/Summary/Keyword: Polishing conditions

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A Study on the Development of Nonwoven Abrasive Pads and Charateristics of Electrolytic Machining (점탄성연마재 개발 및 전해가공특성에 관한 연구)

  • 김정두
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 1997.10a
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    • pp.190-195
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    • 1997
  • The requirement of precision products about difficult-to-cut materials such as Cu and Aluminum alloy is becoming more and more. Because of soft materials, the exist narrow groves on surface are difficult to gotten off even on the polishing stage. It has been proved that Magnetic-Electrolytic-Abrasive Polishing (MEAP) is a efficient method to resolve this problem by using the nonwoven-abrasive pads together [1, 2]. In this study, through the experiments, their machining properties of newly developer polishing material of SiC, Al2O3 and diamond nonwoven abrasive pads have been proved. Through the experiments, the optimal machining conditions on larger cylinder shape workpiece of Cu and Aluminium alloy have been found, through the Taguchi[3] method the optimal machining conditions can be selected.

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Reproducible Chemical Mechanical Polishing Characteristics of Shallow Trench Isolation Structure using High Selectivity Slurry

  • Jeong, So-Young;Seo, Yong-Jin;Kim, Sang-Yong
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.4
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    • pp.5-9
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    • 2002
  • Chemical mechanical polishing (CMP) has become the preferred planarization method for multilevel interconnect technology due to its ability to achieve a high degree of feature level planarity. Especially, to achieve the higher density and greater performance, shallow trench isolation (STI)-CMP process has been attracted attention for multilevel interconnection as an essential isolation technology. Also, it was possible to apply the direct STI-CMP process without reverse moat etch step using high selectivity slurry (HSS). In this work, we determined the process margin with optimized process conditions to apply HSS STI-CMP process. Then, we evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions. The wafer-to-wafer thickness variation and day-by-day reproducibility of STI-CMP process after repeatable tests were investigated. Our experimental results show, quite acceptable and reproducible CMP results with a wafer-to-wafer thickness variation within 400$\AA$.

Machining Characteristics according to Electrochemical Polishing (ECP) Conditions of Stainless Steel Mesh (스테인리스 망의 전기화학 폴리싱(ECP) 조건에 따른 가공 특성)

  • Kim, Uk Su;Park, Jeong Woo
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.14 no.6
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    • pp.41-48
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    • 2015
  • Stainless steel mesh has been used as a filter in various fields, including domestic, medical, etc. However, the surface before machining may have an adverse effect the product quality and performance because it is not smooth. Especially, adsorbed impurities in the surface result in difficulty in cleaning. Therefore, in this paper, we propose an improved surface quality through electrochemical polishing (ECP). Two electrodes, composed of STS304 (anode) and copper (cathode) underwent machining with two conditions according to polishing time and current density. As the polishing time and current density increase, the surface of curvature decreases, and roughness and material removal rate (MRR) improves. The machined surface roughness and image were obtained through the atomic force microscope (AFM) and stereoscopic microscope. The study also analyzed hydrophilic effect through contact angles. This obtains corrosion resistance, smoothness, hydrophilic property, etc.

A Study on the Optimal Machining of 12 inch Wafer Polishing by Taguchi Method (다구찌 방법에 의한 12인치 웨이퍼 폴리싱의 가공특성에 관한 연구)

  • Choi, Woong-Kirl;Choi, Seung-Gun;Shin, Hyun-Jung;Lee, Eun-Sang
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.11 no.6
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    • pp.48-54
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    • 2012
  • In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon. However, for many companies, it is hard to produce 400mm or 450mm wafers, because of excesive funds for exchange the equipments. Therefore, it is necessary to investigate 300mm wafer to obtain a better efficiency and a good property rate. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This research investigated the surface characteristics that apply variable machining conditions and Taguchi Method was used to obtain more flexible and optimal condition. In this study, the machining conditions have head speed, oscillation speed and polishing time. By using optimum condition, it achieves a ultra precision mirror like surface.

A Study on the Optimization of MR Fluid Polishing Conditions for Cover Glass Edge (MR Fluid Polishing을 이용한 커버글래스 측면 연마 조건 최적화에 관한 기초 연구)

  • Chung, Jae-Hwa;Kim, Byung-Chan;Hong, Kwang-Pyo;Cho, Myeong-Woo
    • Design & Manufacturing
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    • v.11 no.2
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    • pp.42-45
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    • 2017
  • Currently, the mobile device is required to be miniaturized and lightweight according to the needs of the consumer. For this purpose, each part is produced and assembled in units of modules. Accordingly, the display part is also composed of a cover glass, a touch screen, And it costs a large amount to replace the whole when it is damaged. Therefore, we propose a method to improve the durability of display part using ANOVA (Analysis of Variance) and MR fluid polishing. Before MR fluid polishing process, surface treatment was performed to obtain a polishable surface. A series of experiments were carried out to very fine surface roughness and to secure durability of cover glass. Polishing depth, feed rate, and abrasive size were selected to examine the MR fluid polishing results.

Analysis of residual stress of Nitinol by surface Polishing Method (표면 연마 방법에 따른 니티놀 잔류응력 분석)

  • Jeong, Ji-Seon;Hong, Kwang-Pyo;Kim, Woon-yong;Cho, Myeong-Woo
    • Design & Manufacturing
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    • v.11 no.2
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    • pp.51-56
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    • 2017
  • Nitinol, a shape memory alloy (SMA), is manufactured from titanium and nickel and it used in various fields such as electrical applications, micro sensors. It is also recommended as a material in medical for implant because it has excellent organic compatibility. Nitinol is intended to be inserted into the human body, products require a high-quality surface and low residual stress. To overcome this problems, explore electrolyte polishing (EP) is being explored that may be appropriate for use with nitinol. EP is a particularly useful machining method because, as a non contact machining method, it produces neither machining heat nor internal stress in the machined materials. Sandpaper polishing is also useful machining method because, as a contact machining method, it can easily good surface roughness in the machined materials. The electrolyte polishing (EP) process has an effect of improving the surface roughness as well as the film polishing process, but has a characteristic that the residual stress is hardly generated because the work hardened layer is not formed on the processed surface. The sandpaper polishing process has the effect of improving the surface roughness but the residual stress remains in the surface. We experimented with three conditions of polishing process. First condition is the conventional polishing. Second condition is the electrochemical polishing(EP). And Last condition is a mixing process with the conventional polishing and the EP. Surface roughness and residual stress of the nitinol before a polishing process were $0.474{\mu}mRa$, -45.38MPa. Surface roughness and residual stress of the nitinol after mixing process of the conventional polishing and the EP were $1.071{\mu}mRa$, -143.157MPa. Surface roughness and residual stress of the nitinol after conventional polishing were $0.385{\mu}mRa$ and -205.15MPa. Surface roughness and residual stress of sandpaper and EP nitinol were $1.071{\mu}mRa$, -143.157MPa. The result shows that the EP process is a residual stress free process that eliminates the residual stress on the surface while eliminating the deformed layer remaining on the surface through composite surface machining rather than single surface machining. The EP process can be used for biomaterials such as nitinol and be applied to polishing of wafers and various fields.

화학기계적 연마 가공에서의 윤활 특성 해석

  • 박상신;조철호;안유민
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 1998.10a
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    • pp.272-277
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    • 1998
  • Chemical-Mechanical Polishing (CMP) refers to a material removal process done by rubbing a work piece against a polishing pad under load in the presence of chemically active, abrasive containing slurry. CMP process is a combination of chemical dissolution and mechanical action. The mechanical action of CMP involves tribology. The liquid slurry is trapped between the wafer(work piece) and pad(tooling) forming a lubricating film. For the first step to understand material removal rate of the CMP process, the lubricational analyses were done with commercial 100mm diameter silicon wafers to get nominal clearance of the slurry film, roll and pitch angle at the steady state. For this purpose, we calculate slurry pressure, resultant forces and moments at the steady state in the range of typical industrial polishing conditions.

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A Study of Material Removal Characteristics by Friction Monitoring System of Sapphire Wafer in Single Side DMP (사파이어 웨이퍼 DMP에서 마찰력 모니터링을 통한 재료 제거 특성에 관한 연구)

  • Jo, Wonseok;Lee, Sangjik;Kim, Hyoungjae;Lee, Taekyung;Lee, Seongbeom
    • Tribology and Lubricants
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    • v.32 no.2
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    • pp.56-60
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    • 2016
  • Sapphire has a high hardness and strength and chemical stability as a superior material. It is used mainly as a material for a semiconductor as well as LED. Recently, the cover glass industry used by a sapphire is getting a lot of attention. The sapphire substrate is manufactured through ingot sawing, lapping, diamond mechanical polishing (DMP) and chemical mechanical polishing (CMP) process. DMP is an important process to ensure the surface quality of several nm for CMP process as well as to determine the final form accuracy of the substrate. In DMP process, the material removal is achieved by using the mechanical energy of the relative motion to each other in the state that the diamond slurry is disposed between the sapphire substrate and the polishing platen. The polishing platen is one of the most important factors that determine the material removal characteristics in DMP. Especially, it is known that the geometric characteristics of the polishing platen affects the material removal amount and its distribution. This paper investigated the material removal characteristics and the effects of the polishing platen groove in sapphire DMP. The experiments were preliminarily carried out to evaluate the sapphire material removal characteristics according to process parameters such as pressure, relative velocity and so on. In the experiment, the monitoring apparatus was applied to analyze process phenomena in accordance with the processing conditions. From the experimental results, the correlation was analyzed among process parameters, polishing phenomena and the material removal characteristics. The material removal equation based on phenomenological factors could be derived. And the experiment was followed to investigate the effects of platen groove on material removal characteristics.

Comparison of surface topography and roughness in different yttrium oxide compositions of dental zirconia after grinding and polishing

  • Shin, Hyun-Sub;Lee, Joon-Seok
    • The Journal of Advanced Prosthodontics
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    • v.13 no.4
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    • pp.258-267
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    • 2021
  • PURPOSE. The purpose of this study was to compare the surface roughness, phase transformation, and surface topography of dental zirconia with three different yttrium oxide compositions under same grinding and polishing conditions. MATERIALS AND METHODS. Three zirconia disks (IPS e.max ZirCAD LT, MT, MT multi, Ivoclar Vivadent AG, Schaan, Liechtenstein) were selected for experimental materials. Sixty-nine bar-shaped specimens were fabricated as 12.0 × 6.0 × 4.0 mm using a milling machine and glazing was conducted on 12.0 × 6.0 mm surface by same operator. With a custom polishing device, 12.0 × 6.0 mm surfaces were polished under same condition. Surface roughness (Ra[㎛]) was measured before grinding (C), after grinding (G), and at every 3 steps of polishing (P1, P2, P3). X-ray diffraction and FE-SEM observation was conducted before grinding, after grinding, and after fine polishing (P3). Statistical analysis of surface roughness was performed using Kruskal-Wallis test and Mann-Whitney-U test was used as a post hoc test (α = .05). RESULTS. There were no significant differences of surface roughness between LT, MT, and MM groups. In LT, MT, and MM groups, P3 groups showed significantly lower surface roughness than C groups. X-ray diffraction showed grinding and polishing didn't lead to phase transformation on zirconia surface. In FE-SEM images, growths in grain size of zirconia were observed as yttrium oxide composition increases. CONCLUSION. Polished zirconia surface showed clinically acceptable surface roughness, but difference in yttrium oxide composition had no significant influence on the surface roughness. Therefore, in clinical situation, zirconia polishing burs could be used regardless of yttrium oxide composition.

Surface Condition Monitoring in Magnetic Abrasive Polishing of NAK80 Using AE Sensor and Neural Network (AE 센서와 신경회로망을 이용한 NAK80 금형강의 자기연마 가공특성 모니터링)

  • Kim, Kwang-Heui;Shin, Chang-Min;Kim, Tae-Wan;Kwak, Jae-Seob
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.21 no.4
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    • pp.601-607
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    • 2012
  • The magnetic abrasive polishing (MAP), for online monitoring with AE sensor attachment, was performed in this study. To predict the surface roughness after the magnetic abrasive polishing of NAK80, the signal data acquired from the AE sensor were analyzed. A dimensionless coefficient, which consisted of average of AErms and standard deviation of AE signal, was defined as a characteristic of the MAP and a prediction model was obtained using least square method. A neural network, which had multiple input parameters from AE signals and polishing conditions, was applied for predicting the surface roughness. As a result of this study, it was seen that there was very close correlation between the AE signal and the surface roughness in the MAP. And then on-line prediction of the surface roughness after the MAP of the NAK80 was possible by the developed prediction model.