• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.46-49
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• 2003

Chemical mechanical polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5% hydrogen peroxide such as $Fe(NO_3)_3$, $H_2O_2$, and $KIO_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of $Al_3O_3$ particles in presence of surfactant stabilizing the slurry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.33-36
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• 2003

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina $(Al_2O_3)$ abrasive containing slurry with 5 % $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with 5 % $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1522-1527
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• 2004

In this paper, slurry fluid motion, abrasive particle motion, and effects of groove sizing on the pads are numerically investigated in the 2D geometry. Groove depth is optimized in order to maximized the abrasive effect. The simulation results are analyzed in terms of shear stress on pad, groove and wafer, streamline and velocity vector. The change of groove depth entails vortex pattern change, and consequently affects material removal rate. Numerical analysis is very helpful for disclosing polishing mechanism and local physics.

• Tribology and Lubricants
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• v.35 no.5
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• pp.274-285
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• 2019

Chemical mechanical polishing (CMP), which is a material removal process involving chemical surface reactions and mechanical abrasive action, is an essential manufacturing process for obtaining high-quality semiconductor surfaces with ultrahigh precision features. Recent rapid growth in the industries of digital devices and semiconductors has accelerated the demands for processing of various substrate and film materials. In addition, to solve many issues and challenges related to high integration such as micro-defects, non-uniformity, and post-process cleaning, it has become increasingly necessary to approach and understand the processing mechanisms for various substrate materials and abrasive particle behaviors from a tribological point of view. Based on these backgrounds, we review recent CMP R&D trends in this study. We examine experimental and analytical studies with a focus on substrate materials and abrasive particles. For the reduction of micro-scratch generation, understanding the correlation between friction and the generation mechanism by abrasive particle behaviors is critical. Furthermore, the contact stiffness at the wafer-particle (slurry)-pad interface should be carefully considered. Regarding substrate materials, recent research trends and technologies have been introduced that focus on sapphire (${\alpha}$-alumina, $Al_2O_3$), silicon carbide (SiC), and gallium nitride (GaN), which are used for organic light emitting devices. High-speed processing technology that does not generate surface defects should be developed for low-cost production of various substrates. For this purpose, effective methods for reducing and removing surface residues and deformed layers should be explored through tribological approaches. Finally, we present future challenges and issues related to the CMP process from a tribological perspective.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.45-48
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• 2003

The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on tungsten passivation layer in order to obtain higher removal rate (RR) and very low non-uniformity (NU%) during W-CMP process. In this paper, we investigated the effects of oxidizer on W-CMP process with three different kinds of oxidizers, such as $H_2O_2$, $Fe(NO_3)_3$, and $KIO_3$. In order to compare the removal rate and non-uniformity of three oxidizers, we used alumina-based slurry of pH 4. According to the CMP tests, three oxidizers showed different removal mechanism on tungsten surface. Also, the microstructures of surface layer by AFM image were greatly influenced by the slurry chemical, composition of oxidizers. The difference in removal rate and roughness of tungsten surface are believed to caused by modification in the mechanical behavior of $Al_2O_3$ abrasive particles in CMP slurry. Our stabilized slurries can be used a guideline and promising method for improved W-CMP process.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.443-444
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• 2002

The uniformity of field oxide is critical to isolation property of device in STI, so the control of field oxide thickness in STI-CMP becomes enormously important. The loss of field oxide in shallow trench isolation comes mainly from dishing and erosion in STI-CMP. In this paper, the effect of slurries on the dishing was investigated with both blanket and patterned wafers were selected to measure the removal rate, selectivity and dishing amount. Dishing was a strong function of pattern spacing and types of slurries. Dishing was significantly decreased with decreasing pattern spacing for both slurries. Significantly lower dishing with ceria based slurry than with silica based slurry were achieved when narrow pattern spacing were used. Possible dishing mechanism with two different slurries were discussed based on the observed experimental results.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.05a
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• pp.240-247
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• 2002

The rolling wear behavior of SM55C is investigated under lubrication. This is a comparative tribological behavior of heat treatment effect for SM55C. Rolling wear test method is used for Ball-on-disk type. Specimens can be classified into two main groups: as-annealing and non-annealing. As result of wear behavior, flanking initial time of non-annealing specimen keep at retard but it have not under high normal load. One of the notable features of annealing specimen is steady flanking initial time for a normal load in this experiment. Failure mechanism of SM55C is due to the fatigue wear such like flanking, pitting etc.. Flanking leads to abruptly fracture of worn surface. Fracture mechanism has a connection with normal load and polishing direction of specimens.

• Journal of the Korean Society of Safety
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• v.25 no.5
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• pp.1-6
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• 2010

When the ceramic material is being machined, micro crack and brittle fracture dominate the process of material removal. Generally, ceramics are very difficult-to-cut materials and machined using conventional method such as grinding and polishing. However, such processes are generally cost-expensive and have low material removal rate. Machinable ceramics used in this study contain BN powder to overcome these problem and for productivity elevation. This paper focuses on machinability evaluation during end mill process with CNC machining center in this study. Experiment for this purpose is performed for tool wear patterns and mechanism.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.5
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• pp.976-985
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• 2002

The purpose of this paper is that the roughness(Rrms = 31$\AA$, Rp-v = 270$\AA$) of ITO thin film deposited by sputtering method for OELD is improved to Rrms $\leq$ 10$\AA$, Rp-v $\leq$ 80$\AA$ by chemical mechanical polishing(CMP). First, ITO thin films are polished with a variety of consumables (Pads, Slurries) to choose proper some for the roughness improvement and the CMP mechanism of ITO thin films is demonstrated on the ground of the experiment results. Henceforth, the CMP characteristics (Removal rate, Non-uniformity) of chosen consumables are evaluated according to processing conditions (Polishing pressures, Table velocities) and suitable conditions for ITO film CMP are selected. Finally, the electrical and optical properties (Sheet resistance, Transmittance) of ITO thin films are investigated to verify whether or not ITO thin film are still suitable for OELD after polished.

• Korean Journal of Computational Design and Engineering
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• v.20 no.3
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• pp.312-319
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• 2015

The grinding and furbishing process as the finishing process for molds include the works such as the grinding, buffing, lapping and polishing among others. A finishing tool unit is applied to this finishing process for the burr, lapping, polishing and others of molds. A finishing tool unit can carry out the flexible machining, depending on the machining allowance for objects to be cut on the basis of the instrumental driving mechanism which enables the up, down, left and right floating, which is applied in link with the dedicated cutters and robot machining systems. This study selected the shape to increase the rotatory force of an impeller when air is discharged during the driving of a finishing tool unit, and reflected it to the impeller designing. In addition, the study analyzed each flow velocity and pressure distribution per air pressurization value and finally analyzed the rotating torque to suggest the optimal conditions in designing impellers.