• Geophysics and Geophysical Exploration
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• v.17 no.4
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• pp.209-215
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• 2014

In order to develop a new mineral exploration technique, a study was carried out about the potential mapping of Moisan area using SIP (Spectral Induced Polarization) data. The SIP inversion results were classified according to the geological regions, and the distribution characteristics of resistivity and phase values of SIP data were analyzed at the ore region. Based on the characteristics of SIP of ore bodies, we performed 3D potential mapping of Moisan area. The analyzed potential map was verified using that the locations and patterns of high potential regions of the results are well matched with those of the known ore bodies. If we get the higher spatial resolution SIP data, the potential mapping technique using SIP data can be effectively applied to the estimation of mining deposit.

• Korean Journal of Optics and Photonics
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• v.17 no.2
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• pp.181-185
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• 2006

A novel 60GHz optical carrier generator with a polarization domain-inverted structure is suggested and is demonstrated. The two arms of the Mach-Zehnder optical waveguide are periodically poled for quasi-phase velocity matching between the optical wave at 1550nm and the RF wave at 30 GHz. The center frequency of band-pass modulation and the 3 dB bandwidth of the fabricated modulator were measured to be 30.3 GHz and 5.1 GHz, respectively. Sub-carriers with the frequency difference of 60GHz waeregenerated under appropriate DC biac voltage application while the carrier was suppressed to lead to the power ratio between the modulated sub-carrier and the suppressed fundamental carrier of 28 dB, which proves that double sideband- suppressed carrier(DSB-SC) operation can be realized by the suggested single device.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.24-33
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• 2000

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET(Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. In our switching model, relative switched charge is 0.74 nC before fatigue, but after the progress of fatigue it reduces to 0.15 nC with the generation of oxygen vacancies. It indicates that the generation of oxygen vacancies strongly suppresses polarization reversal. $C-V_G\;and\;I_D-V_G$ curves in our MFSFET device model exhibit the memory window of 2 V and show the accumulation, the depletion and the inversion regions in capacitance characteristic clearly. The difference of saturation drain current of the device before fatigue in shown by the dual threshold voltages in $I_D-V_G$ curve as 6nA/$cm^2$ and decreases as much as 50% after fatigue. Decrease of the difference of saturation drain currents by fatigue implies that the accumulation of oxygen vacancies with the fatigue should be avoided in the device application. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.

• Geophysics and Geophysical Exploration
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• v.12 no.1
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• pp.33-40
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• 2009

In field surveys using the dipole-dipole electrical resistivity method, we often encounter negative apparent resistivity. The term 'negative apparent resistivity' refers to apparent resistivity values with the opposite sign to surrounding data in a pseudosection. Because these negative apparent resistivity values have been regarded as measurement errors, we have discarded the negative apparent resistivity data. Some people have even used negative apparent resistivity data in an inversion process, by taking absolute values of the data. Our field experiments lead us to believe that the main cause for negative apparent resistivity is neither measurement errors nor the influence of self potentials. Furthermore, we also believe that it is not caused by the effects of induced polarization. One possible cause for negative apparent resistivity is the subsurface geological structure. In this study, we provide some numerical examples showing that negative apparent resistivity can arise from geological structures. In numerical examples, we simulate field data using a 3D numerical modelling algorithm, and then extract 2D sections. Our numerical experiments demonstrate that the negative apparent resistivity can be caused by geological structures modelled by U-shaped and crescent-shaped conductive models. Negative apparent resistivity usually occurs when potentials increase with distance from the current electrodes. By plotting the voltage-electrode position curves, we could confirm that when the voltage curves intersect each other, negative apparent resistivity appears. These numerical examples suggest that when we observe negative apparent resistivity in field surveys, we should consider the possibility that the negative apparent resistivity has been caused by geological structure.

• Economic and Environmental Geology
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• v.44 no.3
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• pp.229-238
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• 2011

S-wave, which provides lithology and pore fluid information, plays a key role in estimating gas-hydrate saturation. In general, P- and S-wave velocities increase in the presence of gas-hydrate and the P-wave velocity decreases in the presence of free gas under the gas-hydrate layer. Whereas there are very small changes, even slightly increases, in the S-wave velocity in the free gas layer because S-wave is not affected by the pore fluid when propagating in the free gas layer. To verify those velocity properties of the BSR (bottom-simulating reflector) depth in the gas-hydrate prospect area in the Ulleung Basin, P- and S-wave velocity profiles were derived from multi-component ocean-bottom seismic data which were acquired by Korea Institute of Geoscience and Mineral Resources (KIGAM) in May 2009. OBS (ocean-bottom seismometer) hydrophone component data were modeled and inverted first through the traveltime inversion method to derive P-wave velocity and depth model of survey area. 2-D multichannel stacked data were incorporated as an initial model. Two horizontal geophone component data, then, were polarization filtered and rotated to make radial component section. Traveltimes of main S-wave events were picked and used for forward modeling incorporating Poisson's ratio. This modeling provides S-wave profiles and Poisson's ratio profiles at every OBS site. The results shows that P-wave velocities in most OBS sites decrease beneath the BSR, whereas S-wave velocities slightly increase. Consequently, Poisson's ratio decreased strongly beneath the BSR indicating the presence of a free gas layer under the BSR.