• Title/Summary/Keyword: Polarization reversal time

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Measuring electrical parameters of ferroelectric liquid crystals using universal current reversal method

  • Sood, N.;Khosla, S.;Singh, D.;Bawa, S.S.
    • Journal of Information Display
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    • v.12 no.3
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    • pp.129-134
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    • 2011
  • The universal current reversal method is used for the simultaneous measurement of response time (${\tau}$), azimuthal angle (${\varphi}_o$), spontaneous polarization ($P_S$), and rotational viscosity (${\gamma}_{\varphi}$) of two ferroelectric liquid crystals (FLCs). The application of AC field in FLCs results in reorientational current, which is further analyzed to obtain various parameters. The variation in the parameters with temperature follows the typical trend predicted by the theory. The theoretical curve fits well into the experimental data. Its comparison with traditional current reversal method is confirmed to address certain limitations of that method.

The rapid thermal annealing effects and its application to electron devices of Sol-Gel derived ferroelectric PZT thin films (졸-겔법으로 형성한 강유전체 PZT박막의 고온 단시간 열처리효과 및 전자 디바이스에의 응용)

  • 김광호
    • Electrical & Electronic Materials
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    • v.7 no.2
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    • pp.152-156
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    • 1994
  • The rapid thermal annealing effects of Sol-Gel derived ferroelectric PZT thin films were investigated. It was found that rapid thermal annealing(RTA) of spin coated thin films on silicon typically >$800^{\circ}C$ for about 1 min. was changed to the perovskite phase. Rapid thermally annealed films recorded maximum remanent polarization of about 5 .mu.C/cm$^{2}$, coercive field of around 30kV/cm. The switching time for polarization reversal was about 220ns. The films of RTA process showed smooth surface, and high breakdown voltages of over 1 MV/cm and resistivity of $1{\times}{10^12}$ .ohm.cm at 1 MV/cm. It was verified that the polarization reversal of the PZT film was varied partially with applying the multiple short pulse.

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Electrical properties of the PLZT thin film capacitors by the sol-gel method (Sol-gel법을 이용한 PLZT박막 커패시터의 전기적 특성)

  • 박준열;정장호;이성갑;이영희
    • Electrical & Electronic Materials
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    • v.9 no.7
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    • pp.668-673
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    • 1996
  • In this paper, (P $b_{1-x}$ L $a_{x}$)(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ (X=0-13[at%]) thin film were prepared by the Sol-Gel method, Multiple PLZT thin films were spin-coated on the Pt/Ti/ $SiO_{2}$Si substrate. The electrical properties of the films were investigated for varying the annealing temperature. In the PLZT(11/52/48) specimens, the dielectric ocnstant of 1236 and the polarization reversal time of 460[nm] were obtained and the breakdown of the film did not occur up to 1*10$^{10}$ cycles at the voltage of 7[V] by the bipolar acceleration. The remanent polarization and coercive field decreased with increasing the content of La in the range of 0-13[at%] and thin film of the PLZT(11/52/48) showed the value of 2.56[.mu.C/c $m^{2}$] and 21.1[kV/cm], respectively.ly.y.

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Evaluation of polarization and mobile charge in ferroelectric films using TVS(Triangular Voltage Sweep) method (삼각전압소인법을 이용한 강유전체 박막내에서의 분극 및 유동이온에 대한 평가)

  • 김용성;이남열;정순원;김진규;정상현;김광호;유병곤;이원재;유인구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.86-89
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    • 2000
  • The detection technique both the polarization and the mobile charge density at the same time in ferroelectric films on Si using TVS method have been proposed. This method yields a polarizable and an ionic displacement current peaks whose areas are proportional to the total polarization reversal charge and the total moble ionic space charge, respectively. The calculated polarization and the mobile charge density were 0.42 [$\mu$C/$\textrm{cm}^2$] and 5.5$\times$10$^{11}$ (ions/$\textrm{cm}^2$) in the SBT film of MFIS structure measured at 25$0^{\circ}C$, and 1.4 [$\mu$C/$\textrm{cm}^2$] in the LiNbO$_3$ film of MFS structure measured at 30$0^{\circ}C$, respectively.

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The Effect of NiO and $MnO_2$ Addition on the Dielectric Piezoelectric and Polarization-Reversal Properties of PLZT (NiO와 $MnO_2$ 의 첨가가 PLZT의 유전특성과 압전특성 및 분극반전특성에 미치는 효과)

  • 조경익;주웅길;고경신
    • Journal of the Korean Ceramic Society
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    • v.20 no.4
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    • pp.315-323
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    • 1983
  • Effect of NiO and $MnO_2$ addtivies on the dielectric piezoelectrics and polarization-reversal properties of $(Pb_{0.936} La_{0.064})$$(Zr_{0.60}Ti_{0.40})O_3$ ceramics have been investigated. The specimens were prepared by the mixed oxide techni-que and atmosphere sintering method. The room temperature X-ray diffraction studies show that perfect perovskite solution with tetragonal structure was obtained from PLZT and its additives. The dielectric constant and dissipation factor decreased with the addition of both NiO and $MnO_2$ The Curie of Curie temperature was not observed but they displayed broadened maxima. The planar coupling factor was improved by addition of NiO and also increased with increasing sintering time carried out at 105$0^{\circ}C$ Addition of $MnO_2$ yielded a markedly high mechanical quality factor. The space-charge field decreased with the addition of NiO but increased with the addition of $MnO_2$ The planar coupling factor and space-charge field showed same dependence on the additivies. The tetragonality Curie temperature and planar coupling factor of $(Pb_{0.936} La_{0.064})$$(Zr_{0.60}Ti_{0.40})O_3$ were higher than those of $(Pb_{0.936} La_{0.064})$$(Zr_{0.568}NU_{0.032}Ti_{0.40})_{0.984}O_3$ but the grain size lattic parameter dielectric constant dissipation factor mechanical quality factor and space-charge field of the former were lower than those of the latter.

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