• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.10
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• pp.564-569
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• 2000

This paper analyzed single AlGaAs/GaAa heterojunction energy band structures by solving Schr dinger's equation and Poisson's equation self-consistently. Four different concentrations, positively ionized donors, holes in the valence band, free electrons in the conduction band and 2DEG are taken into account for the whole system. 2DEG from both of the structures are obtained and compared with the date available in the literatures. Differential capacitances are also calculated from the concentration profiles obtained to prove the validity of the single AlGaAs/GaAs system. Finally, theoretical predictions for both of 2DEGs and the capacitances show good agreement with the experimental data referred in this study. It has only an error of les than 10 percent.

• Journal of the Chungcheong Mathematical Society
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• v.35 no.2
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• pp.177-196
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• 2022

The Elzaki Transform method is fuzzified to fuzzy Elzaki Transform by Rehab Ali Khudair. In this article, we propose a Double fuzzy Elzaki transform (DFET) method to solving fuzzy partial differential equations (FPDEs) and we prove some properties and theorems of DFET, fundamental results of DFET for fuzzy partial derivatives of the n^th order, construct the Procedure to find the solution of FPDEs by DFET, provide duality relation of Double Fuzzy Laplace Transform (DFLT) and Double Fuzzy Sumudu Transform(DFST) with proposed Transform. Also we solve the Fuzzy Poisson's equation and fuzzy Telegraph equation to show the DFET method is a powerful mathematical tool for solving FPDEs analytically.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.134-148
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• 1994

A full two-dimensional MOSFET simulator utilizing the Mixed Particle Monte Carlo method is introduced. Particle simulation for both electrons and holes are self-consistently coupled with Poisson 's equation. To demonstrate the performance of the simulator, steady state and transient state solutions of the terminal characteristics and the internal physical quantities are obtained for 0.25$\mu$m MOSFETs with three different structures` conventional single drain, LDD and GOLD MOSFET structures.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1986.04a
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• pp.206-210
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• 1986

Double Ion Implantation methods are used to improve the stiffness os carrier profiles, and then the analytical solutions to Poisson`s equation are derived with summation of each carrier profile. Numerical analyses are done using profer boudary conditions and the results show that the improvement of voltage-dependent-capacitance ratio (C(!)/C(25)) is obtained up to B.6. The third ion implantation is for the enhancement of the Schottky barrier height.

• Proceedings of the Earthquake Engineering Society of Korea Conference
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• 2006.03a
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• pp.440-444
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• 2006

In this paper an analytical study is carried out to improve the capacity of absorbing boundary using dashpot, one of the most widely used absorbing boundaries in FEM. Using harmonic plane wave equation, absorbing boundary condition is modified to maximize its capacity according to the incident angle. Validity of the modified absorbing boundary conditions is investigated by adopting the solution of Miller-Pursey which is the solution for the wave propagation in semi-infinite elastic media, and the absorption ratio is calculated according to various Poisson's ratios.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.693-695
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• 2012

This paper have presented the breakdown voltage for double gate(DG) MOSFET. The analytical solution of Poisson's equation and Fulop's breakdown condition have been used to analyze for breakdown voltage. The double gate(DG) MOSFET as the device to be able to use until nano scale has the adventage to reduce the short channel effects. But we need the study for the breakdown voltage of DGMOSFET since the decrease of the breakdown voltage is unavoidable. To approximate with experimental values, we have used the Gaussian function as charge distribution for Poisson's equation, and the change of breakdown voltage has been observed for device geometry. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. As a result to observe the breakdown voltage, the smaller channel length and the higher doping concentration become, the smaller the breakdown voltage becomes. Also we have observed the change od the breakdown voltage for gate oxide thickness and channel thickness.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.681-684
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• 2011

In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The subthreshold swing has been investigated according to projected range and standard projected deviation, variables of Gaussian function. The analytical potential distribution model has been derived from Poisson's equation, and subthreshold swing has been obtained from this model. The subthreshold swing has been defined as the derivative of gate voltage to drain current and is theoretically minimum of 60mS/dec, and very important factor in digital application. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the subthreshold swings have been analyzed according to the shape of Gaussian function.

• Structural Engineering and Mechanics
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• v.70 no.6
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• pp.737-750
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• 2019

This paper investigates the static and dynamic behaviors of imperfect single walled carbon nanotube (SWCNT) modeled as a beam structure by using energy-equivalent model (EEM), for the first time. Based on EEM Young's modulus and Poisson's ratio for zigzag (n, 0), and armchair (n, n) carbon nanotubes (CNTs) are presented as functions of orientation and force constants. Nonlinear Euler-Bernoulli assumptions are proposed considering mid-plane stretching to exhibit a large deformation and a small strain. To simulate the interaction of CNTs with the surrounding elastic medium, nonlinear elastic foundation with cubic nonlinearity and shearing layer are employed. The equation governed the motion of curved CNTs is a nonlinear integropartial-differential equation. It is derived in terms of only the lateral displacement. The nonlinear integro-differential equation that governs the buckling of CNT is numerically solved using the differential integral quadrature method (DIQM) and Newton's method. The linear vibration problem around the static configurations is discretized using DIQM and then is solved as a linear eigenvalue problem. Numerical results are depicted to illustrate the influence of chirality angle and imperfection amplitude on static response, buckling load and dynamic behaviors of armchair and zigzag CNTs. Both, clamped-clamped (C-C) and simply supported (SS-SS) boundary conditions are examined. This model is helpful especially in mechanical design of NEMS manufactured from CNTs.

• Smart Structures and Systems
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• v.9 no.5
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• pp.427-439
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• 2012

The present paper deals with the analytical solution of a functionally graded piezoelectric (FGP) cylinder in the magnetic field under mechanical, thermal and electrical loads. All mechanical, thermal and electrical properties except Poisson ratio can be varied continuously and gradually along the thickness direction of the cylinder based on a power function. The cylinder is assumed to be axisymmetric. Steady state heat transfer equation is solved by considering the appropriate boundary conditions. Using Maxwell electro dynamic equation and assumed magnetic field along the axis of the cylinder, Lorentz's force due to magnetic field is evaluated for non homogenous state. This force can be employed as a body force in the equilibrium equation. Equilibrium and Maxwell equations are two fundamental equations for analysis of the problem. Comprehensive solution of Maxwell equation is considered in the present paper for general states of non homogeneity. Solution of governing equations may be obtained using solution of the characteristic equation of the system. Achieved results indicate that with increasing the non homogenous index, different mechanical and electrical components present different behaviors along the thickness direction. FGP can control the distribution of the mechanical and electrical components in various structures with good precision. For intelligent properties of functionally graded piezoelectric materials, these materials can be used as an actuator, sensor or a component of piezo motor in electromechanical systems.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.878-881
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• 2011

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET to be next-generation devices. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. DIBL has been investigated according to projected range and standard projected deviation as variables of Gaussian function, and channel thickness and channel doping intensity as device parameter. Since the validity of this analytical potential distribution model derived from Poisson's equation has already been proved in previous papers, DIBL has been analyzed using this model.