• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권10호
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• pp.564-569
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• 2000

This paper analyzed single AlGaAs/GaAa heterojunction energy band structures by solving Schr dinger's equation and Poisson's equation self-consistently. Four different concentrations, positively ionized donors, holes in the valence band, free electrons in the conduction band and 2DEG are taken into account for the whole system. 2DEG from both of the structures are obtained and compared with the date available in the literatures. Differential capacitances are also calculated from the concentration profiles obtained to prove the validity of the single AlGaAs/GaAs system. Finally, theoretical predictions for both of 2DEGs and the capacitances show good agreement with the experimental data referred in this study. It has only an error of les than 10 percent.

• 충청수학회지
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• 제35권2호
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• pp.177-196
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• 2022

The Elzaki Transform method is fuzzified to fuzzy Elzaki Transform by Rehab Ali Khudair. In this article, we propose a Double fuzzy Elzaki transform (DFET) method to solving fuzzy partial differential equations (FPDEs) and we prove some properties and theorems of DFET, fundamental results of DFET for fuzzy partial derivatives of the n^th order, construct the Procedure to find the solution of FPDEs by DFET, provide duality relation of Double Fuzzy Laplace Transform (DFLT) and Double Fuzzy Sumudu Transform(DFST) with proposed Transform. Also we solve the Fuzzy Poisson's equation and fuzzy Telegraph equation to show the DFET method is a powerful mathematical tool for solving FPDEs analytically.

• 전자공학회논문지A
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• 제31A권5호
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• pp.134-148
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• 1994

A full two-dimensional MOSFET simulator utilizing the Mixed Particle Monte Carlo method is introduced. Particle simulation for both electrons and holes are self-consistently coupled with Poisson 's equation. To demonstrate the performance of the simulator, steady state and transient state solutions of the terminal characteristics and the internal physical quantities are obtained for 0.25$\mu$m MOSFETs with three different structures` conventional single drain, LDD and GOLD MOSFET structures.

• 한국통신학회:학술대회논문집
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• 한국통신학회 1986년도 춘계학술발표회 논문집
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• pp.206-210
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• 1986

Double Ion Implantation methods are used to improve the stiffness os carrier profiles, and then the analytical solutions to Poisson`s equation are derived with summation of each carrier profile. Numerical analyses are done using profer boudary conditions and the results show that the improvement of voltage-dependent-capacitance ratio (C(!)/C(25)) is obtained up to B.6. The third ion implantation is for the enhancement of the Schottky barrier height.

• 한국지진공학회:학술대회논문집
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• 한국지진공학회 2006년도 학술발표회 논문집
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• pp.440-444
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• 2006

In this paper an analytical study is carried out to improve the capacity of absorbing boundary using dashpot, one of the most widely used absorbing boundaries in FEM. Using harmonic plane wave equation, absorbing boundary condition is modified to maximize its capacity according to the incident angle. Validity of the modified absorbing boundary conditions is investigated by adopting the solution of Miller-Pursey which is the solution for the wave propagation in semi-infinite elastic media, and the absorption ratio is calculated according to various Poisson's ratios.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 춘계학술대회
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• pp.693-695
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• 2012

본 연구에서는 DGMOSFET의 항복전압에 대하여 고찰할 것이다. 이를 위하여 포아송방정식의 분석학적 해를 이용하였으며 Fulop의 항복전압 조건을 사용하였다. DGMOSFET는 게이트길이가 나노단위까지 사용가능한 소자로서 단채널효과를 감소시킬 수 있다는 장점이 있다. 그러나 단채널에서 나타나는 항복전압의 감소는 피할 수 없으므로 이에 대한 연구가 필요하다. 포아송방정식을 풀 때 사용하는 전하분포함수에 가우시안 함수를 적용함으로써 보다 실험값에 가깝게 해석하였으며 이때 이중게이트 MOSFET의 소자크기에 따라 항복전압의 변화를 관찰하였다. 본 연구의 전위모델에 대한 타당성은 이미 기존에 발표된 논문에서 입증하였으며 본 연구에서는 이 모델을 이용하여 항복전압을 분석할 것이다. DGMOSFET의 항복전압을 관찰한 결과, 채널길이가 감소할수록 그리고 도핑농도가 증가할수록 항복전압이 감소하는 것으로 나타났다. 또한 게이트산화막두께 및 채널두께에 따라서 항복전압의 변화가 관찰되었다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2011년도 춘계학술대회
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• pp.681-684
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• 2011

본 연구에서는 가우스 함수를 이용한 포아송방정식으로부터 DGMOSFET에서 채널내 전위와 전하분포의 관계를 유도하고자 한다. 이때 가우스 함수의 변수인 이온주입범위 및 분포편차에 대하여 문턱전압이하 스윙의 변화를 관찰하고자 한다. 포아송방정식으로부터 해석학적 전위분포 모델을 구하였으며 이를 이용하여 문턱전압이하 스윙값을 구하였다. 문턱전압이하 스윙은 게이트전압에 대한 드레인전류의 변화를 나타내고 이론적으론 최소값 60mV/dec을 나타내며 디지털소자응용에 매우 중요한 요소이다. 본 연구의 모델이 타당하다는 것을 입증하기 위하여 포텐셜 분포값을 수치해석학적 값과 비교하였다. 결과적으로 본 연구에서 제시한 포텐셜모델이 수치해석학적 시뮬레이션모델과 매우 잘 일치하였으며 가우스 함수의 형태에 따라 문턱전압이하 스윙을 분석하였다.

• Structural Engineering and Mechanics
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• 제70권6호
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• pp.737-750
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• 2019

This paper investigates the static and dynamic behaviors of imperfect single walled carbon nanotube (SWCNT) modeled as a beam structure by using energy-equivalent model (EEM), for the first time. Based on EEM Young's modulus and Poisson's ratio for zigzag (n, 0), and armchair (n, n) carbon nanotubes (CNTs) are presented as functions of orientation and force constants. Nonlinear Euler-Bernoulli assumptions are proposed considering mid-plane stretching to exhibit a large deformation and a small strain. To simulate the interaction of CNTs with the surrounding elastic medium, nonlinear elastic foundation with cubic nonlinearity and shearing layer are employed. The equation governed the motion of curved CNTs is a nonlinear integropartial-differential equation. It is derived in terms of only the lateral displacement. The nonlinear integro-differential equation that governs the buckling of CNT is numerically solved using the differential integral quadrature method (DIQM) and Newton's method. The linear vibration problem around the static configurations is discretized using DIQM and then is solved as a linear eigenvalue problem. Numerical results are depicted to illustrate the influence of chirality angle and imperfection amplitude on static response, buckling load and dynamic behaviors of armchair and zigzag CNTs. Both, clamped-clamped (C-C) and simply supported (SS-SS) boundary conditions are examined. This model is helpful especially in mechanical design of NEMS manufactured from CNTs.

• Smart Structures and Systems
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• 제9권5호
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• pp.427-439
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• 2012

The present paper deals with the analytical solution of a functionally graded piezoelectric (FGP) cylinder in the magnetic field under mechanical, thermal and electrical loads. All mechanical, thermal and electrical properties except Poisson ratio can be varied continuously and gradually along the thickness direction of the cylinder based on a power function. The cylinder is assumed to be axisymmetric. Steady state heat transfer equation is solved by considering the appropriate boundary conditions. Using Maxwell electro dynamic equation and assumed magnetic field along the axis of the cylinder, Lorentz's force due to magnetic field is evaluated for non homogenous state. This force can be employed as a body force in the equilibrium equation. Equilibrium and Maxwell equations are two fundamental equations for analysis of the problem. Comprehensive solution of Maxwell equation is considered in the present paper for general states of non homogeneity. Solution of governing equations may be obtained using solution of the characteristic equation of the system. Achieved results indicate that with increasing the non homogenous index, different mechanical and electrical components present different behaviors along the thickness direction. FGP can control the distribution of the mechanical and electrical components in various structures with good precision. For intelligent properties of functionally graded piezoelectric materials, these materials can be used as an actuator, sensor or a component of piezo motor in electromechanical systems.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2011년도 추계학술대회
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• pp.878-881
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• 2011

본 연구에서는 차세대 나노소자인 DGMOSFET에서 발생하는 단채널효과 중 하나인 드레인유기 장벽 감소(Drain Induced Barrier Lowering; DIBL)에 대하여 분석하고자 한다. 포아송방정식을 풀어 전위분포에 대한 분석학적 해를 구할 때 전하분포함수에 대하여 가우시안 함수를 사용함으로써 보다 실험값에 가깝게 해석하였으며 이때 가우시안 함수의 변수인 이온주입범위 및 분포편차 그리고 소자 파라미터인 채널의 두께, 도핑강도 등에 대하여 드레인유기장벽감소의 변화를 관찰하고자 한다. 본 연구의 모델에 대한 타당성은 이미 기존에 발표된 논문에서 입증하였으므로 본 연구에서는 이 모델을 이용하여 드레인유기장벽감소에 대하여 분석할 것이다.