• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05c
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• pp.189-192
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• 2001

In this paper, an novel optical measuring system based on the electro-optic effect has been proposed and realized using Pockels cell with a view to detecting partial discharge taking place at the needle plane electrode. This system has the following advantages ; nonmetallic probe sensor, immune to external EMI noise and broad band response of the Pockels cell from DC to GHz. This system is constructed by He-Ne laser, Mach-Zehnder interferometer with Pockels sensor, balanced photo receiver, data acquisition board and PC. The response characteristics of the developed proto type sensor are examined for AC and corona discharge.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.6
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• pp.240-245
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• 2002

In this paper, a novel optical measuring system for the measurement of nonuniform electric field was proposed. The electric field distorted by the discharges was detected through proposed optical measuring system based on the Pockets effect and Mach-Zehnder interferometer. In order to produce distorted electric field, corona discharge was generated from needle-plane electrode in air and detected by optical measuring system. This optical measuring system is constructed by He-Ne laser, single mode optical fiber, $2{\times}2$ 50/50 beam splitter, $LiNbO_3$ Pockets cell, photo detector and PC. In this system, output signal of Pockels sensor is measured by digital oscilloscope and transferred to the PC for recording and statistical processing. Through this paper, a promising possibilities of proto-type optical measuring system were evinced.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2116-2118
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• 2000

In the technique of Q-switching, very fast electronically controlled optical shutters can be made by using the electro-optic effect in crystals or liquids. The driver for the Pockels cell must be a high-speed, high-voltage switch which also must deliver a sizeable current. Common switching techniques include the use of vacuum tubes, cold cathode tubes, thyratrons, SCRs, and avalanche transistors. Semiconductor devices such as SCRs, avalanche transistors, and MOSFETs have been successfully employed to drive Pockels cell Q-switch. In this study, a simple driver for the Pockels cell Q-switch was developed by using SCRs, pulse transformer and TTL ICs. The Pockels cell Q-switch which was operated by this driver was employed in pulsed Nd:YAG laser system to investigate the operating characteristics of this Q-switch. And we have investigated the output characteristics of this Q-switch as a function of the Q-switch delay time to Xe flashlamp current on.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.846-849
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• 1991

This paper reports the principle, system confiquration, test results of optical voltage sensor using quartz pockels cell. The Pockels effect of quartz material is used for designing optical voltage sensor. The quarts material has very high half-wave voltage, so, it can be applied to measure high voltage level. Experimental results show that the optical voltage sensor has excellent linear characteristics within the applied AC voltage of 1200V.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1561-1563
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• 2001

In this paper, an novel optical measuring system based on the electro-optic effect has been proposed and realized using Pockels cell with a view to detecting partial discharge taking place at the needle plane electrode. This system has the following advantages ; nonmetallic probe sensor, immune to external EMI noise and broad band response of the Pockels cell from DC to GHz. And also it is constructed by He-Ne laser, optical fiber, $LiNbO_3$ Pockels cell, photo detector, grin lens, oscilloscope and PC. The characteristics of the developed prototype sensor are investigated under AC and corona discharges.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.557-560
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• 1989

For the purpose of increasing supply reliabiity in power line, high reliable voltage and current sensors must be needed. This paper describes the principle and result of the only optical voltage sensor based on BSO pockels cell.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.8
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• pp.688-693
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• 2000

In this paper an optical voltage sensor and an optical current sensor which can be used for the measurement of impulse voltage and current are implemented. BSO single crystal is utilized as a voltage sensor(Pockels effect cell). An rare earth doped YIG is used as a current sensor(Faraday effect cell). A new signal processing technique is adopted not only to avoid the influences o external optical fiber pertubations of transmitting optical fiber but also to improves the frequency response characteristics of the fiber-optic voltage and current sensors. Experimental results show that optical voltage sensor has maximum 2.5% error within the voltage range from 0V to 500V. and optical current sensor has maximum 2.5% error within the current range and that of optical current sensor is about 1.5% within temperature range from -2$0^{\circ}C$ to 6$0^{\circ}C$. The proposed optical sensors have good frequency response characteristics within the frequency range from DC to 10MHz.

• 전기의세계
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• v.29 no.5
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• pp.321-328
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• 1980

The Q-switching oscillator of TE $M_{00}$ mode was constructed in order to improve the properties of energy focusing and amplification, and prevent laser materials from breakdown. The Q-switching was done by means of electro-optical effect using Glan prism and KDP Pockels cell. Sharp laser pulse of risetime-1 ns and variable pulse width 2-10 ns was obtained from Q-switching laser pulse by PTM method using a laser triggered spark gap (LTSG), Glan prism and Pockels cell. A single ultra-short pulse (picosec order in pulse width) was obtained from mode-locked pulse train in combination of a mode-locked oscillator using saturable dye cell with pulse shaping system using PTM method.d.

• The Korean Journal of Ceramics
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• v.5 no.4
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• pp.409-413
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• 1999

A two-beam polarization (TBP) interfermeter with a reflection configuration for measuring the linear electroptic coefficient is described and investigated experimentally and theoretically. It is shown that a TBP interferometer can be used for measuring the Pockels coefficient of thin film with a strong Fabry-Perot effect. The TBP interferometer technique is used to measure the effective differential linear electro-optic coefficient $re=r_{33}-(n_0/n_0)^3r_{13}$of lead zirconate titanate (PZT) thin film. The results are in agreement with known data.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1273-1274
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• 2007

In this paper, a Optical Voltage Transformer has been designed and fabricated to improve temperature stability caused by materials properties and insulation in measuring system, using single crystal $Bi_{12}SiO_{20}$ as Pockels effect cells for Gas Insulated Switchgear[GIS] System. LD[wavelength: 850nm] was used as optical source, InGaAs as optical detector to measure optical power, Polarizing Beam Splitter as Polarizer and Analyzer, and Multi-mode Optical-fiber[62.5/$125{\mu}m$] as Light transmission line. OPT was assembled in order to pockels effect, and adopted direct electric field type. The linearity of OPT maintains variation for applied voltage range from 100V - 3000V during the test of electric property, As the temperature was changed from $25^{\circ}C$ to $60^{\circ}C$. the result of this study shows that characteristics of OPT are good, and it can be reflected for practical optical sensors in GIS system.