• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.46-52
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• 2003

In this paper, we fabricated PRT(platinum resistance thermometers) with the trimming technology using high fine laser system. U. V.(wavelength： 355nm) laser was mainly used for adjusting Pt thin films resistors to 100Ω at 0$^{\circ}C$. Internationally, the accepted A-class tolerance of temperature sensor is ${\pm}$0.06Ω at 0$^{\circ}C$. according to DIN EN 60751. The width of trimmed lines was about 10$\mu\textrm{m}$ and the best trimming conditions of Pt thin films were power : 37mW, frequency : 200Hz and bite size：1.5$\mu\textrm{m}$. And 96 resistors, fabricated by photolithography and etching process, have 79∼90Ω and 91∼102Ω as the proportion of 45.7% and 57.3%, respectively. As result of sitting Pt thin films resistors to the target value(109.73Ω at 25$^{\circ}C$), 82.3% of all resistors had the tolerance within ${\pm}$0.03Ω and the others(17.7％) were within ${\pm}$0.06Ω of A-class tolerance. The PRTs which wore fabricated in this research had excellent characteristics as follows； high accuracy, international standard TCR(temperature coefficient of resistance) value, long-term stability, wide temperature range, good linearity and repeatability, rapid response time, etc.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.369-369
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• 2007

ZnO film has been investigated during several decades because it has excellent optical property like a transmittance among the range of visible light for using transparent conducting oxide (TCO) films. But ZnO film has not enough conductivity for applying to TCO devices. Therefore we synthesized platinum nanoparticles and they incorporated into ZnO due to improve the electrical property of ZnO film by sol-gel synthesis method. Also, we fabricated photosensitive ZnO thin film containing Pt nanoparticles by sol-gel process and spin-coating for using photochemical solution deposition. Photosensitive ZnO film could carry out the direct-pattern which allow the etching process to be convenient. The optical and electrical properties of ZnO film with or without various atomic percent of Pt nanoparticles annealed at various temperatures were investigated by using UV-Vis spectroscopy and 4-point probe method, respectively. We characterized the ZnO thin film containing Pt nanoparticles using X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.67-71
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• 2014

An attempt to grow high quality GaN on silicon substrate using metal organic chemical vapor deposition (MOCVD), herein GaN epitaxial layers were grown on various Si(111) substrates. Thin Platinum layer was deposited on Si(111) substrate using sputtering, followed by thermal annealing to form Pt nano-clusters which act as masking layer during dry-etched with inductively coupled plasma-reactive ion etching to generate nano-patterned Si(111) substrate. In addition, micro-patterned Si(111) substrate with circle shape was also fabricated by using conventional photo-lithography technique. GaN epitaxial layers were subsequently grown on micro-, nano-patterned and conventional Si (111) substrate under identical growth conditions for comparison. The GaN layer grown on nano-patterned Si (111) substrate shows the lowest crack density with mirror-like surface morphology. The FWHM values of XRD rocking curve measured from symmetry (002) and asymmetry (102) planes are 576 arcsec and 828 arcsec, respectively. To corroborate an enhancement of the growth quality, the FWHM value achieved from the photoluminescence spectra also shows the lowest value (46.5 meV) as compare to other grown samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.504-504
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• 2011

최근 디지털 프린팅 기술의 핵심기술로 떠오르고 있는 잉크젯 프린팅 기술은 최근 기존의 문서인쇄 뿐 아니라, 직물 인쇄, 태양전지 등의 다양한 반도체 소자 제조에 널리 활용되고 있으며, 점차 그 응용 분야를 넓혀가고 있다. 특히 thermal 방식의 잉크젯 피린팅 기술은 etching, thin film process, lithography등의 반도체 공정 기술을 이용하여 제작할 수 있기 때문에, 현재 잉크젯 프린팅 기술은 대부분 thermal 방식을 체택하고 있다. 이러한 thermal 잉크젯 프린팅 방법에서는 잉크를 토출시키기 위하여, 전기적 에너지를 열에너지로 전환하는 전자저항막층이 필수적으로 필요하게 되는데, 이러한 전자저항막층은 수백도가 넘는 고온 및 잉크와 접촉으로 인한 부식 및 산화 문제가 발생할 수 있는 열악한 환경에서 사용되므로, Ta, SiN과 같은 보호층을 필수적으로 필요로 한다. 그러나 최근 잉크젯 프린터의 고해상도 고속화, 대면적 인쇄성 등과 같은 다양한 요구 증가에 따라, 잉크젯 프린터의 저전력 구동이 이슈로 떠올라 열효율에 방해가 되는 보호층을 제거할 필요성이 제기되고 있다. 지금까지는 Poly-Si, $HfB_2$, TiN, TaAl, TaN _0.8 등의 물질들이 잉크젯 프린터용 전자저항막 물질로 연구되거나 실제로 사용되어져 왔으나, 이러한 물질들을 보호층을 제거하는 경우 쉽게 산화되거나, 부식되는 문제점을 가지고 있다. 따라서, 기존 전자저항막의 기능을 만족시키면서, 산화나 부식에 대한 강한 내성을 가져 보호층을 제거하더라도 안정적으로 구동이 가능한 하이브리드 기능성(히터 + 보호층)을 가지는 잉크젯 프린터용 전자저항막 물질의 개발이 시급한 실정이다. 본 연구에서는 자기조립특성을 가져 정밀제어가 가능한 원자층증착법(Atomic Layer Deposition)을 이용하여 원자/나노 단위의 미세 구조 컨트롤을 통해 내열 내산화 내부식성 저온도저항계수를 동시에 가지는 다기능성 전자저항막을 설계 및 개발하고자 하였다. 전자저항막 개발을 위하여 우수한 내부식 내산화성을 가지고 결정립 크기에 따른 온도저항계수 조절이 가능한 platinum group metal들과 전기 저항 및 내열성 향상을 위한 물질의 복합구조막을 원자증증착법으로 증착하였다. 또한, 전자저항막 증착시 미세구조와 공정 변수가 내부식성, 내산화성, 그리고 온도저항계수에 미치는 영향을 체계적으로 연구하여, proto-type의 inkjet printhead를 구현하였다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.153-153
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• 2016

Aluminum alloys have poor corrosion resistance compared to the pure aluminum due to the additive elements. Thus, anodizing technology artificially generating thick oxide films are widely applied nowadays in order to improve corrosion resistance. Anodizing is one of the surface modification techniques, which is commercially applicable to a large surface at a low price. However, most studies up to now have focused on its commercialization with hardly any research on the assessment and improvement of the physical characteristics of the anodized films. Therefore, this study aims to select the optimum temperature of sulfuric electrolyte to perform excellent corrosion resistance in the harsh marine environment through electrochemical experiment in the sea water upon generating porous films by variating the temperatures of sulfuric electrolyte. To fabricate uniform porous film of 5083 aluminum alloy, we conducted electro-polishing under the 25 V at $5^{\circ}C$ condition for three minutes using mixed solution of ethanol (95 %) and perchloric (70 %) acid with volume ratio of 4:1. Afterward, the first step surface modification was performed using sulfuric acid as an electrolyte where the electrolyte concentration was maintained at 10 vol.% by using a jacketed beaker. For anode, 5083 aluminum alloy with thickness of 5 mm and size of $2cm{\times}2cm$ was used, while platinum electrode was used for cathode. The distance between the two was maintained at 3 cm. Afterward, the irregular oxide film that was created in the first step surface modification was removed. For the second step surface modification process (identical to the step 1), etching was performed using mixture of chromic acid (1.8 wt.%) and phosphoric acid (6 wt.%) at $60^{\circ}C$ temperature for 30 minutes. Anodic polarization test was performed at scan rate of 2 mV/s up to +3.0 V vs open circuit potential in natural seawater. Surface morphology was compared using 3D analysis microscope to observe the damage behavior. As a result, the case of surface modification presented a significantly lower corrosion current density than that without modification, indicating excellent corrosion resistance.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.141-157
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• 1995

Single crystals of TeO2 with large diameter were grown by Czochralski technique with auto-diameter control system. The ratio of crystal to crucible was 60-70%. The effect of critical pulling and rotation rate on the crystal quality was studied. Optimum growth parameters for high quality crystal pulling rate was less than 1.2 mm/hr. The solid-liquid interface was convex at the rotation rate of 10-23 rpm and concave at the rotation rate of more than 25 rpm, depending on the size of crystal and crucible. The platinum concentration in the melts is one of the main factors of the constitutional supercooling and thus the bubble entrapment in the growing crystal. Growth axis was confirmed to {110} direction during the whole growth procedure. Infrared spectrometric study and dislocation density measurment by chemical etching method on the grown crystal were performed. Finally, the reasons of cooperation of striations, inclusions, and optical inhomogeneities were discussed.