• 한국전기전자재료학회논문지
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• 제11권8호
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• pp.658-663
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• 1998

Ferrite plating enables were grown by ferrite by plating method in solution at low temperature(<10$0^{\circ}C$). This faciltates the fabrication of new ferrite thin film devices using non- heat-resistant materials(plastic, GaAs ect) as substrates. Combining the ferrite plating with sonochemistry, application of power ultrasonic waves to stimulate chemical reactions, the crystallinity and qualities of films were improved. Modifying the reactions cell and plating conditions further improved the film quality.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.444-445
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• 2009

The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposit the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 16.446 % on $0.2\sim0.6\;{\Omega}{\cdot}cm$, $20\;\times\;20\;mm^2$, CZ(Czochralski) wafer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.347.1-347.1
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• 2016

Screen printing is commonly used to form the electrode for crystalline silicon solar cells. However, it has caused high resistance and low aspect ratio, resulting in decrease of conversion efficiency. Accordingly, Ni/Cu/Ag plating method could be applied for crystalline silicon solar cells to reduce contact resistance. For Ni/Cu/Ag plating, laser ablation process is required to remove anti-reflection layers prior to the plating process, but laser ablation results in surface damage and then decrease of open-circuit voltage and cell efficiency. Another issue with plating process is ghost plating. Ghost plating occurred in the non-metallized region, resulting from pin-hole in anti-reflection layer. In this paper, we investigated the effect of Ni/Cu/Ag plating on the electrical properties, compared to screen printing method. In addition, phosphoric acid layer was spin-coated prior to laser ablation to minimize emitter damage by the laser. Phosphorous elements in phosphoric acid generated selective emitter throughout emitter layer during laser process. Then, KOH treatment was applied to remove surface damage by laser. At this step, amorphous silicon formed by laser ablation was recrystallized during firing process and remaining of amorphous silicon was removed by KOH treatment. As a result, electrical properties as Jsc, FF and efficiency were improved, but Voc was lower than screen printed solar cells because Voc was decreased due to surface damage by laser process. Accordingly, we expect that efficiency of solar cells could be improved by optimization of the process to remove surface damage.

• 한국표면공학회지
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• 제40권3호
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• pp.131-137
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• 2007

The typical MCFC (molten carbonate fuel cell) anode is made of Ni-10%Cr alloy. The work of this paper is focused concerning long life of anode because Ni-10% Cr anode is suffering from sintering and creep behavior during cell operation. Therefore, Ni-coated Alumina powder($20{\mu}m$) was developed by electroless nickel plating. Optimum condition of electroless nickel coation on $20{\mu}m$ alumina is as follows: pH 11.7, temperature $65{\sim}80^{\circ}C$, powder amount $100cm^2/l$. The deposition rate for Ni-electroless plating was as a function of temperature and activation energy was evaluated by Arrhenius Equation thereby activation energy calculated slope of experimental data as 117.6 kJ/mol, frequency factor(A) was $6.28{\times}10^{18}hr^{-1}$, respectively.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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• pp.214-219
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• 2009

In high-efficiency crystalline silicon solar cells, If high-efficiency solar cells are to be commercialized. It is need to develop superior contact formation method and material that can be inexpensive and simple without degradation of the solar cells ability. For reason of plated metallic contact is not only high metallic purity but also inexpensive manufacture. It is available to apply mass production. Especially, Nickel, Copper and Silver are applied widely in various electronic manufactures as easily formation is available by plating. The metallic contact system of silicon solar cell must have several properties, such as low contact resistance, easy application and good adhesion. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. Nickel monosilicide(NiSi) has been suggested as a suitable silicide due to its lower resistivity, lower sintering temperature and lower layer stress than $TiSi_2$. Copper and Silver can be plated by electro & light-induced plating method. Light-induced plating makes use the photovoltaic effect of solar cell to deposite the metal on the front contact. The cell is immersed into the electrolytic plating bath and irradiated at the front side by light source, which leads to a current density in the front side grid. Electroless plated Ni/ Electro&light-induced plated Cu/ Light-induced plated Ag contact solar cells result in an energy conversion efficiency of 14.68 % on $0.2{\sim}0.6{\Omega}{\cdot}cm,\;20{\times}20mm^2$, CZ(Czochralski) wafer.

• 한국수소및신에너지학회논문집
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• 제20권5호
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• pp.361-370
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• 2009

Ni-PTFE composite plated on graphite (C/Ni-PTFE) and PTFE (PTFE/Ni-PTFE) particles were prepared uniformly by electroless composite plating. The conductivity of C/Ni-PTFE particles was 280 S/m higher than 95 S/m of PTFE/Ni-PTFE particles at same composite plating condition (Ni:35~36 wt%, PTFE:8 wt%). The C/Ni-PTFE particles were formed into the C/Ni-PTFE plate using heat treatment at $350^{\circ}C$ under 10~$1000\;kg/cm^2$. The C/Ni-PTFE plate showed 1) high conductivity of $5.7\;{\times}\;10^4\;S/m$ due to the existence of graphite as conducting aid and the formation of 3-dimensional Ni network 2) good gas diffusion caused by various pore volumes (0.01~$100\;{\mu}m$) in the plate. The plate could be useful for an electrode in an alkaline fuel cell (AFC). The current density of C/Ni-PTFE electrode indicated $84\;mA/cm^2$ at 0.3V and it was 3.0 times higher than that of PTFE/Ni-PTFE electrode.

• 한국축산식품학회지
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• 제42권6호
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• pp.942-952
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• 2022

To establish a pre-plating method of chicken satellite cells with high purity, pre-plating was performed under culture conditions of 37℃ and 41℃, and the pre-plating time was set from a total of 3 hours to 6 hours in consideration of the cell attachment time. The purity of the cells was confirmed by staining paired box protein 7 (Pax7) after proliferation, and Pax7 expression was the highest in culture flasks shaken for 2 hours after incubation at 41℃ for 2 hours to prevent the attachment of satellite cells (p<0.05). Also, when pre-plating and proliferation were performed at 37℃ and 41℃, the Pax7 expression rate was higher at 41℃. The differentiation capabilities of the three groups (T3, T6, and T7) with high Pax7 expression were compared and the fusion index (%) and myotube formation area (%) determined by myosin heavy chain (MHC) staining was calculated. The T6 and T7 groups, which were cultured at 41℃, showed significantly higher values than the T3 group (p<0.05). There was no significant difference in the expression of Pax7 and MHC between the T6 and T7 groups (p>0.05). These results suggest that pre-plating at 41℃ for a total of 4 hours was the most efficient in terms of cost and time for purifying chicken satellite cells for cultured meat.

• 한국표면공학회지
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• 제43권2호
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• pp.64-72
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• 2010

CuSnZn electroplating was investigated as alternative to Ni plating. Evaluation of electrolyte and plating process was performed to control physical characteristics of the film, and to collect practical data for application. Hull-cell test was conducted for basic comparison of two commercialized products and developed product. Based on hull-cell test results, long term test of three electrolytes was performed. Various analysis on long term tested electrolyte and samples have been done. Reliable and practical data was collected using FE-SEM (FEI, Sirion), EDX (ThermoNoran SIX-200E), ICP Spectrometer (GBC Scientifi c, Integra XL), FIB (FEI, Nova600) for anlysis. Physical analysis and reliability test of the long term tested film were also carried out. Through this investigation plating time, plating speed, electrolyte composition, electrolyte metal consumption, hardness and corrosion resistance has been compared. This set of data is used to predict and control the chemical composition of the film and modify the physical characteristics of the CuSnZn alloy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 춘계학술대회 논문집
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• pp.145-149
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• 1995

The metallization is the key to determining cell costs, call performance, and cell and system reliabiltiy. The Burled Contact Solar Cell (BCSC) was specifical1y desinged to be compatible tilth low cost, mass production techniques and avoid the conventional metallization problem. By using electroless plating trchniqeu, we performed this metallization inexpensively and reliabley, This paper presents the details of the optimization procedure of metallization schemes on laser grooved cell surface Commercially available Ni ,Cu, and Ag plating solutions were applied for the cell metallization. The application of those solutions on the buried contact front metalization has resulted in an cell efficiency of 18.5% The cell parameters are an open circuit voltage of 651 mV, short circuit current density of 38.6 mA/$\textrm{cm}^2$, and fill factor of 73.5%.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.91.2-91.2
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• 2010

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. The better performance of Ni/Cu contacts is attributed to the reduced series resistance due to better contact conductivity of Ni with Si and subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading combined with the lower resistance of a metal silicide contact and improved conductivity of plated deposit. This improves the FF as the series resistance is deduced. This is very much required in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. This paper using selective emitter structure technique, fabricated Ni/Cu plating metallization cell with a cell efficiency of 17.19%.