• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.75-75
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• 2001

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.375-378
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• 1998

Platinum thin film which hardly form volatile compounds with any reactive gas at normal process temperature was etched in inductive coupled BCl$_{3}$/Cl$_{2}$ plasma. The etch rate of platinum thin film increased with increasing Cl$_{2}$/(Cl$_{2}$ + BCl$_{3}$) ratio. That reasoned increasing of ion current density.

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.401-404
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• 1989

Some magnetic probes for theta-pinch experiment have been constructed. Methods of building the coil, conecting it to the oscilloscope, shielding and enclosing the probe are discribed. Such a probe has been used to measure the magnetic flux penetrating it within theta - pinched plasmas.

• 제어로봇시스템학회:학술대회논문집
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• 2002.10a
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• pp.32.5-32
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• 2002

Processing plasmas are playing a crucial role in either depositing thin films or etching fine patterns. Any variability in process factors (such as radio frequency power or pressure) can cause a significant shift in plasma state. When this shift becomes large enough to change operating condition beyond an acceptable level, overall product quality can greatly be jeopardized. Thus, timely and accurate diagnosis of plasma malfunction is crucial to maintaining device yield and throughput. Many diagnostic systems have been developed, including HIPOCRATES [1] and PIES [2]. Plasma equipment was also diagnosed by combining neural network and expert system called Dempster-Schafer Theory [3]. A fact c...

• Corrosion Science and Technology
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• v.2 no.4
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• pp.189-193
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• 2003

The Ru etching using $O_2/C_{12}$ plasmas has been studied by employing the helicon etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with varied process variables were investigated. The Ru etching slope at the optimized etching condition was measured to be $84^{\circ}$. We reveal that the Ru etching using $O_2/C_{12}$ plasma generates the $RuO_2$ thin film. Possible mechanism of Ru etching is discussed.

• Journal of Industrial Technology
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• v.15
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• pp.15-22
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• 1995

We have studied the generation and behavior of negative ions in silane plasmas. The negative ions were formed by homogeneous reaction in silane plasma and the behavior of negative ions were predicted by solving the model equations. The concentration profiles of negative ions were shown as a function of reactor length and time. The effects of process variables such as reactor pressure, flow rate and electrical field strengths on the behavior of negative ions were analyzed.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.117-117
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
• /
• pp.83-83
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• 2003

• Proceedings of the Korean Vacuum Society Conference
• /
• 2003.02a
• /
• pp.118-118
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• 2003

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.240-240
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• 2015

본 논문에서는 플라즈마 모델링과 식각 표면 분석을 통해 가스 비율 변화에 따른 $CF_4/C_4F_8/Ar$ 유도결합 플라즈마의 특성과 Si 및 $SiO_2$의 식각 메커니즘에 대해 연구하였다.