• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제13회 학술발표회 논문개요집
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• pp.213-214
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• 1997

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제36회 동계학술대회 초록집
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• pp.251.1-251.1
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• 2009

• 한국재료학회:학술대회논문집
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• 한국재료학회 1997년도 한국재료학회 추계학술발표회
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• pp.104-104
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• 1997

• 한국광학회:학술대회논문집
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• 한국광학회 1999년도 제16회 광학 및 양자전자 학술발표회Proceedings of 16th Optics and Quantum Electronics Conference, 1999
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• pp.168-169
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• 1999

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 춘계학술발표대회 및 제10회 신소재 심포지엄 논문개요집
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• pp.27.2-27.2
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• 2006

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1998년도 춘계학술발표회 초록집
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• pp.39-40
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• 1998

• Macromolecular Research
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• 제12권6호
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• pp.608-614
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• 2004

Isotactic polypropylene (PP) surfaces were modified with argon and oxygen plasmas using a radio­frequency (RF) glow discharge at 240 mTorr and 40 W. The changes in topography and surface structure were investigated by atomic force microscopy (AFM) in conjunction with specular reflectance of infrared (IR) microspectroscopy. Under our operating conditions, the AFM image analysis revealed that longer plasma treatment resulted in significant ablation on the PP surface, regardless of the kind of plasma employed, but the topography was dependent on the nature of the gases. Specular reflectance IR spectroscopic analysis indicated that the constant removal of surface material was an important ablative aspect when using either plasma, but the nature of the ablative behavior and the resultant aging effects were clearly dependent on the choice of plasma. The use of argon plasma resulted in a negligible aging effect; in contrast, the use of oxygen plasma caused a noticeable aging effect, which was due to reactions of trapped or isolated radicals with oxygen in air, and was partly responsible for the increased surface area caused by ablation. The use of oxygen plasma is believed to be an advantageous approach to modifying polymeric materials with functionalized surfaces, e.g., for surface grafting of unsaturated monomers and incorporating oxygen-containing groups onto PP.

• Transactions on Electrical and Electronic Materials
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• 제2권1호
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• pp.1-6
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• 2001

$C_{x}F_{y}$ polymer film was deposited in rf and dc Fluorinert vapor ($C_{7}F_{16}$) plasmas. In the plasma phase, the spatial distribution of optical emission spectra and the temporal concentration of decomposed species were monitored, and kinetics of the $C_{7}F_{16}$ decomposition process was discussed. Deposition of $C_{x}F_{y}$ film has been tried on substrates of stainless steel, glass, molybdenum and silicon wafers at room temperature in the vapor pressures of 40 and 100 Pa. The films deposited in the rf plasma showed excellent electrical properties as an insulator for multi-layered interconnection of deep-submicron LSI, i.e. the low dielectric constant ∼2.0, the dielectric strength ∼2 MV/cm and the high deposition rate ∼100nm/min at 100W input power.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.288-288
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• 2012

The oxidation characteristics of tungsten line pattern during the carbon-based mask layer removal process using oxygen plasmas and the reduction characteristics of the WOx layer formed on the tungsten line surface using hydrogen plasmas have been investigated for sub-50 nm patterning processes. The surface oxidation of tungsten line during the mask layer removal process could be minimized by using a low temperature ($300^{\circ}K$) plasma processing instead of a high temperature plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WOx on the tungsten line could be decreased to 25% of WOx formed by the high temperature processing. The WOx layer could be also completely removed at the low temperature of $300^{\circ}K$ using a hydrogen plasma by supplying bias power to the tungsten substrate to provide an activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40 nm-CD device processing, the complete removal of WOx formed on the sidewall of tungsten line could be observed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.196.2-196.2
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• 2016

The design and development procedures of SF6 gas circuit breakers are still largely based on trial and error through testing although the development costs go higher every year. The computation cannot cover the testing satisfactorily because all the real processes arc not taken into account. But the knowledge of the arc behavior and the prediction of thermal plasmas inside SF6 interrupters by numerical simulations are more useful than those by experiments due to the difficulties to obtain physical quantities experimentally and the reduction of computational costs in recent years. In this paper, in order to get further information into the interruption process of a SF6 self-blast interrupter, which is based on the combination of thermal expansion and arc rotation, gas flow simulations with a CFD-arc modeling are performed during the whole switching process such as high-current period, pre-current zero period, and current-zero period. Through the complete work, the temperature of residual arcs as well as the breakdown index after current zero should be a good criterion to predict the dielectric capability of interrupters.