• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.109-109
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• 2010

최근 AC-PDP에서 MgO Protective Layer 위에 별도의 기능막(Functional Layer)을 사용하고 있는데, 이 기능막인 MgO 나노 입자는 장시간 구동시 AC_PDP panel내에서 plasma 방전에 의하여 MgO Protective Layer와 기능막이 방전 공간에 형성 된 이온에 의해 Sputtering 또는 재 증착 될 수 있다. 본 실험에서는 조성이 다른 기능막이 적용된 AC-PDP Test panel을 제작하여 장시간 구동 후 기능막인 두 가지 다른 MgO 나노 입자의 재형성된 형태를 주사 전자 현미경(Scanning Electron Microscope)을 통해 Surface Profile 및 구조의 변화를 분석하고, 또한 음극선 분광 분석(Cathodoluminascence)을 통하여 방전 영역과 비방전 영역의 delay time, 방전전압 및 효율 등의 전기 광학적 특성과의 관계를 분석하고자 한다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.194-195
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• 2012

대향 타겟 스퍼터링법 (Facing Targets Sputtering)을 이용하여 저온 공정에서 ZnO 박막을 증착하였다. 이 실험에서 두 개의 타겟의 거리를 70nm로 고정하고 박막의 증착두께를 150nm로 정하였다. 인가전압을 변수로 하였을 경우 ZnO 박막의 방향성과 결정성을 XRD로 측정하고 분석하였고 OES로 플라즈마 진단을 하였다. 그 결과 인가전압의 증가에 따라 결정성은 증가하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.141-141
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• 2012

고종횡비 10:1 비아를 Si wafer 상에 형성하기 위해 $7{\mu}m$ 직경의 마스크로 포토작업하여 Cr층을 100nm 스퍼터링하여 PR(photo resistor) 대신의 에칭 barrier 막으로 사용하였다. 얼라인, 노광, 현상을 거쳐 Cr에칭, PR 제거후 ICP(inductively coupled plasma) 공정으로 Si deep etching하여 via 직경 $10.16{\mu}m$, 깊이 $102.5{\mu}m$의 고종횡비 비아를 형성하였다. 구리필링도금을 위해서 필수적인 seed layer는 단층 또는 다층의 금속막을 스퍼터링 법으로 형성하였다. 형성된 seed layer 단면을 FE-SEM(Field emission scanning electron microscope)으로 관찰하여 내부에 seed 층의 형성 유무를 확인하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.269-271
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• 2005

Using optimized sputtering condition of a-Si and $SiO_2$ thin film, we can obtained the large grained poly-Si film on PES substrate. The gate dielectric grown by plasma enhanced atomic layer deposition, laser activation and organic interlayer dielectric material make TFTs on PES possible with mobility of $11cm^2/Vs$ (nMOS) and $7cm_2/Vs$ (pMOS).

• 한국재료학회지
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• 제17권4호
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• pp.232-235
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• 2007

Indium tin oxide (ITO) films were deposited on polycarbonate CR39 substrate using DC magnetron sputtering. ITO thin films were deposited at room temperature because glass-transition temperature of CR39 substrate is $130^{circ}C$ ITO thin films are used as bottom and top electrodes and for organic thin film transparent transistor (OTFT). The electrodes electrical properties of ITO thin films and their optical transparency properties in the visible wavelength range (300-800 nm) strongly depend on the volume of oxygen percent. The optimum resistivity and transparency of ITO thin film electrode was achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85% transparency in the visible wavelength range (300-800 nm) was measured without post annealing process, and resistivity as low as $9.83{\times}^{TM}10^{-4}{\Omega}$ cm was measured at thickness of 300 nm.

• 한국표면공학회지
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• 제24권2호
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• pp.67-72
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• 1991

The feasibility of preparing superconducting $Y_1Ba_2Cu_3O_y$ films on metallic substrate was exmined in an attempt to fabricate a tape conductor. Deposition methods employed were sputtering, laser ablation, and plasma flash evaporation. Although zero resistance temperature (Tc) is achieved above 90 K, critical current density values (Jc) obtained so far is still low as compared with those reported in the films grown on single crystal substrates. This may be caused by the misalignment of the crystal structure of the films on metal substrates. A further improvement if Jc for highly-oriented polycrystalling films is being investigated at the present time.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.318-321
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• 2009

We have studied transparent top gate Al-Zn-Sn-O (AZTO) TFTs with an $Al_2O_3$ protective layer (PL) on an active layer. We also fabricated a transparent 2.5 inch QCIF+AMOLED display panel using the AZTO TFT back-plane. The AZTO active layers were deposited by RF magnetron sputtering at room temperature and the PL was deposited by ALD with two different processes. The mobility and subthreshold slope were superior in the cases of the vacuum annealing and the oxygen plasma PL compared to the $O_2$ annealing and the water vapor PL, however, the bias stability was excellent for the TFTs of the $O_2$ annealing and the water vapor PL.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1415-1417
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• 2009

High transmittance and low resistance index matched transparent conducting oxide (IMTCO) coated glass was prepared and characterized. IMTCO was deposited by RF magnetron sputtering with the thickness of 15nm and 90nm thick anti-reflection layer was evaporated. To modify surface to hydrophilic, in-situ plasma treatment was also performed. IMTCO coated glass exhibited 96.6% of transmittance in the wavelength range of 400~700nm which is relatively high value compared to commercially available IMTCO glass. The sheet resistance uniformity was measured to be 1.53%.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1783-1788
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• 2004

In the present paper, a micro flow sensor, which can be used at bio-delivery systems and micro heat pumps, is developed. For this, the micro flow sensor is integrated on a quartz wafer ($SiO_2$) and is manufactured by simple and convenient microfabrication processes. The micro flow sensor aims for measuring mass flow rates in the low range of about $0{\sim}20$ SCCM. The micro flow sensor is composed of temperature sensors, a heater, and a flow microchannel. The temperature sensors and the heater are manufactured by the sputtering processes in this study. In the microfabrication processes, stainless steel masks with different patterns are used to deposit alumel and chromel for temperature sensors and nichrome for the heater on the quartz wafer. The microchannel is made of Polydimethylsiloxane(PDMS) easily. A deposited quartz wafer is bonded to the PDMS microchannel by using the air plasma. Finally, we confirmed the good operation of the present micro flow sensor by measuring flow rate.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1430-1432
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ZnO:Al films with the optimum growth conditions of working gas pressure and substrate temperature showed resistivity of $9.64{\times}10^{-4}\;{\Omega}$-cm and transmittance of 90.02% for a film 860nm thick in the wavelength range of the visible spectrum.