• Korean Journal of Materials Research
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• v.12 no.7
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• pp.568-572
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• 2002

Plasma sulfnitriding technology was employed to harden the surface of SKD61 steel. The plasma sulfnitriding was performed with 3 torr gas pressure at $580^{\circ}C$ for 20 hours. Plasma sulfnitriding resulted in the formation of very thin $2-3\mu\textrm{m}$ FeS sulfide layer on top of $15-20\mu\textrm{m}$ compound layer, which consisted of predominantly $\varepsilon$- $Fe{2-3}$ N and a second phase of $\Upsilon'-Fe_4$N. In comparision with plasma nitriding treatment, plasma sulfnitriding treatment showed better surface roughness and corrosion resistance due to the presence of the thin FeS layer. which coated microvoids and microcracks on top of the nitrided layer. It was also found that plasma sulfnitrided sample showed better wear resistance due to the presence of the thin FeS layer which acted as a solid lubricant.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.193-197
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• 2012

Oxygen plasma has been treated on the surface of indium-tin-oxide (ITO) to improve the efficiency of the organic light-emitting diodes (OLEDs) device. The plasma treatment was expected to inject the holes effectively due to the control of an ITO work-function and the reduction of surface roughness. To optimize the treatment condition, a surface resistance and morphology of the ITO surface were investigated. The effect on the electrical properties of the OLEDs was evaluated as a function of oxygen plasma powers (0, 200, 250, 300, and 450 W). The electrical properties of the devices were measured in a device structure of ITO/TPD/Alq3/BCP/LiF/Al. It was found the plasma treatment of the ITO surface affects on the efficiency of the device. The efficiency of the device was optimized at the plasma power of 250 W and decreased at higher power than 250 W. The maximum values of luminance, luminous power efficiency, and external quantum efficiency of the plasma treated devices increase by 1.4 times, 1.4 times, and 1.2 times, respectively, compared to those of the non-treated ones.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.49.1-49.1
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• 2010

The particle generation during the plasma enhanced process is highly considered as serious problem in the semiconductor manufacturing industry. The material for the plasma processing chamber requires the plasma etching characteristics which are homogeneously etched surface and low plasma etching depth for preventing particulate contamination and high durability. We found that the materials without grain boundaries can prevent the particle generation. Therefore, the amorphous material with the low plasma etching rate may be the best candidate for the plasma processing chamber instead of the polycrystalline materials such as yttria and alumina. Three glasses based on $SiO_2$ and $Al_2O_3$ were prepared with various rare-earth elements (Gd, Y and La) which are same content in the glass. The glasses were plasma etched in the same condition and their plasma etching rate was compared including reference materials such as Si-wafer, quartz, yttria and alumina. The mechanical and thermal properties of the glasses were highly related with cationic field strength (CFS) of the rare-earth elements. We assumed that the plasma etching resistance may highly contributed by the thermal properties of the fluorine byproducts generated during the plasma exposure and it is expected that the Gd containing glass may have the highest plasma etching resistance due to the highest sublimation temperature of $GdF_3$ among three rare-earth elements (Gd, Y and La). However, it is found that the plasma etching results is highly related with the mechanical property of the glasses which indicates the cationic field strength. From the result, we conclude that the glass structure should be analyzed and the plasma etching test should be conducted with different condition in the future to understand the plasma etching behavior of the glasses perfectly.

• Macromolecular Research
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• v.12 no.6
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• pp.553-558
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• 2004

An ultrafiltration membrane (polyethersulfone, PM 10) was surface-modified by treating it with low-tem­perature plasmas of oxygen, acrylic acid (AA), acetylene, diaminocyolohexane (DACH), and hexamethyldisiloxane (HMDSO). The effects that these modifications have on the filtration efficiency of a membrane in waste water treat­ment were investigated. The oxygen, AA, and DACH plasma-treated membranes became more hydrophilic. The water contact angles ranged from < $10^{\circ}\;to\;55^{\circ}$ depending on the type of plasma and the treatment conditions. The oxygen plasma-treated membranes displayed a higher initial flux $(312-429\%),$ but lower rejection $(6-91\%),$ than did an untreated membrane. The AA plasma-treated membranes displayed lower or higher initial flux $(42-156\%),$ depending upon the treatment conditions, but higher rejection $(224-295\%)$ in all cases. The DACH plasma-treated membranes displayed lower initial flux. All of them, especially the AA plasma-treated membrane, displayed improved fouling resistance with either a slower or no flux decline. Acetylene and HMDSO plasma-treated membranes became more hydrophobic and displayed both lower initial flux and lower fouling resistance.

• Journal of the Korean institute of surface engineering
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• v.47 no.5
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

• Biomolecules & Therapeutics
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• v.3 no.2
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• pp.116-121
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• 1995

Some multidrug resistance inhibitors have been known to be influenced by the serum concentration. In this study, effect of serum concentration on inhibition of nucleoside transport by BIBW22, a new multidrug resistance inhibitor derived from dipyridamole (DPM), was studied. When 5% or 100% (v/v) of fetal bovine serum (FBS) was contained in the culture, DPM dose for which nucleoside transport was inhibited by 50% (lD$_{50}$) was 0.42 $\mu$M or 1.17 $\mu$M, respectively. BIBW22 also showed the same trend as DPM did in response to increase of FBS concentration. However, ID$_{50}$ value for DPM in the absence or presence of human plasma was 0.007 $\mu$M or 1.02 $\mu$M respectively showing 145 times increase of ID$_{50}$ value. ID$_{50}$ value for BIBW22 in the presence of human plasma was 0.028 $\mu$M showing only 5 times increase in ID$_{50}$ value. This result suggests that potency of BIBW22 was much less affected by the plasma concentration and BIBW22 could be a good candidate for a clinical use in multidrug resistance treatment.treatment.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.2
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• pp.162-168
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• 2011

In this research, nitrogen plasma source ion implantation(PSII) of non-coated tungsten carbide endmill tools was conducted with low heat treatment for increasing wear resistance. After the low heat treatment of PSIIed tools to give a homogeneity of wear resistance, the surface modification of tools was analyzed by hardness test, surface roughness and cutting forces. As for the resultant cutting forces, low heat treatment in temperature of $400^{\circ}C$ and $500^{\circ}C$ is stable because of low cutting resistance. The 20-minutes heat treated tool at spindle speed 25000rpm has superiority of surface roughness, Ra of $0.420{\mu}m$ and was found to have good wear resistance. The higher hardness value was obtained by increasing temperature from $300^{\circ}C$ to $600^{\circ}C$ for PSIIed tools with low heat treatment. As the PSIIed tools under 10minutes at temperature of $600^{\circ}C$ have the highest hardness as Hv of 2349.8, It was analyzed that temperature processing give much influences on hardness.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.486-491
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• 2017

Silver nanowire (AgNW) transparent electrode is one of next generations of flexible and transparent electrode. The electrode shows high conductivity and high transparency comparable to ITO. However, the electrode is weak against heat. The wires are separated into nanodots at temperature above $200^{\circ}C$. It causes the electrical resistance increase. Moreover, it is vulnerable to oxygen and moisture in the atmosphere. The improvement of thermal and moisture resistance of silver nanowire transparent electrode is the most important for commercializing. We proposed silver nanowires transparent electrode which is capped with very thin nickel oxide layer. The nickel oxide layer is five nanometers of thickness, but the heat and moisture resistance of the transparent electrode is effectively improved. The AgNW/NiO electrode can endure at $300^{\circ}C$ of temperature for 30 minutes, and resistance is not increased for 180 hours at $85^{\circ}C$ of temperature and 85% of relative humidity. We showed an applications of transparent and flexible heater using the electrode, the heater is operated more than $180^{\circ}C$ of temperature.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.359-368
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• 2020

This study is aimed at improving the plasma resistance of Al₂O₃ ceramics on which plasma resistant YAS(Y₂O₃-Al₂O₃-SiO₂) frit is melt-coated using a simple heat-treatment process. For this purpose, the results of phase analysis and microstructural observations of the prepared YAS frits and the coating layers on the Al₂O₃ ceramics according to the batch compositions are compared and discussed with regard to the results of plasma resistance test. The prepared YAS frits consist of crystalline or amorphous or co-existing crystalline and amorphous phases according to the batch compositions, depending on the role and content of each raw material. The prepared YAS frit is melt-coated on the densely sintered Al₂O₃ ceramics, resulting in a dense coating layer with a thickness of at least ~ 80 ㎛. The YAS coating layer consists of crystalline YAG(Y₃Al₅O₁₂), Y₂Si₂O₇, and Al₂O₃ phases, and YAS glass phase. Plasma resistance of YAS coated Al₂O₃ ceramics is strongly dependent on the content of the YAG(Y₃Al₅O₁₂) and Y₂Si₂O₇ crystalline phases in the coating layer, especially on the content of the YAG phase. Comparing the weight loss of YAS coating ceramics with values obtained for commercial Y₂O₃, Al₂O₃, and quartz ceramics, the plasma resistance of the YAS coating ceramics is 6 times higher than that of quartz, 2 times higher than that of Al₂O₃, and 50 % of the resistance of Y₂O₃.

• The Korean Journal of Ceramics
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• v.2 no.4
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• pp.212-215
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• 1996

This paper focuses the strength and wear resistance of CVD diamond films. The strength of free-standing CVD diamond films synthesized by microwave plasm CVD, DC plasma CVD, RF plasma CVD and arc discharge plasma jet CVD has been measured by three-point bending test. The wear resistance of CVD diamod films has been evaluated by the pin-on-disk type testing. diamond films coated on the base of sintered tungsten carbide pin by hot filament CVD have been rubbed with a sintered diamond disk in muddy water. Volume removed wear of CVD diamond has been compared with stellite, WC alloy and bearing steel.