• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.354-355
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• 2009

In the fabrication of inverted top-emitting organic light emitting diodes (ITOLEDs), the sputtering process is needed for deposition of transparent conducting oxide (TCO) as top anode. Energetic particle bombardment, however, changes the physical properties of underlying layers. In this study, we examined plasma process effects on tungsten oxide ($WO_3$) hole injection layer (HIL). From our results, we suggest the theoretical mechanism to explain the correlation between the physical property changes caused by plasma process on $WO_3$ HIL and degradation of device performances.

• Ocean and Polar Research
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• v.39 no.2
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• pp.107-114
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• 2017

In this study, we investigated the effects of light spectra on physiology stress and DNA damage in juvenile rock bream (Oplegnathus fasciatus) using light-emitting diodes (LEDs; green, 520 nm; red, 630 nm) at two intensities (0.25 and $0.5W/m^2$ ) with application of thermal stress (25 and $30^{\circ}C$). We measured the mRNA expression of heat shock protein 70 (HSP70) and the levels of plasma cortisol, glucose, aspartate aminotransferase (AspAT), and alanine aminotransferase (AlaAT). Additionally, DNA damage was measured using comet assays. Our findings showed that HSP70 mRNA expression and plasma cortisol, glucose, AspAT, and AlaAT levels were significantly higher after exposure to high temperatures and were significantly lower after exposure to green LED light. Thus, although high water temperatures induced stress in juvenile rock bream, green LED light inhibited stress. In particular, green LED light reduced stress and DNA damage to a greater degree than other light sources.

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.27-31
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• 1998

We investigated visible light radiated from Plasma focus device by time-resolved analyzed method and time-integrated analyzed method. Plasma focus consisted of two coaxial electrodes is a device that translated from electric energy of maximum 40 kV/20 kJ in capacitor banks into visible light by electric discharge. Spectral analysis is using Monochromator(f =0.5m). Time-resolved spectrum is analyzed with a oscilloscope the light pulse of constant wavelength and time-integrated spectrum does with densitometer the film which developed a constant range of wavelength. The optimum condition of visible emission was that the discharging voltage was 17kV and the gas pressure 0.5 torr Ar.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.320-321
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• 2006

In this work, impedance Spectroscopic analysis was applied to study the effect of plasma treatment on the surface of indium-tin oxide (ITO) anodes using $CF_4g$ as and to model the equivalent circuit for organic light emitting diodes (OLEDs) with the $CF_4$ plasma treatment of ITO surface at the anodes. This device with ITO/TPD/$Alq_3$/LiF/Al structure can be modeled as a simple combination of a resistor and a capacitor. The $CF_4$ plasma treatment on the surface of ITO shifts the vacuum level of the ITO as a result of which the barrier height for hole injection at the ITO/organic interface is reduced. The Impedance spectroscopy measurement of the devices with the $CF_4$ plasma treatment on the surface of ITO anodes shows change of values in parallel resistance ($R_p$) and parallel capacitance ($C_p$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.436-437
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• 2006

In this work, impedance Spectroscopic analysis was applied to study the effect of plasma treatment on the surface of indum-tin oxide (ITO) anodes using $O_2$ gas and to model the equivalent circuit for organic light emitting diodes (OLEDs) with the $O_2$ plasma treatment of ITO surface at the anodes. This device with ITO/TPD/Alq3/LiF/Al structure can be modeled as a simple combination of a resistor and a capacitor. The $O_2$ plasma treatment on the surface of ITO shifts the vacuum level of the ITO as a result of which the barrier height for hole injection at the ITO/organic interface is reduced. The impedance spectroscopy measurement of the devices with the $O_2$ plasma treatment on the surface of ITO anodes shows change of values in parallel resistance ($R_p$) and parallel capacitance ($C_p$).

• Journal of the Semiconductor & Display Technology
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• v.23 no.2
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• pp.100-106
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• 2024

To generate the plasma required in dry cleaning processes, the plasma chamber must be supplied with a high-quality AC voltage with a voltage of more than 1 kV and a frequency of 400 kHz. In the existing research, many methods to supply high power have been studied, but how to improve the quality of the power for high-quality plasma has been relatively little studied. In this paper, we propose a study to improve the quality of RF power circuit for high-quality plasma generation in dry cleaning method. Existing methods in the environment of full-bridge-based RF power circuits must perform PWM duty control in the light load region. This causes distortions in the waveform, resulting in poor power quality, which directly leads to poor plasma quality. To solve these problems, a half-bridge switching method is proposed and the improvement in waveform quality is verified. To verify the feasibility of the design and control algorithm proposed in this paper, an RF power circuit prototype is fabricated and the proposed design and control method is verified through simulation and actual experiments under dummy load.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.747-750
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• 1999

A 30Watt inverter with 300: 1 dimming capability for high luminance, one cell, surface discharge plasma light source for LCD backlight was designed and tested. It was possible to achieve 300:1 dimming control by using the push-pull type inverter with burst-mode dimming control. The surface discharge plasma light cell with luminance of more than 5, 260 cd/$m^2$ was successfully operated.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.582-584
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• 2007

In order to improve the accuracy of simulated results, new UV source was designed. Previously the optical simulation was performed with the symmetric planar UV source. To design new UV source, UV distribution from the plasma fluid code was implanted to the 3-dimensional optical code to generate the visible light distribution. The results from planar UV source and new UV source were compared with the ICCD (Intensified CCD) image in real PDP cell and analyzed the variation of geometries and optical properties.

• Proceedings of the KACD Conference
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• 2001.11a
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• pp.578.1-578
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• 2001

The aim of this study was to evaluate the efficiency of the recently introduced light curing units to polymerize a light curing resin composite. Four light curing units XL 3000, Optilux 500 for halogen light source, Apollo 95E for plasma arc and Easy cure for LED (blue-light Emitting Diode) were evaluated. Radiometer was used for measure the light intensity.(omitted)

• Journal of the Optical Society of Korea
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• v.18 no.3
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• pp.283-287
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• 2014

Square lattice nano-hole arrays with diameters and periodicities of 200 and 500 nm, respectively, are fabricated on InGaN/GaN blue light emitting diodes (LEDs) using electron-beam lithography and inductively coupled plasma reactive ion etching processes. Cathodoluminescence (CL) investigations show that light emission intensity from the LEDs with the nano-hole arrays is enhanced compared to that from the planar sample. The CL intensity enhancement factor decreases when the nano-holes penetrate into the multiple quantum wells (MQWs) due to the plasma-induced damage and the residues. Wet chemical treatment using KOH solution is found to be an effective method for light extraction from the nano-patterned LEDs, especially, when the nano-holes penetrate into the MQWs. About 4-fold CL intensity enhancement factor is achieved by the KOH treatments after the dry etching for the sample with a 250-nm deep nano-hole array.