• Title/Summary/Keyword: Plasma ion current

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Role of Magnetic Field Configuration in a Performance of Extended Magnetron Sputtering System with a Cylindrical Cathode

  • Chun, Hui-Gon;Sochugov, Nikolay S.;You, Yong-Zoo;Soloviv, Andrew A.;Zakharov, Alexander N,
    • Journal of the Semiconductor & Display Technology
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    • v.2 no.3
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    • pp.19-23
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    • 2003
  • Extended unbalanced magnetron sputtering system based on the cylindrical magnetron with a rotating cathode was developed. The unbalanced configuration of magnetic field was realized by means of additional lines of permanent magnets, placed along both sides of a 89 mm outer diameter and 600 mm long cylindrical cathode. The performance of the unbalanced magnetron was assessed in terms of the ion current density and the ion-to-atom ratio incident at the substrate. Furthermore, the paper presents the comparison of the internal plasma parameters, such as the electron temperature, electron density, plasma and floating potentials, measured by a Langmuir probe in various positions from the cathode, for conventional and unbalanced constructions of the cylindrical magnetron. The plasma density and ion current density are about 3-5 times higher than those of conventional one, in the unbalanced magnetron in a 0.24 Pa Ar atmosphere with a DC cathode power of 3 kW.

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Deuterium ion irradiation impact on the current-carrying capacity of DI-BSCCO superconducting tape

  • Rajput, M.;Swami, H.L.;Kumar, R.;Bano, A.;Vala, S.;Abhangi, M.;Prasad, Upendra;Kumar, Rajesh;Srinivasan, R.
    • Nuclear Engineering and Technology
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    • v.54 no.7
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    • pp.2586-2591
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    • 2022
  • In the present work, we have irradiated the DI-BSCCO superconducting tapes with the 100 keV deuterium ions to investigate the effect of ion irradiation on their critical current (Ic). The damage simulations are carried out using the binary collision approximation method to get the spatial distribution and depth profile of the damage events in the high temperature superconducting (HTS) tape. The point defects are formed near the surface of the HTS tape. These point defects change the vortex profile in the superconducting tape. Due to the long-range interaction of vortices with each other, the Ic of the tape degrades at the 77 K and self magnetic field. The radiation dose of 2.90 MGy degrades the 44% critical current of the tape. The results of the displacement per atom (dpa) and dose deposited by the deuterium ions are used to fit an empirical relation for predicting the degradation of the Ic of the tape. We include the dpa, dose and columnar defect terms produced by the incident particles in the empirical relation. The fitted empirical relation predicts that light ion irradiation degrades the Ic in the DI-BSCCO tape at the self field. This empirical relation can also be used in neutron irradiation to predict the lifetime of the DI-BSCCO tape. The change in the Ic of the DI-BSCCO tape due to deuterium irradiation is compared with the other second-generation HTS tape irradiated with energetic radiation.

Detail relation of negative ion density with positive ion mass and sheath parameters

  • Kim, Hye-Ran;Woo, Hyun-Jong;Sun, Jong-Ho;Chung, Kyu-Sun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.470-470
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    • 2010
  • Negative ions are generated in fusion edge plasmas, material processing plasmas, ionospheric plasmas. Analytic formulas for the deduction of the absolute density of negative ions was given by using the current-voltage(IV) characteristics of two electric probes at two different pressures [1], and negative ion density has been measured by one electric probe using the current-voltage characteristics of three different pressures [2]. Ratios of ion and electron saturation currents and electron temperatures and sheath areas of different pressures are usually incorporated into two equations with two unknowns for the negative ion density. In the previous publications, the sheath factor(sheath area, sheath density, sheath velocity) and effective masses of background ions with different pressures are qualitatively incorporated for the deduction of negative density. In this presentation, the quantitative and detailed relation of negative ion density with sheath factor and effective masses are going to be given. The effect of these parameters on the change of IV characteristics will be addressed.

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Structure of a Plasma Ion Source for a Cross-Section SEM Sample (SEM 단면 시료 제작을 위한 플라즈마 이온원의 구조)

  • Won, Jong-Han;Jang, Dong-Young;Park, Man-Jin
    • Journal of the Korean Society of Manufacturing Technology Engineers
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    • v.24 no.4
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    • pp.400-406
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    • 2015
  • This study researched the structure of the source of an ion milling machine used to fabricate a scanning electron microscope (SEM) sample. An ion source is used to mill out samples of over 1 mm dimension using a broad ion beam to generate plasma between the anode and cathode using a permanent magnet. To mill the sample in the vacuum chamber, the ion source should be greater than 6 kV for a positive ion current over $200{\mu}A$. To discover the optimum operating conditions for the ion miller, the diameter of the extractor, anode shape, and strength of the permanent magnet were varied in the experiments. A silicon wafer was used as the sample. The sputter yield was measured on the milled surface, which was analyzed using the SEM. The wafer was milled by injecting 1 sccm of argon gas into the 0.5 mTorr vacuum chamber.

Characterization of ECR Plasma by Using Ion Analyzer and Its Silicon Etching (이온 분석기에 의한 ECR 플라즈마의 특성 분석 및 실리콘 식각에 관한 연구)

  • 이석현;이호준;황기웅
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.5
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    • pp.492-501
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    • 1992
  • In this paper, an ion analyzer is used in conjunction with a Langmuir probe to study the chracteristics of ECR plasma such as the ion temperature, ion current density and electron temperature as the operating pressure, ${\mu}$-wave power and axial position change, Silicon etching has been performed with RF-biasing and its etching chracteristics have been discussed in terms of the ion energy distribution function. The maximum value of ion current density appears in the range of 10S0-3T mbar and the broadening of ion energy distribution function increases as pressure increases. Therefore, as pressure decreases, anisotropy increases but selectivity to photoresist decreases.

Grid를 이용한 고밀도 플라즈마 소스의 이온 특성 연구

  • Byeon, Tae-Jun;Gwon, A-Ram;Kim, Seung-Jin;Kim, Jeong-Hyo;Park, Min-Seok;Jeong, U-Chang
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.497-497
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    • 2012
  • 산업의 발전함에 따라 고기능성 박막의 수요가 증가하고 있으며, magnetron sputtering, e-beam evaporation, ion beam 등을 이용한 박막 증착에 대한 연구가 많이 진행되고 있다. 그러나 기존 방법만으로는 박막 접착계면의 불균일로 인해 고기능성 박막 성장이 어렵다는 단점을 가지고 있다. 이러한 문제를 해결하기 위하여 박막 공정 중 고밀도 플라즈마 소스(high density plasma source)를 통해 추가적인 에너지를 인가하여 박막의 밀도를 bulk 수준으로 증가시키고 내부 응력을 조절하는 연구에 대한 관심이 커지고 있다. 특히 grid를 이용하여 플라즈마 내 이온의 입사에너지를 증가시킴으로써, 기존 공정보다 고기능성 박막을 구현할 수 있다. 본 연구에서는 RF power를 이용한 inductively coupled plasma를 통해 플라즈마를 생성시킨 후 grid에 DC power를 인가하는 플라즈마 소스를 개발하였으며, 시뮬레이션을 통해 plasma density와 ion current density, ion energy 분석 및 grid 디자인을 하였다. 개발된 플라즈마 소스는 ion energy analyzer를 통해 RF power 및 grid에 인가하는 power의 세기에 따라 이온화 정도 및 이온의 입사에너지를 측정하였다.

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Experimental Results of New Ion Source for Performance Test

  • Kim, Tae-Seong;Jeong, Seung-Ho;Jang, Du-Hui;Lee, Gwang-Won;In, Sang-Yeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.269-269
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    • 2012
  • A new ion source has been designed, fabricated, and installed at the NBTS (Neutral Beam Test Stand) at the KAERI (Korea Atomic Energy Research Institute) site. The goalis to provide a 100 keV, 2MW deuterium neutral beam injection as an auxiliary heating of KSTAR (Korea Super Tokamak Advanced Research). To cope with power demand, an ion current of 50 A is required considering the beam power loss and neutralization efficiency. The new ion source consists of a magnetic cusp bucket plasma generator and a set of tetrode accelerators with circular copper apertures. The plasma generator for the new ion source has the same design concept as the modified JAEA multi-cusp plasma generator for the KSTAR prototype ion source. The dimensions of the plasma generator are a cross section of $59{\times}25cm^2$ with a 32.5 cm depth. The anode has azimuthal arrays of Nd-Fe permanent magnets (3.4 kG at surface) in the bucket and an electron dump, which makes 9 cusp lines including the electron dump. The discharge properties were investigated preliminarily to enhance the efficiency of the beam extraction. The discharge of the new ion source was mainly controlled by a constant power mode of operation. The discharge of the plasma generator was initiated by the support of primary electrons emitted from the cathode, consisting of 12 tungsten filaments with a hair-pin type (diameter = 2.0 mm). The arc discharge of the new ion source was achieved easily up to an arc power of 80 kW (80 V/1000 A) with hydrogen gas. The 80 kW capacity seems sufficient for the arc power supply to attain the goal of arc efficiency (beam extracted current/discharge input power = 0.8 A/kW). The accelerator of the new ion source consists of four grids: plasma grid (G1), gradient grid (G2), suppressor grid (G3), and ground grid (G4). Each grid has 280 EA circular apertures. The performance tests of the new ion source accelerator were also finished including accelerator conditioning. A hydrogen ion beam was successfully extracted up to 100 keV /60 A. The optimum perveance is defined where the beam divergence is at a minimum was also investigated experimentally. The optimum hydrogen beam perveance is over $2.3{\mu}P$ at 60 keV, and the beam divergence angle is below $1.0^{\circ}$. Thus, the new ion source is expected to be capable of extracting more than a 5 MW deuterium ion beam power at 100 keV. This ion source can deliver ~2 MW of neutral beam power to KSTAR tokamak plasma for the 2012 campaign.

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Discharge Characteristics of a KSTAR NBI Ion Source

  • Chang Doo-Hee;Oh Byung-Hoon
    • Nuclear Engineering and Technology
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    • v.35 no.3
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    • pp.226-233
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    • 2003
  • The discharge characteristics of a prototype ion source was investigated, which was developed and upgraded for the NBI (Neutral Beam Injection) heating system of KSTAR (Korea Superconducting Tokamak Advanced Research). The ion source was designed for the arc discharge of magnetic bucket chamber with multi-pole cusp fields. The ion source was discharged by the emission-limited mode with the control of filament heating voltage. The maximum ion density was 4 times larger than the previous discharge controlled by a space-charge-limited mode with fully heated filament. The plasma (ion) density and arc current were proportional to the filament voltage, but the discharge efficiency was inversely proportional to the operating pressure of hydrogen gas. The maximum ion density and arc current were obtained with constant arc voltage ($80{\sim}100V$), as $8{\times}10^{11}cm^{-3}$ and 1200 A, respectively. The estimated maximum beam current was about 35 A, extracted by the accelerating voltage of 80kV.

MEVVA ion Source And Filtered Thin-Film Deposition System

  • Liu, A.D.;Zhang, H.X.;Zhang, T.H.;Zhang, X.Y.;Wu, X.Y.;Zhang, S.J.;Li, Q.
    • Journal of Korean Vacuum Science & Technology
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    • v.6 no.2
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    • pp.55-57
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    • 2002
  • Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.

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Numerical Modeling of Plasma Characteristics of ICP System with a Pulsed dc Bias (수치모델을 이용한 pulsed dc bias ICP장치의 플라즈마 특성 해석)

  • Joo, Jung-Hoon
    • Journal of the Korean institute of surface engineering
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    • v.43 no.3
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    • pp.154-158
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    • 2010
  • Numerical analysis is done to investigate the effects of pulse bias on the plasma processing characteristics like ion doping and ion nitriding by using fluid dynamic code with a 2D axi-symmetric model. For 10 mTorr of Ar plasma, -1 kV of pulse bias was simulated. Maximum sheath thickness was around 20 mm based on the electric potential profile. The peak electron temperature was about 20 eV, but did not affect the averaged plasma characteristics of the whole chamber. Maximum ion current density incident on the substrate was 200 $A/m^2$ at the center, but was decreased down to 1/10th at radius 100 mm, giving poor radial uniformity.