• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.262.2-262.2
• /
• 2014

Plasma processing is an essential process for pattern etching and thin film deposition in nanoscale semiconductor device fabrication. It is necessary to maintain plasma chamber in steady-state in production. In this study, we determined plasma chamber state with residual gas analysis with self-plasma optical emission spectroscopy. Residual gas monitoring of fluorocarbon plasma etching chamber was performed with self-plasma optical emission spectroscopy (SPOES) and various chemical elements was identified with a SPOES system which is composed of small inductive coupled plasma chamber for glow discharge and optical emission spectroscopy monitoring system for measuring optical emission. This work demonstrates that chamber state can be monitored with SPOES and this technique can potentially help maintenance in production lines.

• Journal of the Korean Society for Heat Treatment
• /
• v.20 no.5
• /
• pp.237-242
• /
• 2007

Friction coefficient of SM45C steel was surprisingly reduced with $H_2S$ and $C_3H_8$ gas during plasma sulf-nitriding. During the plasma sulf-nitriding, 100-700 sccm of $H_2S$ gas and 100 sccm of $C_3H_8$ gas were added and working pressure and temperature were 2 torr, $500-550^{\circ}C$, respectively. As $H_2S$ gas amount increased over 500 sccm, flake-like structures were developed on top of the nitriding layer and grain size of the nitriding layer were about 100 nm. The friction coefficient for the sample treated plasma sulf-nitriding under $N_2-H_2S$ gas was 0.4 - 0.5. The structure became more finer and amorphous-like along with $N_2-H_2S-C_3H_8$ gas and the nano-sized surface microstructures resulted in high hardness and significantly low friction coefficient of 0.2.

• Journal of the Korean Institute of Gas
• /
• v.2 no.3
• /
• pp.60-69
• /
• 1998

Methane, the major constituent of natural gas, had been converted to higher hydrocarbons by microwave and radio-frequency plasma in vacuum condition. Methane had been activated to plasma by suppling high energy then converted to ethane, ethylene, acetylene. The direct conversion process of methane had produced few by-products and demanded low-energy. The plasma sources were microwave and radio-frequency. Two types of reactor had been used to activate methane. One is common single tubular-type reactor and the other is series coil-type reactor which used for the first time in this study. To produce more C2 products, methane had been converted by a plasma and catalyst. The results of this study could be used to study mechanism of plasma reaction of methane, design the plant-scale reactor.

• Bulletin of the Korean Chemical Society
• /
• v.19 no.11
• /
• pp.1172-1174
• /
• 1998

Spatial(radial and height) distributions of excited argon species are measured for an inductively coupled plasma under five operating conditions: 1) no carrier gas, 2) carrier gas without aerosol, 3) carrier gas with desolvated aerosol, 4) carrier gas with aerosol, 5) carrier gas with aerosol and excess lithium. A complete RF power mapping of argon excited states is obtained. The excited states of argon for a typical analytical torch rapidly diffuse towards the center in the higher region of the plasma. The presence of excess lithium makes no significant change in the excited states of argon. The increase in the RF power increases the intensity of argon excited states uniformly across the radial coordinate.

• Proceedings of the KSME Conference
• /
• 2007.05b
• /
• pp.2918-2922
• /
• 2007

This is a report of a feasibility study on the reduction of harmful substances such as particulate matters and nitric oxides emitted from diesel engines by using a plasma reforming system that can generate hydrogen-rich gas. In this paper, an exhaust reduction mechanism of the non-thermal plasma reaction was investigated to perform its efficiency and characteristics on producing hydrogen-rich gas. Firstly, we explain briefly the chemistry of hydrocarbon reforming. The experimental system is showed in the second part. Finally, we demonstrate the feasibility of producing hydrogen using non-thermal plasma. The experimental results are focused on the influence of the different operating parameters (air ratio, inlet flow rates, voltage) on the reformer efficiency and the composition of the produced gas.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.3-6
• /
• 2002

Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure, flow rate, input power density) and various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimization.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.857-861
• /
• 1996

The influence of rf-plasma operation on the thin film formation containing small particles for Al-Li alloys mainly have been studied as a function of Ar gas pressure and plasma power by means of a 200kV transmission electron microscope (TEM). Under the non-plasma operation, the transition from continuous thin films to clusters of grape-like small particles occurred at Ar gas pressures above 20Pa. Particles were single crystals with clear crystal habit planes. Under the plasma operation, the influence of gas pressures on the film formation at a plasma power of 5W was also examined. Thin films containing particles below 30Pa and the films containing mainly particles above 40Pa were formed. The prominent change of the average particle size was not recognized. The increase of the plasma powers at 20Pa, which formed particles under non-plasma, suppressed growth of particles, and homogeneous films containing very small particles were fabricated. The electric conductivity showed slight decrease with an increase of plasma power.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.174-174
• /
• 2012

The nature of feed gas is essential for the active species formed in the nonthermal plasma jets, which would induce various biological phenomena. We investigated the different physiological effects of atmospheric pressure soft-plasma jets on Esherichia coli and blood cells according to the feed gas. Cell death rate, growth curve, membrane molecular changes and induced genes were examined. The relationship between cellular reactions and active species generated by discharge will be discussed.

• Applied Science and Convergence Technology
• /
• v.23 no.4
• /
• pp.169-178
• /
• 2014

Fluid model based numerical analysis is done to simulate a low damage etch back system for 20 nm scale semiconductor fabrication. Etch back should be done conformally with very high material selectivity. One possible mechanism is three steps: reactive radical generation, adsorption and thermal desorption. In this study, plasma generation and transport steps are analyzed by a commercial plasma modeling software package, CFD-ACE+. Ar + $CF_4$ ICP was used as a model and the effect of reactive gas inlet position was investigated in 2D and 3D. At 200~300 mTorr of gas pressure, separated gas inlet scheme is analyzed to work well and generated higher density of F and $F_2$ radicals in the lower chamber region while suppressing ions reach to the wafer by a double layer conducting barrier.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.159-159
• /
• 2013

In this studying, we investigated the basic properties of N-doped plasma polymer. The N-doped plasma polymer thin films were deposited by radio frequency (13.56 MHz) plasma-enhanced chemical vapor deposition method. Various carbon-source were used as organic precursor with hydrogen gas as the precursor bubbler gas. Additionally, ammonia gas [NH3] was used as nitrogen dopant. The as-grown polymerized thin films were analyzed using cyclic voltammetry, ellipsometry, Fourier-transform infrared [FT-IR] spectroscopy, Raman spectroscopy, FE-SEM, and water contact angle measurement. Electronic property of N-doped plasma thin film is changed as flow rate of the NH3 gas.