• 한국광학회:학술대회논문집
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• 한국광학회 1989년도 제4회 파동 및 레이저 학술발표회 4th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.65-69
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• 1989

Mather type dense plasma focus device was develooped for the feasibili쇼 study in its application to the x-ray lithography. To etermine the electrical characteristics,the temporal begavior of the discharge current and the voltage was measured by using the Rogowski coil and the high voltage probe respectively. The results are 9 $\mu\textrm{s}$ of the period, 18m$\Omega$ of resistance and 0.16$\mu$Η of inductance. The average current sheath velocity was measured by the light signal emitted at the moving plasma sheath. The light signal was detected through two fiber bundles. When the applied voltage was 13 kV and the initial jpressure of argon was 21.8 Pa, the best plasma focus was occurred. The x-ray emission characteristics from the plasma focus was determined by the x-ray pictures taken by pinhole camera. It is focus that the plasma was focused at 1.4 cm distant position above the center electrode and its diameter was about 1.0 m.

• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.28-33
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• 2020

Plasma etching process employs high density plasma to create surface chemistry and physical reactions, by which to remove material. Plasma chamber includes silicon-based materials such as a focus ring and gas distribution plate. Focus ring needs to be replaced after a short period. For this reason, there is a need to find materials resistant to erosion by plasma. The developed chemical vapor deposition processing to produce silicon carbide parts with high purity has also supported its widespread use in the plasma etch process. Silicon carbide maintains mechanical strength at high temperature, it have been use to chamber parts for plasma. Recently, besides the structural aspects of silicon carbide, its electrical conductivity and possibly its enhanced life time under high density plasma with less generation of contamination particles are drawing attention for use in applications such as upper electrode or focus rings, which have been made of silicon for a long time. However, especially for high purity silicon carbide focus ring, which has usually been made by the chemical vapor deposition method, there has been no study about quality improvement. The goal of this study is to reduce surface roughness and depth of damage by diamond tool grit size and tool dressing of diamond tools for precise dimensional assurance of focus rings.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.178.2-178.2
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• 2013

Conventional ultraviolets A,B,C are known to be very important factor of killing, changing surface properties of biological cells and materials. It is of great importance to investigate the influence of extreme ultraviolet (EUV) exposure on the biological cell. Here we have studied high density EUV plasma and its emission characteristics, which have been generated by plasma focus device with hypercycloidal pinch (HCP) electrode under various Ar gas pressures ranged from 30~500 mTorr in this experiment. We have also measured the plasma characteristics generated from the HCP plasma focus device such as electron temperature by the Boltzman plot, plasma density by the Stark broading method, discharge images by open-shuttered pin hole camera, and EUV emission signals by using the photodiode AXUV-100 Zr/C.

• Nuclear Engineering and Technology
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• 제52권5호
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• pp.1002-1007
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• 2020

The purpose of the current study was to evaluate a spectrum formulation set employed to modify the neutron spectrum of D-D fusion neutrons in a IS plasma focus device using GEANT4, MCNPX2.6, and FLUKA codes. The set consists of a moderator, reflector, collimator and filters of fast neutron and gamma radiation, which placed on the path of 2.45 MeV neutron energy. The treated neutrons eliminate cancerous tissue with minimal damage to other healthy tissue in a method called neutron therapy. The system optimized for a total neutron yield of 10⁹ (n/s). The numerical results indicate that the GEANT4 code for the cubic geometry in the Beam Shaping Assembly 3 (BSA3) is the best choice for the energy of epithermal neutrons.

• 한국재료학회지
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• 제17권6호
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• pp.308-312
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• 2007

Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mathertyped plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed finer grain structure at lower pressure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.108-108
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• 2010

We have generated Ne-Xe plasma in dense plasma focus device with hypocycloidal pinch for extreme ultraviolet (EUV) lithography and investigated an electron temperature. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ne-Xe(30%) gas in accordance with pressure. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature of the hypocycloidal pinch plasma focus could be obtained by the optical emission spectroscopy (OES). The electron temperature has been measured by Boltzmann plot. The light intensity is proportion to the Bolzman factor. We have been measured the electron temperature by observation of relative Ne-Xe intensity. The EUV emission signal whose wavelength is about 6~16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD) and the line intensity has been detected by using a HR4000CG Composite-grating Spectrometer.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2153-2155
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• 2005

SF6 &NF3 chemistry를 사용하여 W bitline process 조건에서 plasma confinement 및 gas & radical의 flow에 영향을 미치는 focus ring 재질과 두께변경을 하여 Rnit non uniformity 평가한다.

• 한국광학회지
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• 제1권1호
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• pp.65-72
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• 1990

최대 10kJ의 에너지를 공급할 수 있는 Mather형 플라즈마 집속장치를 설계, 제작하였다. 이 DPF 장치의 전기 방전 특성을 알기 위해 Rogowski 코일을 제작하고 방전전류, 전압을 측정하여 본 system 의 저항과 인덕턴스는 각각 $20m\Omega과 0.2{\mu}H로 밝혀졌다. 플라즈마 전류 sheath의 이동속도는 충전개스 압력과 전압에 따라 $P^{-0.25}\timesV^{0.38}$의 함수로 비례하며 집속된 플라즈마의 크기는 직경 3mm, 길이 17mm로 밝혀졌다.

• Nuclear Engineering and Technology
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• 제12권3호
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• pp.163-170
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• 1980

4KJ의 에너지 뱅크(16.5KV, 35nH)를 사용하여 Mather형의 플라즈마총을 1 torr이하의 낮은 기체압력에서 동작시키면서 플라즈마의 효율적인 집속조건을 구하였다. 중수소기체의 충전압력이 0.18torr, 저장에너지가 3.8KJ일때 방전전류의 최고치는 180KA이었고 플라즈마의 축방향 평균속도는 약 $7cm/\mu\textrm{s}$이었다. 이것은 snowplow모델에 의해 계산된 속도보다 작은 값인데 이는 절연재 표면을 통한 전류의 손실에 기인하는 것으로 생각된다. H. Bruzzone의 플라즈마 집속장치(1KJ, 16KV, $4.2\mu\textrm{s}$)에 비해 본 실험에서는 기체압력이 낮은 역역에서 플라즈마 접속이 일어났다. 이는 이 실험에서 사용한 플라즈마총의 크기가 저장에너지에 비해 크고 또 잔여기체의 함량이 비교적 높기 때문이다. 집속된 플라즈마로 부터 방출되는 중성자는 Long counter를 사용해서 계측했다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.475-475
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• 2010

We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.