• Proceedings of the Optical Society of Korea Conference
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• 1989.02a
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• pp.65-69
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• 1989

Mather type dense plasma focus device was develooped for the feasibili쇼 study in its application to the x-ray lithography. To etermine the electrical characteristics,the temporal begavior of the discharge current and the voltage was measured by using the Rogowski coil and the high voltage probe respectively. The results are 9 $\mu\textrm{s}$ of the period, 18m$\Omega$ of resistance and 0.16$\mu$Η of inductance. The average current sheath velocity was measured by the light signal emitted at the moving plasma sheath. The light signal was detected through two fiber bundles. When the applied voltage was 13 kV and the initial jpressure of argon was 21.8 Pa, the best plasma focus was occurred. The x-ray emission characteristics from the plasma focus was determined by the x-ray pictures taken by pinhole camera. It is focus that the plasma was focused at 1.4 cm distant position above the center electrode and its diameter was about 1.0 m.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.28-33
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• 2020

Plasma etching process employs high density plasma to create surface chemistry and physical reactions, by which to remove material. Plasma chamber includes silicon-based materials such as a focus ring and gas distribution plate. Focus ring needs to be replaced after a short period. For this reason, there is a need to find materials resistant to erosion by plasma. The developed chemical vapor deposition processing to produce silicon carbide parts with high purity has also supported its widespread use in the plasma etch process. Silicon carbide maintains mechanical strength at high temperature, it have been use to chamber parts for plasma. Recently, besides the structural aspects of silicon carbide, its electrical conductivity and possibly its enhanced life time under high density plasma with less generation of contamination particles are drawing attention for use in applications such as upper electrode or focus rings, which have been made of silicon for a long time. However, especially for high purity silicon carbide focus ring, which has usually been made by the chemical vapor deposition method, there has been no study about quality improvement. The goal of this study is to reduce surface roughness and depth of damage by diamond tool grit size and tool dressing of diamond tools for precise dimensional assurance of focus rings.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.178.2-178.2
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• 2013

Conventional ultraviolets A,B,C are known to be very important factor of killing, changing surface properties of biological cells and materials. It is of great importance to investigate the influence of extreme ultraviolet (EUV) exposure on the biological cell. Here we have studied high density EUV plasma and its emission characteristics, which have been generated by plasma focus device with hypercycloidal pinch (HCP) electrode under various Ar gas pressures ranged from 30~500 mTorr in this experiment. We have also measured the plasma characteristics generated from the HCP plasma focus device such as electron temperature by the Boltzman plot, plasma density by the Stark broading method, discharge images by open-shuttered pin hole camera, and EUV emission signals by using the photodiode AXUV-100 Zr/C.

• Nuclear Engineering and Technology
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• v.52 no.5
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• pp.1002-1007
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• 2020

The purpose of the current study was to evaluate a spectrum formulation set employed to modify the neutron spectrum of D-D fusion neutrons in a IS plasma focus device using GEANT4, MCNPX2.6, and FLUKA codes. The set consists of a moderator, reflector, collimator and filters of fast neutron and gamma radiation, which placed on the path of 2.45 MeV neutron energy. The treated neutrons eliminate cancerous tissue with minimal damage to other healthy tissue in a method called neutron therapy. The system optimized for a total neutron yield of 10⁹ (n/s). The numerical results indicate that the GEANT4 code for the cubic geometry in the Beam Shaping Assembly 3 (BSA3) is the best choice for the energy of epithermal neutrons.

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.308-312
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• 2007

Chromium oxide thin films have been deposited on silicon substrates using a tabletop 9kJ mathertyped plasma focus (PF) device. Before deposition, pinch behavior with gas pressure was observed. Strength of pinches was increased with increasing working pressure. Deposition was performed at room temperature as a function of working pressure between 50 and 1000 mTorr. Composition and surface morphology of the films were analyzed by Auger Electron Spectroscopy and Scanning Electron Microscope, respectively. Growth rates of the films were decreased with pressure. The oxide films were polycrystalline containing some impurities, Cu, Fe, C and revealed finer grain structure at lower pressure.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.108-108
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• 2010

We have generated Ne-Xe plasma in dense plasma focus device with hypocycloidal pinch for extreme ultraviolet (EUV) lithography and investigated an electron temperature. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ne-Xe(30%) gas in accordance with pressure. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature of the hypocycloidal pinch plasma focus could be obtained by the optical emission spectroscopy (OES). The electron temperature has been measured by Boltzmann plot. The light intensity is proportion to the Bolzman factor. We have been measured the electron temperature by observation of relative Ne-Xe intensity. The EUV emission signal whose wavelength is about 6~16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD) and the line intensity has been detected by using a HR4000CG Composite-grating Spectrometer.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2153-2155
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• 2005

SF6 &NF3 chemistry를 사용하여 W bitline process 조건에서 plasma confinement 및 gas & radical의 flow에 영향을 미치는 focus ring 재질과 두께변경을 하여 Rnit non uniformity 평가한다.

• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.65-72
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• 1990

Mather type plasma focus system is designed and fabricated, and its electrical behaviors and the ,~haracteristics of the plasma are investigated. The discharge CUlTent is measured with a Rogowski coil, and the external resistance and inductance of the system are found to be $20m\Omega, 0.2{\mu}H respectively from the measured voltage signals and current signals, and discharge inductance, magnetic, and mechanical energy are calculated. 'i'he speed of the plasma current sheath in the acceleration phase is found to vary as $P^{-0.25}\timesV^{0.38}$ and its value is about is 106 cm/sec. The electron temperature in the plasma is determined from the measurement of the X-ray transmittance with the number of X-ray filters and its value is found to be about I keY. The size of plasma, measured using X-ray pin-hole camera, is about 17 (dia.) x 30 (length)mm2. h)mm2.

• Nuclear Engineering and Technology
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• v.12 no.3
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• pp.163-170
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• 1980

A Mather type plasms gun is operated at below 1 torr with a energy storage system (4KJ, 16.5KV, 35nH) to study the conditions of the efficient plasma focus. When the $D_2$ gas filling pressure is 0.18 torr and the stored energy is 3.8KJ, the discharge current of max. 180KA is obtained and the average axial velocity of the plasma is about $7cm/\mu\textrm{s}$. This is lower than the calculated velocity with above conditions by the snow-plow model. The discrepancy is due to the currents flowing over the insulator surface. The plasma focus occurs at low pressure compared with the results obtained by Bruzzone. The reasons are such that the plasma gun employed in this experiment is large for tile stored energy and the concentration of the residual gas is comparatively high. It is confirmed by a Long counter that the neutrons are generated from the dense plasma focus.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.475-475
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• 2010

We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.