• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.5
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• pp.802-808
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• 1994

The purpose of this paper is to describe an application of plasma polymerized thin film as an electron beam resist. Plasma polymerized thin film was prepared using an interelectrode capacitively coupled gas-flow-type reactor, and chosen methylmethacrylate(MMA)and methylmethacrylate-tetrameth-yltin(MMA-TMT) as a monomer. This thin films were also delineated by the electron-beam apparatus with an acceleration voltage of 30kV and an expose dose ranging from 20 to 900$\mu$C/cmS02T. The delineated pattern in the resist was developed with the same reactor which is used for polymerization using an argon as etching gas. The growth rate and etching rate of the thin film is increased with increasing of discharge power. Thin films by plasma polymerization show polymerization rate of 30~45($\pm$3) A/min, and etching rate of 440($\pm$30) A/min during Ar plasma etching at discharge power of 100W. In apparently lower than that of conventional PMMA, but the plasma-etching rate of PP(MMA-TMT) was higher than that of PPMMA.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.262.1-262.1
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• 2014

Lipid peroxidation induces functional deterioration of cell membrane and induces cell death in extreme cases. These phenomena are known to be related generally to the change of physical properties of lipid membrane such as decreased lipid order or increased water penetration. Even though the electric property of lipid membrane is important, there has been no report about the change of electric properties after lipid peroxidation. Herein, we demonstrate the molecular energy band change in red blood cell membrane through peroxidation by air-based atmospheric pressure DBD plasma treatment. Ion-induced secondary electron emission coefficient (${\gamma}$ value) was measured by using home-made gamma-focused ion beam (${\gamma}$-FIB) system and electron energy band was calculated based on the quantum mechanical Auger neutralization theory. The oxidized lipids showed higher gamma values and lower electron work functions, which implies the change of surface charging or electrical conductance. This result suggests that modified electrical properties should play a role in cell signaling under oxidative stress.

• Proceedings of the KWS Conference
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• 1995.10a
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• pp.180-186
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• 1995

• Proceedings of the Optical Society of Korea Conference
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• 2002.07a
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• pp.240-241
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• 2002

Propagation of an intense laser pulse through fully ionized plasma has been an interesting topic in many fields. It includes laser-driven electron accelerators,(1) generation of high harmonics,(2) soft x-ray laser development(3) and so on. Specifically, in the application of laser-driven electron accelerators a large laser-plasma interaction length is required to get sufficient acceleration energy of electron. (omitted)

• Journal of Advanced Marine Engineering and Technology
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• v.23 no.4
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• pp.514-522
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• 1999

The laser-induced plasma affects greatly on the results of welding process. moreover selective evaporation loss of alloying elements leads to change in chemical composition of weld metal as well as the mechanical properties of welded joint. this study was undertaken to obtain a fundamental knowledge of pulsed laser welding phenomena especially evaporation mechanism of different aluminum alloys. The intensities of molecular spectra of AlO and MgO were different each other depeding on the power density of a laser beam Under the low power density condition the MgO band spectrum was predominant in intensity while the AlO spectra became much stronger with an increase in the power density. These behaviors have been attributed to the difference in evaporation phenomena of Al and Mg metals with different boiling points and latent heats of vaporization. The time-averaged plasma temperature and electron number density were determined by spectroscopic methods and consequently the obtained temperature was $3,280{\pm}150K$ and the electron number density was $1.85{\times}10^{19}\;l/m^3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.268-269
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• 2008

Charging of spacecraft occurs in plasma and radiation environment. Especially, we focused on an accident caused by internal charging in a glass material that was used as the cover plate of solar panel array, and tried to measure the charge distribution in glass materials under electron beam irradiation by using a PEA (Pulsed Electro-Acoustic method) system. In the case of a quartz glass (pure $SiO_2$), no charge accumulation was observed either during or after the electron beam irradiation. On the contrary, positive charge accumulation was observed in glass samples containing metal-oxide components. It is found that the polarity of the observed charges depends on the contents of the impurities. To identify which impurity dominates the polarity of the accumulated charge, we measured charge distributions in several glass materials containing various metal-oxide components and calculated the trap energy depths from the charge decay characteristics of all glass samples.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.4
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• pp.400-406
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• 2015

This study researched the structure of the source of an ion milling machine used to fabricate a scanning electron microscope (SEM) sample. An ion source is used to mill out samples of over 1 mm dimension using a broad ion beam to generate plasma between the anode and cathode using a permanent magnet. To mill the sample in the vacuum chamber, the ion source should be greater than 6 kV for a positive ion current over $200{\mu}A$. To discover the optimum operating conditions for the ion miller, the diameter of the extractor, anode shape, and strength of the permanent magnet were varied in the experiments. A silicon wafer was used as the sample. The sputter yield was measured on the milled surface, which was analyzed using the SEM. The wafer was milled by injecting 1 sccm of argon gas into the 0.5 mTorr vacuum chamber.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.828-833
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• 2000

Growth characteristics and microstructure of AIN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the micorstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.111-114
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• 2000

Growth characteristics and microstructure of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• 한국가시화정보학회:학술대회논문집
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• 2002.11a
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• pp.39-42
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• 2002

In the current study, characteristics of the laser-induced plasma were investigated in a gas filled chamber or in a gas jet by using a relatively low intensity laser $(I\;\leq\;5\;\times\;10^{12}\;W/cm^2)$. Temporal evolutions of the produced plasma were measured using the shadow visualization and the shock wave propagation as well as the electron density profiles in the plasma channel was measured using the Mach-Zehnder interferometry. Experimental results such as the structure of the produced plasma, shock propagation speed $(V_s)$, electron density profiles $(n_e)$, and the electron temperature $(T_e)$ are discussed in this study. Since the diagnostic laser pulse occurs over short time intervals compared to the hydrodynamic time scales of expanding plasma or a gas jet, all the transient motion occurring during the measurement is assumed to be essentially frozen. Therefore, temporally well-resolved quantitative measurements were possible in this study.