• 한국기계가공학회지
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• 제18권7호
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• pp.97-103
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• 2019

Mn+1AXn (MAX) phases are a family of nano-laminated compounds that possess unique combination of typical ceramic properties and typical metallic properties. As a member of MAX-phase, $Ti_2AlN$ bulk materials are attractive for some high temperature applications. In this study, $Ti_2AlN$ bulk with high density were synthesized by spark plasma sintering method. X-ray diffraction, micro-hardness, electrical and thermal conductivity were measured to compare the effect of material properties both $Ti_2AlN$ bulk samples and a conventional Ti-6Al-4V alloy. A femto-second laser conditions were conducted at a repetition rate of 6 kHz and laser intensity of 50 %, 70% and 90 %, respectively, laser confocal microscope were used to evaluate the width and depth of ablation. Consequently, the laser ablation result of the $Ti_2AlN$ sample than that of the Ti-6Al-4V alloys show a considerably good ablation characteristics due to its higher thermal conductivity regardless of to high densification and high hardness.

• 동력기계공학회지
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• 제4권4호
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• pp.48-53
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• 2000

This study was aimed at observing the influence of laser irradiation on a $ZrO_2-8%Y_2O_3$ ceramic coating layer fabricated by plasma spraying. The $ZrO_2-8%Y_2O_3$ ceramic powder was plasma sprayed onto SS400 carbon steel substrate and laser irradiated on the coating layer under various conditions of laser power and beam diameters. As to the as-sprayed specimen and laser-treated specimen, a hardness test and a microstructure analysis were performed. Hardness was measured by a microhardness tester; microstructure was observed by an optical microscope and a scanning electron microscope. The result was that the microstructure of the laser-irradiated coating layer was dense; porosities almost disappeared and hardness increased. It was also observed that microcracks occured in the laser-irradiated coating layer.

• Journal of the Optical Society of Korea
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• 제13권1호
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• pp.8-14
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• 2009

In a laser-plasma wakefield accelerator, the ponderomotive force of an ultrashort high intensity laser pulse excites a longitudinal wave or plasma bubble in a way similar to the excitation of a wake wave behind a boat as it propagates on the water surface. Electric fields inside the plasma bubble can be several orders of magnitude higher than those available in conventional RF-based particle accelerator facilities which are limited by material breakdown. Therefore, if an electron bunch is properly phase-locked with the bubble's acceleration field, it can gain relativistic energies within an extremely short distance. Here, in the bubble regime we show the generation of stable and reproducible sub GeV, and GeV-class electron beams. Supported by three-dimensional particle-in-cell simulations, our experimental results show the highest acceleration gradients produced so far. Simulations suggested that the plasma bubble elongation should be minimized in order to achieve higher electron beam energies.

• Composites Research
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• 제34권1호
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• pp.23-29
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• 2021

탄소섬유는 단위 중량 당 높은 강도 및 모듈러스를 갖기 때문에 고성능 복합 재료 제조 시 탄소보강재로 많이 사용된다. 그러나 탄소 섬유를 제조하는 공정에서 많은 시간과 높은 에너지를 소모하여 제조비용이 크게 증가하기 때문에 상용화에 어려움을 겪고 있다. 따라서 생산 비용 절감을 위하여 제조 공정에 사용되는 에너지를 대체할 수 있는 고속의 저 에너지원을 적극적으로 찾아 연구할 필요가 높아졌다. 폴리아크릴로니트릴(PAN) 전구체(Precursor)로 상용화 된 탄소 섬유는 180~300℃의 대기 분위기에서 안정화 과정이 이루어지고, 1600℃ 이하의 불활성 가스 분위기에서 탄화하여 탄소 섬유를 생산할 수 있다. 이 두 공정은 많은 시간과 높은 에너지를 사용하지만, 고성능 탄소 섬유를 생산하는 데 필수적이며 중요하다. 따라서 최근에는 공정 시간을 단축하고 에너지 소비를 줄일 수 있는 플라즈마, 전자 빔 및 마이크로파와 같은 다양한 다른 에너지원을 보조적으로 사용 함으로써 저 에너지·고속 안정화 공정 기술이 시도되고 있다. 본 연구에서는 플라즈마 공정과 열처리를 연속적으로 수행하여 PAN 전구체 안정화 공정을 연구하였으며, 모폴로지, 구조적 변화, 열적 및 물리적 특성 변화를 연구하였다.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2004년도 학술대회지
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• pp.301-305
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• 2004

Effects of ion implantation on the adhesion strength of DLC film as a function of ion doses and implanted energies were investigated. Ti ions were implanted on the Si-wafer substrates followed by DLC coating using ion beam deposition method. Adhesion strength of DLC films were determined by scratch adhesion tester. Morphologies and compositional variations at the different ion energies and doses were observer by Laser Microscope and Auger Electron Spectroscopy, respectively. From results of scratch test, the adhesion strength of films was improved as increasing ion implanted energy, however there was no significant evidence with ion dose.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.935-938
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• 2001

Carbon nanotubes(CNTs) was successfully grown on Ni coated silicon wafer substrate by applying PECVD technique(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15∼30nm was prepared by electron beam evaporator method. In order to find the optimum growth condition, the type of the gas mixture such as C$_2$H$_2$-NH$_3$was systematically investigated by adjusting the gas mixing ratio in temperature of 600$^{\circ}C$ under the pressure of 0.4 torr. The diameter of the grown CNTs was 40∼150nm. As NH$_3$etching time increased the diameters of the nanotubes decreased whereas the density of nanotubes increased. TEM images clearly demonstrated synthesized nanotubes was multiwalled. We investigated electrical properties for the application of FED.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 B
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• pp.723-725
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• 2001

Ion plating method using plasma is faster as several times than electron beam plating method in plating process. Recently, a variety of techniques for this method are being researched. In this paper to produce sheet plasma with high density for ion plating we designed magnetic circuit of MgO plating device consisting of solenoid coil, rectangular permanent magnet. And, we researched on the effect of those by analyzing magnetic field distribution using FEM.

• 전기의세계
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• 제29권2호
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• pp.118-128
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• 1980

The properties of plasmas produced by high power glass laser were investigated with various methods of diagnostics. Electron temperature was estimated by measurement of soft X-ray, and ion temperature was estimated by measurement of the time-of-flight of ion. The measurement of incident and reflected laser light, and Schlieren and shadowgragh methods were also used. No influence of laser pulse duration on the temperature was observed in the case of durations 2, 4 and 10 nsecs. The effective heating of plasma occurred in about 2 nsec of beginning of incident laser pulse. The experimental results for fast rising laser pulse were discussed and the influence of resetime of laser pulse on the heating of plasma was described. Neutrons produced by irradiating laser beam to solid deuterium target were detected.

• Journal of the Optical Society of Korea
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• 제18권3호
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• pp.283-287
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• 2014

Square lattice nano-hole arrays with diameters and periodicities of 200 and 500 nm, respectively, are fabricated on InGaN/GaN blue light emitting diodes (LEDs) using electron-beam lithography and inductively coupled plasma reactive ion etching processes. Cathodoluminescence (CL) investigations show that light emission intensity from the LEDs with the nano-hole arrays is enhanced compared to that from the planar sample. The CL intensity enhancement factor decreases when the nano-holes penetrate into the multiple quantum wells (MQWs) due to the plasma-induced damage and the residues. Wet chemical treatment using KOH solution is found to be an effective method for light extraction from the nano-patterned LEDs, especially, when the nano-holes penetrate into the MQWs. About 4-fold CL intensity enhancement factor is achieved by the KOH treatments after the dry etching for the sample with a 250-nm deep nano-hole array.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제11회 학술발표회 논문개요집
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)