• 제목/요약/키워드: Plasma blue light source

검색결과 8건 처리시간 0.028초

Luminescence Property of ZnS:Mn,Mg Phosphor with Excitation of Plasma Blue Light Source

  • Ryu, Si Hong;Kim, Wan Kyu;Lee, Seong Eui
    • Transactions on Electrical and Electronic Materials
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    • 제14권1호
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    • pp.24-27
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    • 2013
  • In this paper, we investigated the effect of luminescence properties of various concentrations of magnesium-doped ZnS:Mn phosphor excited by plasma luminescence device. The PL intensity was evaluated in the range of 300~500 nm excitation wavelengths. We found the highest PL intensity of the phosphors excited by 365 nm and 450 nm was observed at Mg concentrations of 1.4 wt% and 0.8 wt%, respectively. In addition, an emission peak was distinguished at 580 nm wavelength. With increasing Mg dopant level, enhanced PL intensity was observed, which is possibly applicable to color converting materials by blue emission for white light sources. Finally, we evaluated the luminance properties of color converting ZnS:Mn,Mg phosphors with plasma blue light source. the white luminance of plasma light source with CIE(0.36,0.26) was established by color converting phosphors of ZnS:Mn with 0.8 wt% Mg.

Effect of light source on depth of cure and polymerization shrinkage of composites

  • Na, Joon-Sok;Oh, Won-Mann;Hwang, In-Nam
    • 대한치과보존학회:학술대회논문집
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    • 대한치과보존학회 2001년도 추계학술대회(제116회) 및 13회 Workshop 제3회 한ㆍ일 치과보존학회 공동학술대회 초록집
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    • pp.578.1-578
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    • 2001
  • The aim of this study was to evaluate the efficiency of the recently introduced light curing units to polymerize a light curing resin composite. Four light curing units XL 3000, Optilux 500 for halogen light source, Apollo 95E for plasma arc and Easy cure for LED (blue-light Emitting Diode) were evaluated. Radiometer was used for measure the light intensity.(omitted)

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Quantum Dot LED를 이용한 상추 주요 병원성 곰팡이 및 세균의 생장억제효과 기내실험 (In Vitro Quantum Dot LED to Inhibit the Growth of Major Pathogenic Fungi and Bacteria in Lettuce)

  • 이현구;김상우;마헤시 아드히카리;순 쿠말 구룽;세투 바지에;산 꼬설;권병헌;주한준;고영욱;김용득;유용환;박태희;신정철;김민하;이윤수
    • 식물병연구
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    • 제25권3호
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    • pp.114-123
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    • 2019
  • Quantum Dot LED (QD LED) 조명은 소형의 크기, 좁은 대역파장, 긴 수명, 전자 시스템을 통한 제어가 용이하여 현재 시설재배에 이용되는 형광등, 할로겐램프, HID, HSP 램프의 단점을 보완할 수 있는 작물생육에 이상적인 광원으로서 잠재력을 가지고 있다. QD LED 조명을 이용하여 식물 병원성 미생물의 방제가 가능하다면 작물재배에 사용되는 인력 및 비용을 절감하고 화학적 방제제를 사용하지 않은 안전성 높은 생산물을 얻을 수 있다는 장점이 있다. 본 연구에서는 식물공장 및 온실에서 많이 재배되고 있는 상추에 큰 피해를 입히는 주요 식물 병원성 곰팡이에 대한 QD LED 조명의 영향과 생장억제효과를 확인하기 위해 시행하였다. 상추에 주로 발생하여 작물에 피해를 입히는 Rhizoctonia solani, Phytophthora drechsleri, Sclerotinia sclerotiorum, Sclerotinia minor, Botrytis cinerea, Fusarium oxysporum, Pectobacterium carotovorum, Xanthomonas campestris균을대상으로 QD LED 조명에 의한 균사생장억제 효과를 조사하였으며 처리한 6종류의 조명 중 BLUE (450 nm) 조명은 Sclerotinia sclerotiorum는 50 cm 거리에서 16.7%의 억제율을 보였으며 30 cm 거리에서 94.1%의 균사생장억제율을 보였다. S. minor는 50 cm 거리에서 80.4%, B. cinerea는 50 cm 거리에서 36.3%의 균사생장이 억제되었으며 30 cm 거리에서 S. minor와 B. cinerea는 100%의 균사생장억제율을 보였다. 15 cm 거리에서는 3종의 병원균 모두 100%의 억제율을 보였다. QD RED (M1), QD RED (M2)조명은 30 cm와 15 cm 거리에서 Sclerotinia minor와 Botrytis cinerea의 균사생장을 100% 억제했으며 Sclerotinia sclerotiorum의 경우 30 cm 거리에서 QD RED (M1)과 QD RED (M2)조명에 대해 각각 75.2%, 100%의 억제율을 보였으나 15 cm 거리에서는 각각 5.8%, 36.3%의 억제율을 보였다. 상추에 병원균을 접종하여 LED 광원 하에 생장을 확인한 결과 QD RED (M2)광원에서 S. sclerotiorum의 감염을 59.9% 억제하였고 S. minor는 BLUE (450 nm), QD RED (M1), QD RED (M2) 광원에서 59.9%의 억제율을 보였다. B. cinerea의 경우 BLUE (450 nm) 광원에서 84%의 높은 억제율을 보였다.

New LEDs improve the quality of illumination of full-color holograms recorded with red 660 nm, green 532 nm and blue 440 nm lasers

  • Gentet, Philippe;Gentet, Yves;Joung, Jinbeom;Park, Sungchul;Park, Misoo;Lee, Seunghyun
    • International Journal of Advanced Culture Technology
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    • 제7권4호
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    • pp.274-282
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    • 2019
  • This paper discusses the main requirements in today's full-color holograms illumination and evaluates the last generation of LEDs, the actual best light source to render properly the colors of the holograms and in particular those recorded with red 660 nm, green 532 nm and blue 440 nm lasers. This paper presents also the first prototype of lamp designed especially for this kind of holograms.

Nanophotonics of Hexagonal Lattice GaN Crystals Fabricated using an Electron Beam Nanolithography Process

  • Lee, In-Goo;Kim, Keun-Joo;Jeon, Sang-Cheol;Kim, Jin-Soo;Lee, Hee-Mok
    • International Journal of Precision Engineering and Manufacturing
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    • 제7권4호
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    • pp.14-17
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    • 2006
  • A thin GaN semiconducting film that grows on sapphires due to metalorganic chemical vapor deposition was machined for nanophotonic applications. The thin film had multilayered superlattice structures, including nanoscaled InGaN layers. Eight alternating InGaN/GaN multilayers provided a blue light emission source. Nanoscaled holes, 150 nm in diameter, were patterned on polymethylmethacrylate (PMMA) film using an electron beam lithography system. The PMMA film blocked the etching species. Air holes, 75 nm in diameter, which acted as blue light diffraction sources, were etched on the top GaN layer by an inductively coupled plasma etcher. Hexagonal lattice photonic crystals were fabricated with 230-, 460-, 690-, and 920-nm pitches. The 450-nm wavelength blue light provided the nanodiffraction destructive and constructive interferences phenomena, which were dependent on the pitch of the holes.

유도결합형 플라즈마 식각공정을 통해 제작된 460 nm 격자를 갖는 나노 광결정 특성 (Fabrication of Nano-photonic Crystals with Lattice Constant of 460-nm by Inductively-coupled Plasma Etching Process)

  • 최재호;김근주
    • 반도체디스플레이기술학회지
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    • 제5권2호
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    • pp.1-5
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    • 2006
  • The GaN thin film on the 8 periods InGaN/GaN multi-quantum well structure was grown on the sapphire substrate using metal-organic chemical vapor deposition. The nano-scaled triangular-lattice holes with the diameter of 150 nm were patterned on a polymethylmethacrylate blocking film using an electron beam nano-lithography system. The thin slab and two-dimensional photonic crystals with the thickness of 28 nm were fabricated on the GaN layer for the blue light diffraction sources. The photonic crystal with the lattice parameter of 460 nm enhances spectral intensity of photoluminescence indicating that the photonic crystals provides the source of nano-diffraction for the blue light of the 450-nm wavelength.

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발광플라즈마 처리에 의한 들깨 부위별 항산화 및 Tyrosinase 저해 활성 효과 (Antioxidant and Tyrosinase Inhibition Activity Promoting Effects of Perilla by the Light Emitting Plasma)

  • 유지혜;최재후;강병주;전미란;이찬옥;김창흠;성은수;허권;유창연;최선강
    • 한국약용작물학회지
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    • 제25권1호
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    • pp.37-44
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    • 2017
  • Background: The light emitting plasma (LEP) has recently attracted attention as a novel artificial light source for plant growth and functional component enhancement. We investigated the effects of LEP on whitening and antioxidant activities of the plant parts of perilla. Methods and Results: Previously germianted seeds of perilla were cultivated under different light conditions (fluoresce lamp, LED red, blue, white, green, and LEP) in a culture room for 2 months. Parts of perilla were harvested and extracted in 70% EtOH. The extracts were used to detect total phenolic contents, total flavonoid contents, 2,2-diphenyl-1-picrylhydrazyl (DPPH), 2,2'-azino-bis-3-ethylbenzothiazoline-6-sulfonic acid (ABTS), reducing power and tyrosinase inhibition activity as indicators of biological activity. Biological activity was highest in seedlings grown under LEP. The total phenolic content was highest in the stems and the total flavonoid content was highest in the roots of perilla exposed to LEP. The DPPH and ABTS radical activity in all the parts of perilla exposed to LEP were higher by approximately three-fold compared to that in the control (fluoresce lamp). The reducing power values of perilla significantly increased after treatment with LEP. In addition, all the extract of perilla plants exposed to LEP promoted the tyrosinase inhibitory activity. These results suggest that LEP can be an important artificial light source for enhancement of biological activity. Conclusions: LEP could promote whitening and antioxidant activity of perilla.

Growth of zinc oxide thin films by oxygen plasma-assisted pulsed laser deposition

  • Pak, Sang-Woo;Suh, Joo-Young;Lee, Dong-Uk;Kim, Eun-Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.208-208
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    • 2010
  • Zinc oxide (ZnO) is a functional material with interesting optical and electrical properties, a wide band gap (more than 3.3 eV), a high transmittance in the visible light region, piezoelectric properties, and a high n-type conductivity. This material has been investigated for use in many applications, such as transparent electrodes, blue light-emitting diodes, and ultra-violet detector. ZnO films grown under low oxygen pressure by thin film deposition methods show low resistivity and large free electron concentration. Therefore, reducing the background carrier concentration in ZnO films is one of the major challenges ahead of realizing high-performance ZnO-based optoelectronic devices. In this study, we deposited ZnO thin films on sapphire substrates by pulsed laser deposition (PLD) with employing an oxygen plasma source to decrease the background free-electron concentration and enhance the crystalline quality. Then, the substrate temperature was varied between 200 'C to 900 'C The vacuum chamber was initially evacuated to a pressure of $10^{-6}$ Torr, and then a pure $O_2$ gas was introduced into the chamber and the pressure during deposition was maintained at $10^{-2}$ Torr. Crystallinity and orientation of ZnO films were investigated by X-ray diffraction (XRD). The film surface was analyzed with atomic force microscope (AFM). And electrical properties were measured at room temperature by Hall measurement.

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