• Transactions on Electrical and Electronic Materials
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• v.14 no.1
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• pp.24-27
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• 2013

In this paper, we investigated the effect of luminescence properties of various concentrations of magnesium-doped ZnS:Mn phosphor excited by plasma luminescence device. The PL intensity was evaluated in the range of 300~500 nm excitation wavelengths. We found the highest PL intensity of the phosphors excited by 365 nm and 450 nm was observed at Mg concentrations of 1.4 wt% and 0.8 wt%, respectively. In addition, an emission peak was distinguished at 580 nm wavelength. With increasing Mg dopant level, enhanced PL intensity was observed, which is possibly applicable to color converting materials by blue emission for white light sources. Finally, we evaluated the luminance properties of color converting ZnS:Mn,Mg phosphors with plasma blue light source. the white luminance of plasma light source with CIE(0.36,0.26) was established by color converting phosphors of ZnS:Mn with 0.8 wt% Mg.

• Proceedings of the KACD Conference
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• 2001.11a
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• pp.578.1-578
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• 2001

The aim of this study was to evaluate the efficiency of the recently introduced light curing units to polymerize a light curing resin composite. Four light curing units XL 3000, Optilux 500 for halogen light source, Apollo 95E for plasma arc and Easy cure for LED (blue-light Emitting Diode) were evaluated. Radiometer was used for measure the light intensity.(omitted)

• Research in Plant Disease
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• v.25 no.3
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• pp.114-123
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• 2019

QD LED has an ideal light source for growing crops and can also be used to control plant pathogenic microorganisms. The mycelial growth inhibition effect of QD LED light on Rhizoctonia solani, Phytophthora drechsleri, Sclerotinia sclerotiorum, Sclerotinia minor, Botrytis cinerea, Fusarium oxysporum, Pectobacterium carotovorum, and Xanthomonas campestris were investigated. According to the results, BLUE (450 nm) light, suppressed S. sclerotiorum by 16.7% at 50 cm height from the light source, and 94.1% mycelial growth at 30 cm height. Mycelial growth of Sclerotinia minor was inhibited by 80.4% at 50 cm height and 36.3% at 50 cm height in B. cinerea. S. minor, and B. cinerea was inhibited by 100% mycelial growth at a height of 30 cm from the light source. At 15 cm height, all three pathogens (B. cinerea, S. minor, and S. sclerotiorum) was inhibited by 100%. QD RED (M1) and QD RED (M2) light suppressed mycelial growth of S. minor and B. cinerea by 100% at 30 cm and 15 cm height from the light source. For S. sclerotiorum, QD RED (M1) and QD RED (M2) showed 75.2% and 100% inhibition, respectively. Further experiment was conducted to know the suppression effect of lights after inoculating the fungal pathogens on lettuce crop. According to the results, QD RED (M2) suppressed the S. sclerotiorum by 59.9%. In addition, Blue (450 nm), QD RED (M1), and QD RED (M2) light reduce the infestation by 59.9%. In case of B. cinerea, disease reduction was found 84% by BLUE (450 nm) light. Results suggest that the growth inhibition of mycelium increases by Quantum dot LED light.

• International Journal of Advanced Culture Technology
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• v.7 no.4
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• pp.274-282
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• 2019

This paper discusses the main requirements in today's full-color holograms illumination and evaluates the last generation of LEDs, the actual best light source to render properly the colors of the holograms and in particular those recorded with red 660 nm, green 532 nm and blue 440 nm lasers. This paper presents also the first prototype of lamp designed especially for this kind of holograms.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.4
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• pp.14-17
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• 2006

A thin GaN semiconducting film that grows on sapphires due to metalorganic chemical vapor deposition was machined for nanophotonic applications. The thin film had multilayered superlattice structures, including nanoscaled InGaN layers. Eight alternating InGaN/GaN multilayers provided a blue light emission source. Nanoscaled holes, 150 nm in diameter, were patterned on polymethylmethacrylate (PMMA) film using an electron beam lithography system. The PMMA film blocked the etching species. Air holes, 75 nm in diameter, which acted as blue light diffraction sources, were etched on the top GaN layer by an inductively coupled plasma etcher. Hexagonal lattice photonic crystals were fabricated with 230-, 460-, 690-, and 920-nm pitches. The 450-nm wavelength blue light provided the nanodiffraction destructive and constructive interferences phenomena, which were dependent on the pitch of the holes.

• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.1-5
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• 2006

The GaN thin film on the 8 periods InGaN/GaN multi-quantum well structure was grown on the sapphire substrate using metal-organic chemical vapor deposition. The nano-scaled triangular-lattice holes with the diameter of 150 nm were patterned on a polymethylmethacrylate blocking film using an electron beam nano-lithography system. The thin slab and two-dimensional photonic crystals with the thickness of 28 nm were fabricated on the GaN layer for the blue light diffraction sources. The photonic crystal with the lattice parameter of 460 nm enhances spectral intensity of photoluminescence indicating that the photonic crystals provides the source of nano-diffraction for the blue light of the 450-nm wavelength.

• Korean Journal of Medicinal Crop Science
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• v.25 no.1
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• pp.37-44
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• 2017

Background: The light emitting plasma (LEP) has recently attracted attention as a novel artificial light source for plant growth and functional component enhancement. We investigated the effects of LEP on whitening and antioxidant activities of the plant parts of perilla. Methods and Results: Previously germianted seeds of perilla were cultivated under different light conditions (fluoresce lamp, LED red, blue, white, green, and LEP) in a culture room for 2 months. Parts of perilla were harvested and extracted in 70% EtOH. The extracts were used to detect total phenolic contents, total flavonoid contents, 2,2-diphenyl-1-picrylhydrazyl (DPPH), 2,2'-azino-bis-3-ethylbenzothiazoline-6-sulfonic acid (ABTS), reducing power and tyrosinase inhibition activity as indicators of biological activity. Biological activity was highest in seedlings grown under LEP. The total phenolic content was highest in the stems and the total flavonoid content was highest in the roots of perilla exposed to LEP. The DPPH and ABTS radical activity in all the parts of perilla exposed to LEP were higher by approximately three-fold compared to that in the control (fluoresce lamp). The reducing power values of perilla significantly increased after treatment with LEP. In addition, all the extract of perilla plants exposed to LEP promoted the tyrosinase inhibitory activity. These results suggest that LEP can be an important artificial light source for enhancement of biological activity. Conclusions: LEP could promote whitening and antioxidant activity of perilla.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.208-208
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• 2010

Zinc oxide (ZnO) is a functional material with interesting optical and electrical properties, a wide band gap (more than 3.3 eV), a high transmittance in the visible light region, piezoelectric properties, and a high n-type conductivity. This material has been investigated for use in many applications, such as transparent electrodes, blue light-emitting diodes, and ultra-violet detector. ZnO films grown under low oxygen pressure by thin film deposition methods show low resistivity and large free electron concentration. Therefore, reducing the background carrier concentration in ZnO films is one of the major challenges ahead of realizing high-performance ZnO-based optoelectronic devices. In this study, we deposited ZnO thin films on sapphire substrates by pulsed laser deposition (PLD) with employing an oxygen plasma source to decrease the background free-electron concentration and enhance the crystalline quality. Then, the substrate temperature was varied between 200 'C to 900 'C The vacuum chamber was initially evacuated to a pressure of $10^{-6}$ Torr, and then a pure $O_2$ gas was introduced into the chamber and the pressure during deposition was maintained at $10^{-2}$ Torr. Crystallinity and orientation of ZnO films were investigated by X-ray diffraction (XRD). The film surface was analyzed with atomic force microscope (AFM). And electrical properties were measured at room temperature by Hall measurement.