• Textile Coloration and Finishing
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• v.19 no.4
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• pp.38-46
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• 2007

Surface properties of the plasma treated fabric were changed while maintaining its bulk properties. Surface of plasma treated fabric take charge of enhanced adhesion by surface etching, surface activity. The water repellency coating Poly(Ethylene Terephthalate) fabric was treated with atmospheric pressure plasma using various parameters such as Argon gas, treatment time, processing power. Morphological changes by atmospheric pressure plasma treatment were observed using field emmission scanning electron microscopy(FE-SEM) and the zeta-potential measurement, contact angle measurement equipment. At the atmospheric pressure plasma treatment time of 150 sec, the power of 800W, the best wettability and peel strength were obtained. And we confirmed the possibility of industrial application by using atmospheric plasma system.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.287-287
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• 2008

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.10a
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• pp.76-76
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• 2006

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.176-176
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• 2009

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.04a
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• pp.139-140
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• 2007

본 연구에서는 ion bombardment에 의한 폴리머 기판의 손상을 줄이기 위해 FTS (Facing Target Sputtering) 장치를 이용하여 투명 전극용 ITO 박막을 합성하였다. 산소와 헬륨의 혼합비율을 변수로 하여 박막을 합성한 결과, 투명전극에 적합한 낮은 비저항과 80% 이상의 투과도를 갖는 박막을 합성할 수 있었다.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.9-13
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• 2003

Plasma polymerized organic thin films were deposited on Si(100), glass and metal substrates at $25∼100 ^{\circ}C$ using thiophene and toluene precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 30∼100 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency ($P_{k}$), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest $P_{k}$ value of plasma polymerized toluene film (85.27% at 70 W) was higher than that of the plasma polymerized thiophene film (65.17% at 100 W), indicating inhibition of oxygen reduction. The densely packed and tightly interconnected toluene film could act as an efficient barrier layer to the diffusion of molecular oxygen. The result of contact angle measurement showed that the plasma polymerized toluene films have more hydrophobic surface than those of the plasma polymerized thiophene films.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.16-19
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• 2018

The development speed of semiconductor and display device manufacturing technology is growing faster than the development speed of process equipment. So, there is a growing need for process diagnostic technology that can measure process conditions in real time and directly. In this study, a plasma diagnosis was carried out using impedance variation due to the plasma discharge. Variation of the measurement impedance appears as a voltage change at the reference impedance, and the plasma density is calculated using this. The above experiment was conducted by integrating the plasma diagnosis system and the linear atmospheric pressure DBD plasma source. It was confirmed that plasma density varies depending on various parameters (gas flow rate, $Ar/O_2$ mixture ratio, Input power).

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2009.10a
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• pp.358-361
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• 2009

The increasing interest in the surface modification technology by the plasma transferred arc overlaying process in the material processing is placing stringent demands on the manufacturing techniques and performance requirements, and the manufacture employs the high quality and efficiency plasma transferred arc overlaying technology. This paper covers recent technical trends of plasma transferred arc overlaying technology including the COMPENDEX DB analysis.

• Nuclear Engineering and Technology
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• v.52 no.11
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• pp.2535-2542
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• 2020

To understand the fundamental parameters of Alvand tokamak, A Rogowski coil with an active integrator was designed and constructed. Considering the characteristics of the Alvand tokamak, the structural and electrical parameters affecting the sensor function, were designed. Calibration was performed directly in the presence of plasma. The sensor has a high resistance against interference of external magnetic fields. Plasma current was measured in various experiments. Based on the plasma current profile and loop voltage signal, the time evolution of plasma discharge was investigated and plasma behavior was analyzed. Alvand tokamak discharge was divided into several regions that represents different physical phenomena in the plasma. During the plasma discharge time, plasma had significant changes and its characteristic was not uniform. To understand the plasma behavior in each of the phases, the Rogowski sensor should have sufficient time resolution. The Rogowski sensor with a frequency up to 15 kHz was appropriate for this purpose.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)