• Journal of Welding and Joining
• /
• 제30권4호
• /
• pp.24-30
• /
• 2012

Laser welding by fiber laser accompanied by a lot of spatter and humping bead. This is because the deep and narrow keyhole usually form due to high beam quality. So the weld bead is formed defects, because the plasma jet with a high vapor pressure make the molten pool on keyhole wall scattered. For such a reason, unstable behavior of keyhole is difficult to monitor laser welding by using the laser induced plasma. Mostly, fiber laser welding of thick plates most be influenced by this effect. Therefore, fiber laser welding has been difficult to apply the sole. Thus, laser welding monitoring based on plasma measurements have much difficulty in measurements and analysis of signal. In this study, influence of the plasma emission signal according to welding speed and laser power in fiber laser welding analysed by using RMS and FFT analysis. We can verify that RMS value of the plasma emission signal changes with welding parameters in fiber laser welding, and aspect ratio greater than 1, the peak of FFT frequency had been moved in accordance with welding parameter.

• 한국가시화정보학회지
• /
• 제19권3호
• /
• pp.123-129
• /
• 2021

Many plants and animals in nature have superhydrophobic surfaces. This superhydrophobic surface has various properties such as self-cleaning, moisture collection, and anti-icing. In this study, the superhydrophobic properties of PTFE surface were treated by plasma etching. There were four important factors that changed the surface properties. Micro-sized protrusions were formed by plasma etching. The most influential parameter was RF Power. The contact angle of the pristine PTFE surface was about 113.8°. The maximum contact angle of the surface after plasma treatment with optimized parameters was about 168.1°. In this case, the sliding angle was quite small about 1°. These properties made it possible to remove droplets easily from the surface. To verify the self-cleaning effect of the surface, graphite was used to contaminate the surface and remove it with water droplets. Graphite particles were easily removed from the optimized surface compared to the pristine surface. As a result, a surface having water repellency and self-cleaning effects could be produced with optimized plasma etching parameters.

• 한국재료학회지
• /
• 제22권4호
• /
• pp.211-214
• /
• 2012

Optimal conditions for HA plasma spray-coating on Ti6Al4V alloy were investigated in order to obtain enhanced bone-bonding ability with Ti6Al4V alloy. The properties of plasma spray coated film were analyzed by SEM, XRD, surface roughness measurement, and adhesion strength test because the film's transformed phase and crystallinity were known to be influential to bone-bonding ability withTi6Al4V alloy. The films were formed by a plasma spray coating technique with various combinations of plasma power, spray distance, and auxiliary He gas pressure. The film properties were analyzed in order to determine the optimal spray coating parameters with which we will able to achieve enhanced bone-bonding ability with Ti6Al4V alloy. The most influential coating parameter was found to be the plasma spray distance to the specimen from the spray gun nozzle. Additionally, it was observed that a relatively higher film crystallinity can be obtained with lower auxiliary gas pressure. Moderate adhesion strength can be achievable at minimal plasma power. That is, adhesion strength is minimally dependent on the plasma power. The combination of shorter spray distance, lower auxiliary gas pressure, and moderate spray power can be recommended as the optimal spray conditions. In this study, optimal plasma spray coated films were formed with spray distance of 70 mm, plasma current of 800 A, and auxiliary gas pressure of 60 psi.

• 신재생에너지
• /
• 제9권2호
• /
• pp.23-29
• /
• 2013

Furnace and laser is currently the most important doping process. However furnace is typically difficult appling for selective emitters. Laser requires an expensive equipment and induces a structural damage due to high temperature using laser. This study has developed a new atmospheric pressure plasma source and research atmospheric pressure plasma doping. Atmospheric pressure plasma source injected Ar gas is applied a low frequency (a few 10 kHz) and discharged the plasma. We used P type silicon wafers of solar cell. We set the doping parameter that plasma treatment time was 6s and 30s, and the current of making the plasma is 70 mA and 120 mA. As result of experiment, prolonged plasma process time and highly plasma current occur deeper doping depth and improve sheet resistance. We investigated doping profile of phosphorus paste by SIMS (Secondary Ion Mass Spectroscopy) and obtained the sheet resistance using generally formula. Additionally, grasped the wafer surface image with SEM (Scanning Electron Microscopy) to investigate surface damage of doped wafer. Therefore we confirm the possibility making the selective emitter of solar cell applied atmospheric pressure plasma doping with phosphorus paste.

• 폴리머
• /
• 제30권5호
• /
• pp.391-396
• /
• 2006

플라스마 표면처리는 접착력, 친수성, 소수성 등과 같은 고분자의 표면 특성을 개질시키기 위하여 사용되고 있다. 플라스마를 이용하여 표면을 처리하게 되면 고분자의 전체적인 물성은 유지한 채 표면의 특성만을 변화시키는 장점을 가지고 있다. 본 연구에서는 다양한 가스를 사용한 플라스마를 이용하여 상업용 Polyarlide66 (PA66) /polyphenylene(PPE) 고분자의 표면의 접착력 향상을 위해 표면 유기물 제거와 친수성으로 개질을 시도하였다. 플라스마 처리 공정 변수인 공정 파워, 처리 시간, 가스 종 들을 변화시키면서 표면을 개질하였으며 PASS/ PPE 고분자의 친수성 개질을 확인하기 위하여 접촉각 및 표면 자유에너지 변화를 측정하였다. 또한 유기물 제거를 FTIR 분석을 통하여 확인하였다. 플라스마를 이용한 표면처리 결과, 공정 파워 100 W, 처리 시간 2분, 아르곤/산소 공정가스에서 가장 낮은 접촉각(73도에서 14도)과 가장 높은 표면 자유에너지 ($44.20 mJ/m^2$에서 $50.03 mJ/m^2$)를 나타내었다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.241.1-241.1
• /
• 2014

The large-area high-power radio-frequency (RF) driven ion sources based on the negative hydrogen (deuterium) ion beam extraction are the major components of neutral beam injection (NBI) systems in future large-scale fusion devices such as an ITER and DEMO. Positive hydrogen (deuterium) RF ion sources were the major components of the second NBI system on ASDEX-U tokamak. A test large-area high-power RF ion source (LAHP-RaFIS) has been developed for steady-state operation at the Korea Atomic Energy Research Institute (KAERI) to extract the positive ions, which can be used for the NBI heating and current drive systems in the present fusion devices, and to extract the negative ions for negative ion-based plasma heating and for future fusion devices such as a Fusion Neutron Source and Korea-DEMO. The test RF ion source consists of a driver region, including a helical antenna and a discharge chamber, and an expansion region. RF power can be transferred at up to 10 kW with a fixed frequency of 2 MHz through an optimized RF matching system. An actively water-cooled Faraday shield is located inside the driver region of the ion source for the stable and steady-state operations of RF discharge. The characteristics and uniformities of the plasma parameter in the RF ion source were measured at the lowest area of the expansion bucket using two RF-compensated electrostatic probes along the direction of the short- and long-dimensions of the expansion region. The plasma parameters in the expansion region were characterized by the variation of loaded RF power (voltage) and filling gas pressure.

• Journal of Astronomy and Space Sciences
• /
• 제30권2호
• /
• pp.95-100
• /
• 2013

In this paper we examine a total of 16 dipolarization events that were observed by THEMIS spacecraft in space close to geosynchronous orbit, r < ${\sim}7\;R_E$. For the identified events, we examine the characteristics of the plasma flows and associated bubbles as defined based on $pV^{5/3}$, where p is the plasma pressure and V the volume of unit magnetic flux. First, we find that the flow speed in the near-geosynchronous region is very low, mostly within a few tens of km/s, except for a very few events for which the flow can rise up to ~200 km/s but only very near the dipolarization onset time. Second, the bubble parameter, $pV^{5/3}$, decreases by a much smaller factor after the dipolarization onset than for the events in the farther out tail region. We suggest that the magnetic dipolarization in the near-geosynchronous region generates or is associated with only very weak plasma bubbles. Such bubbles in the near-geosynchronous region would penetrate earthward only by a small distance before they stop at an equilibrium position or drift around the Earth.

• 한국수산과학회지
• /
• 제47권6호
• /
• pp.860-868
• /
• 2014

The study was performed to investigate changes in hematological responses and antioxidative enzyme activities (superoxide dismutase, SOD; catalase, CAT) of Japanese eel Anguilla japonica following exposure to 0 (control), 2.33, 4.60, 6,64 and 8.78 mM nitrite-N in fresh water for 48 h. Hematological parameters such as plasma nitrite, electrolytes, cortisol, glucose, glutamate oxaloacetate transaminase (GOT), glutamate pyruvate transaminase (GPT), hemoglobin (Hb), methemoglobin (metHb) and NADH-methemoglobin reductase (NMR) were measured. Plasma nitrite, cortisol, metHb and NMR increased directly with increasing ambient nitrite concentration, while Hb content showed a progressive decline. Levels of plasma potassium, GOT and GPT of the eel exposed to 6.64 mM ambient nitrite were significantly higher than the control fish. The activity of SOD and CAT in plasma, gill and liver of the eel following exposure to nitrite were augmented by increasing ambient nitrite. Levels of plasma nitrite, metHb, NMR, cortisol, glucose and antioxidative enzyme activities of the eel exposed to 2.33 mM ambient nitrite were significantly higher than the control fish. This study suggested that the eel acutely exposed to elevated ambient nitrite causes nitrite-induced stress responses, changes in antioxidative enzyme activities and hematological parameters.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
• /
• pp.210-210
• /
• 2000

Vertically well aligned multi-wall carbon nanotubes (CNT) were grown on nickel coated glass substrates by plasma enhanced hot filament chemical vapor deposition at low temperatures below 600$^{\circ}C$. Acetylene and ammonia gas were used as the carbon source and a catalyst. Effects of growth parameters such as pre-treatment of substrate, plasma intensity, filament current, imput gas flow rate, gas composition, substrate temperature and different substrates on the growth characteristics of CNT were systematically investigated. Figure 1 shows SEM image of CNT grown on Ni coated glass substrate. Diameter of nanotube was 30 to 100nm depending on the growth condition. The diameter of CNT decreased and density of CNT increased as NH3 etching time etching time increased. Plasma intensity was found to be the most critical parameter to determine the growth of CNT. CNT was not grown at the plasma intensity lower than 500V. Growth of CNT without filament current was observed. Raman spectroscopy showed the C-C tangential stretching mode at 1592 cm1 as well as D line at 1366 cm-1. From the microanalysis using HRTEM, nickel cap was observed on the top of the grown CNT and very thin carbon amorphous layer of 5nm was found on the nickel cap. Current-voltage characteristics using STM showed about 34nA of current at the applied voltage of 1 volt. Electron emission from the vertically well aligned CNT was obtained using phosphor anode with onset electric field of 1.5C/um.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.287-287
• /
• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.