• 한국전기전자재료학회논문지
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• 제22권12호
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• pp.1005-1008
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• 2009

In this study, adaptively coupled plasma (ACP) source was used for dry etching of $Al_2O_3$ thin film. During the etching process, the wafer surface temperature is an important parameter to influent the etching characteristics. Therefore, the experiments were carried out in ACP to measuring the etch rate, the selectivities of $Al_2O_3$ thin film to mask materials and the etch profile as functions of $Cl_2$/Ar gas ratio and substrate temperature. The highest etch rate of $Al_2O_3$ was 65.4 nm/min at 75% of $Cl_2/(Cl_2+Ar)$ gas mixing ratio. The etched profile was characterized using field effect scanning electron microscopy (FE-SEM). The chemical states of $Al_2O_3$ thin film surfaces were investigated with x-ray photoelectron spectroscopy (XPS).

• Transactions on Electrical and Electronic Materials
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• 제14권1호
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• pp.12-15
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• 2013

In this study, we carried out an investigation of the etching characteristics (etch rate, and selectivity to $SiO_2$) of $ZrO_2$ thin films in a $CF_4$/Ar inductively coupled plasma (ICP) system. The maximum etch rate of 60.8 nm/min for $ZrO_2$ thin films was obtained at a 20 % $CF_4/(CF_4+Ar)$ gas mixing ratio. At the same time, the etch rate was measured as a function of the etching parameter, namely ICP chamber pressure. X-ray photoelectron spectroscopy (XPS) analysis showed efficient destruction of the oxide bonds by the ion bombardment, as well as an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch characteristics for the $CF_4$-containing plasmas.

• 한국분말재료학회지
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• 제19권5호
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• pp.379-384
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• 2012

This paper reports the microstructures and thermal conductivities of $ZrB_2$-SiC composite ceramics with size and amount of SiC. We fabricated sintered bodies of $ZrB_2$-x vol.% SiC (x=10, 20, 30) with submicron and nanosized SiC densified by spark plasma sintering. Microstructure retained the initial powder size of especially SiC, except the agglomeration of nanosized SiC. For sintered bodies, thermal conductivities were examined. The observed thermal conductivity values are 40~60 W/mK, which is slightly lower than the reported values. The relation between microstructural parameter and thermal conductivity was also discussed.

• 한국진공학회지
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• 제8권4B호
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• pp.541-547
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• 1999

Reactive ion etching process for InP using BCl3/O2/Ar high density inductively coupled plasma was investigated. The experimental design method proposed by the Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power and the chamber pressure were the two dominant parameters affectsing etch results. It was also observed that the etch rate decreased and the surface roughness improved as the ICP power and the bias voltage increased and as the chamber pressure decreased. The Addition of oxygen to the gas mixture drastically improved surface roughness by suppressing the formation of the surface reaction product. The optimum condition was ICP power 600W, bias voltage -100V, 10% $O_2$, 6mTorr, and $180^{\circ}C$, resulting in about 0.15$\mu\textrm{m}$ etch rate with smooth surfaces and vertical mesa sidewalls Also, the maximum etch rate of abut 4.5 $\mu\textrm{m}$/min was obtained at the condition of ICP power 800W, bias voltage -150V, 15% $O_2$, 8mTorr and $160^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1123-1126
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• 2003

In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56MHz was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar- I line, luminance were investigated. At this time the input parameter for ICP RF plama, Ar gas pressure and RF power were applied in the range of $10{\sim}60m$ Torr, $10{\sim}300W$ respectively.

• Journal of Photoscience
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• 제8권3_4호
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• pp.87-92
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• 2001

Intramolecular excimer formation of 1,3-di(1-pyrenyl)propane (Py-3-Py) and fluorescence polarization of 1,6-diphenyl-1,3,5-hexatriene (DPH) were used to investigate the effects of parathyroid hormone (PTH) on the bulk bilayer fluidity of the plasma membrane vesicles isolated from cultured osteoblasts (OB-PMV). In a dose-dependent manner, rat PTH-(1-34) [rPTH-(1-34)] increased the excimer to monomer fluorescence intensity ratio (I'/I) of Py-3-Py and decreased the anisotropy (r) of DPH in OB-PMV. This indicates that PTH increased both the lateral and rotational diffusion of the probes in OB-PMY. Selective quenching of DPH fluorescence by trinitrophenyl groups was utilized to examine the transbilayer fluidity asymmetry of OB-PMV. The anisotropy, limiting anisotropy, and order parameter of DPH in the inner monolayer were 0.024, 0.032, and 0.062 greater than calculated for the outer monolayer of OB-PMY. Selective quenching of DPH fluorescence by trinitrophenyl groups was also utilized to examine the transbilayer effects of PTH on the fluidity of OB-PMV. rPTH-(1-34) had a greater fluidizing effect on the outer monolayer as compared to the inner monolayer of OB-PMV. Thus, it has been proven that PTH exhibits a selective rather than nonselective fluidizing effect within transbilayer domains of OB-PMV.

• 한국레이저가공학회지
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• 제2권3호
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• pp.11-18
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• 1999

This paper describes the weldability of carbon steel and stainless steel using 5㎾ $CO_2$ laser system with nearly multi-mode beam and a parabolic focusing mirror. In the laser welding of steels, major welding parameters are focal point, travel speed, beam power, shield gas and gap tolerance, etc.. Two kinds of gases(Ar, He) were used as a assist gas and supplied through the external nozzle. It is very important for optimum condition to remove plasma plume which absorbs laser beam and to obtain deep penetration and sound weld bead. Bead-on-plate welding tests were carried out for the experiments. Penetration data were obtained with various welding parameters and the effects of welding parameters were discussed. Butt welding tests were performed with various conditions. Only the optimum laser parameters assured good weld quality As a result of this study, We achieve the fundamental weldabilities using a high power $CO_2$ laser for carbon steel and stainless steel.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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• pp.109-109
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• 2000

Recently, carbon nanotube has been investigating for field emission display ( (FED) applications due to its high electron emission at relatively low electric field. However, the growing of carbon nanotube generally requires relatively high temperature processing such as arc-discharge (5,000 ~ $20,000^{\circ}C$) and laser evaporation (4,000 ~ $5,000^{\circ}C$) methods. In this presentation, low temperature growing of carbon nanotube by plasma enhanced chemical vapor deposition (PECVD) using nickel catalyst which is compatible to conventional FED processing temperature will be described. Carbon n notubes with average length of 100 run and diameter of 2 ~ $3\mu$ill were successfully grown on silicon substrate with native oxide layer at $550^{\circ}C$using nickel catalyst. The morphology and microstructure of carbon nanotube was highly depended on the processing temperature and nickel layer thickness. No significant carbon nanotube growing was observed with samples deposited on silicon substrates without native oxide layer. This is believed due to the formation of nickel-silicide and this deteriorated the catalytic role of nickel. The formation of nickel-silicide was confirmed by x-ray analysis. The role of native oxide layer and processing parameter dependence on microstructure of low temperature grown carbon nanotube, characterized by SEM, TEM XRD and R없nan spectroscopy, will be presented.

• 한국초전도ㆍ저온공학회논문지
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• 제4권1호
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• pp.78-83
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• 2002

Since the KSTAR superconducting magnet structure should be maintained at a cryogenic temperature of about 4 K, even a small amount of heat might be a major cause of the temperature rise of the structure. The Joule heating by eddy currents induced in the magnet structure during the KSTAR operation was found to be a critical parameter for designing the cooling scheme of the magnet structure as well as defining the requirements of the refrigerator for the cryogenic system. Based on the Joule heating calculation, it was revealed that the bulk temperature rise of the magnet coil structure was less than 1 K. The local maximum temperature especially at the inboard leg of the TF coil structure increased as high as about 21 K for the plasma vertical disruption scenario. For the CS coil structure, the maximum temperature was obtained from the PF fast discharging scenario. This means that the vertical disruption and PF fast discharging scenarios are the major scenarios for the design of TF and CS coil structures, respectively. For the reference scenario, the location of maximum temperature spot changes according to the transient current variation of each PF coil.

• Transactions on Electrical and Electronic Materials
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• 제15권3호
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• pp.164-169
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• 2014

We investigated the etching characteristics of $HfAlO_3$ thin films in $O_2/Cl_2/Ar$ and $O_2/BCl_3/Ar$ gas, using a high-density plasma (HDP) system. The etch rates of the $HfAlO_3$ thin film obtained were 30.1 nm/min and 36 nm/min in the $O_2/Cl_2/Ar$ (3:4:16 sccm) and $O_2/BCl_3/Ar$ (3:4:16 sccm) gas mixtures, respectively. At the same time, the etch rate was measured as a function of the etching parameter, namely as the process pressure. The chemical states on the surface of the etched $HfAlO_3$ thin films were investigated by X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched $HfAlO_3$ thin films. These surface analyses confirm that the surface of the etched $HfAlO_3$ thin film is formed with nonvolatile by-product. Also, Cl-O can protect the sidewall due to additional $O_2$.