• Proceedings of the KSME Conference
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• 2008.11b
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• pp.2892-2897
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• 2008

Plasma techniques have been proposed to generate a hydrogen enrich gas to investigate a feasibility of plasma techniques on a fuel reforming, we considered a dry reforming and a partial oxidation with methane in the atmospheric pressure. For these experiments, we employed an arc jet plasma reactor. The effects of input power and oxidizer in each process were investigated by product analysis, including carbon monoxide, hydrogen, ethylene, propane, and acetylene as well as methane and carbon dioxide. In both processes, input electrical power activated the reactions significantly. The increased ratio of the carbon dioxide to methane in the dry reforming doesn't affect to a methane conversion, whereas increased ratio of oxidizer to methane in the partial oxidation was very effective for the reaction. Moreover, for a simultaneous treatment of methane and carbon dioxide, a feasibility of a dry reforming combined with partial oxidation also has been investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.690-693
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• 2003

An Si substrate (100) was oxidized at $400^{\circ}C$ in inductively coupled oxygen plasma. Interstitial oxygen was found in the Si substrate at the initial stage of oxidation by IR measurements. An x-ray rocking curve of Si substrates showed a lower peak intensity due to lattice distortion by the interstitial oxygen. The refractive index of thin oxides, below which interstitial oxygen existed in the Si substrate, was smaller than the refractive index of thick oxides, below which no interstitial oxygen existed. The interstitial oxygen was found by plasma oxidation using $O_{2}$ gas and $N_{2}O$ gas. The inductively coupled plasma oxidation using $N_{2}O$ gas was performed by atomic oxygen, not by molecular oxygen, indicating that atomic oxygen in plasma is responsible for the incorporation of interstitial oxygen.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.288-288
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• 2012

The oxidation characteristics of tungsten line pattern during the carbon-based mask layer removal process using oxygen plasmas and the reduction characteristics of the WOx layer formed on the tungsten line surface using hydrogen plasmas have been investigated for sub-50 nm patterning processes. The surface oxidation of tungsten line during the mask layer removal process could be minimized by using a low temperature ($300^{\circ}K$) plasma processing instead of a high temperature plasma processing for the removal of the carbon-based material. Using this technique, the thickness of WOx on the tungsten line could be decreased to 25% of WOx formed by the high temperature processing. The WOx layer could be also completely removed at the low temperature of $300^{\circ}K$ using a hydrogen plasma by supplying bias power to the tungsten substrate to provide an activation energy for the reduction. When this oxidation and reduction technique was applied to actual 40 nm-CD device processing, the complete removal of WOx formed on the sidewall of tungsten line could be observed.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.634-639
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• 1996

In oder to improve the wear resistance as well as oxidation resistance at high temperature a AISI H13 steel was treated by a duplex process of calorizing followed by plasma nitriding. The surface properties of the duplex-treated AISI H13 steel was characterized and compared with those treated by single surface process of calorizing and plasma nitriding, in terms of microstruture, microhardness, wear resistance at $500^{\circ}C$, and the oxidation behaviours at $700^{\circ}C$, Duplex process on H13 steel had created duplex layer of approximately $190\mu\textrm{m}$ on the surface, and surface microhardness was measured to be above 1450Hv(0.1Kgf). There was considerable improvement of the high temperature wear resistance at $500^{\circ}C$ in the duplex-treated steel when both wear volume and weight change due to oxidation were considered. In addition the duplex-treated steel showed an improved high temperature oxidation resistance than the plasma nitrided steel at $700^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.68-77
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• 1995

Characteristics of electron cyclotron resonance (ECR) plasma thermal oxide grown at low-temperature have been investigated. The effects of several process parameters such as substrate temperature, microwave power, gas flow rate, and process pressure on the growth rate of the oxide have been also investigated. It was found that the plasma density, reactive ion species, is strongly related to the growth rate of ECR plasma oxied. It was also found that the plasma density increases with microwave power while it decreases with decreasing O2 flow rate. The oxidation time dependence of the oxide thichness showed parabolic characteristics. Considering ECR plasma thermal oxidation at low-temperature, the linear as well as parabolic rate constants calculated from fitting data by using the Deal-Grove model was very large in comparison with conventional thermal oxidation. The ECR plasma oxide grown on (100) crystalline-Si wafer exhibited good electrical characteristics which are comparable to those of thermal oxide: fixed oxide charge(N$_{ff}$)= 7${\times}10^{10}cm^{-2}$, interface state density(N$_{it}$)=4${\times}10^[10}cm^{-2}eV^{-1}$, and breakdown field > 8MV/cm.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.208.2-208.2
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• 2016

Many researchers have paid attention to the studies on the interaction between non-thermal plasma and aqueous solutions for biomedical applications. The gas composition in the plasma is very important. Oxygen and nitrogen are the main gases of interest in biological applications. Especially, we focus on the oxygen concentration. In this experiment, we studied the role of oxygen concentration in plasma induced chemical reactions in solution. At first, the amount of ions are measured according to changing the oxygen concentration. And we checked the relationship between these ions and pH value. Secondly, when the oxygen concentration is changed, it identified the type and amount of radical generated by the plasma. In order to confirm the effect of these chemical property change to biological material, hemoglobin and RBCs are chosen. RBCs are one of the common basic biological cells. Thirdly, when plasma treated according to oxygen concentration in nitrogen feeding gas, oxidation of hemoglobin and RBC is checked. Finally, membrane oxidation of RBC is measured to examine the relation between hemoglobin oxidation and membrane damage through relative hemolysis and Young's modulus. Our results suggest that reactive species generated by the plasma differsdepending on the oxygen concentration changes. The pH values are decreased when oxygen concentration increased. OH decrease and NO increase are also observed. These reactive species makes change of chemical properties of solution. We also able to confirm that the difference in these reactive species to affect the oxidation of the Hb and RBCs. The Hb and RBCs are more oxidized with the high oxygen concentration conditions. But membrane is damaged more by plasma treatment with only nitrogen gas. It is shown that red blood cells membrane damage and oxidation of hemoglobin are not directly related.

• Journal of the Korean Society for Heat Treatment
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• v.14 no.2
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• pp.103-109
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• 2001

Plasma nitrocarburising and post oxidation were performed on SM45C steel using a plasma nitriding unit. Nitrocarburising was carried out with various methane gas compositions with 4 torr gas pressure at $570^{\circ}C$ for 3 hours and post oxidation was carried out with 100% oxygen gas atmosphere with 4 torr at different temperatures for various times. It was found that the compound layer produced by plasma nitrocarburising consisted of predominantly ${\varepsilon}-Fe_{2-3}(N,C)$ and a small proportion of ${\gamma}-Fe_4(N,C)$. With increasing methane content in the gas mixture, ${\varepsilon}$ phase compound layer was favoured. In addition, when the methane content was further increased, cementite was observed in the compound layer. The very thin oxide layer on top of the compound layer was obtained by post oxidation. The formation of Oxide phase was initially started from the magnetite($Fe_3O_4$) and with increasing oxidation time, the oxide phase was increased. With increasing oxidation temperature, oxide phase was increased. However the oxide layer was split from the compound layer at high temperature. Corrosion resistance was slightly influenced by oxidation times and temperatures.

• Korean Chemical Engineering Research
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• v.46 no.2
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• pp.408-413
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• 2008

In this work, the use of LPRTO (low pressure rapid thermal oxidation) and remote plasma oxidation was evaluated for the preparation of ultra thin silicon oxide layer with less than 5 nm. The silicon oxide thickness grown by LPRTO was rapidly increased and saturated. The maximum thickness could be controlled at about 5 nm. As RF power and oxygen flow rate at a remote plasma oxidation increased, the behavior of oxide growth was almost the same as that of LPRTO. The oxide thickness of 4 nm was the maximum obtained by a remote plasma oxidation in this work. The quality of silicon oxide grown by LPRTO was comparable to the thermally grown conventional oxide.

• Journal of the Korean Applied Science and Technology
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• v.17 no.2
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• pp.89-93
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• 2000

The oxidation of methane was carried out in six different configurations of plasma reactors in order to study the radical reactions inside and outside of the plasma zone and to explore the method to control them. Various radicals and reactive molecules, such as CH, $CH_{2}$, $CH_{3}$, H, and O(from $O_{2}$) were generated in the plasma. A variety of products were produced through many competing reaction pathways. Among them. partial oxidation products were usually not favored, because the intermediates leading to the partial oxidation products could be oxidized further to carbon dioxides easily. It is important to control the free radical reactions in the plasma reactor by controlling the experimental conditions so that the reactions leading to the desired products are the major pathways.

• Preventive Nutrition and Food Science
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• v.18 no.3
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• pp.175-180
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• 2013

The purpose of this study was to determine the effects of a pre-exercise meal on the plasma human growth hormone (hGH) response and fat oxidation during walking. Subjects (n=8) were randomly provided with either 1 g/kg body weight of glucose in 200 mL water (CHO) or 200 mL water alone (CON) 30 min prior to exercise and subsequently walked on a treadmill at 50% of VO2max for 60 min. Plasma hGH concentrations were significantly higher in subjects who received CHO compared to those who received CON at 15 and 30 min. The fat oxidation rate in the CHO was significantly lower than the CON while walking for 5~15, 25~35 and 45~55 min. Plasma FFA levels were also significantly lower in the CHO compared to the CON at 30, 45 and 60 min. Plasma glucose levels in the CHO were significantly lower while plasma insulin levels were significantly higher than in the CON at 15 and 30 min. Therefore, the results of this study suggest that the elevation of plasma hGH levels due to the intake of a pre-exercise meal may not be strongly related to fat oxidation and plasma free fatty acid (FFA) levels during low-intensity exercise.