• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.543-546
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• 2005

We have investigated the alignment ability of multi-domains by using ion beam irradiation on diamond-like carbon (DLC) thin film layers. The DLC thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) system and the low energy ion beam is irradiated from Kaufman type ion gun. The direction of liquid crystal alignment is varied by the direction of Ar ion beam irradiation.

• Biomolecules & Therapeutics
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• v.10 no.4
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• pp.274-280
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• 2002

The fluoroquinolones have been reported to cause, although at low frequency, severe phototoxicity which is due to singlet oxygen produced by ultraviolet-A (UVA; 320-400 nm) exposure. The objective of this study was to evaluate the phototoxicity based on plasma and tissue concentrations of commonly prescribed fluoroquinolones; lomefloxacin (LFLX), enoxacin (ENX), ofloxacin (OFLX), and ciprofloxacin (CPFX). The phototoxic potentials were investigated by measuring increments in ear thickness, 24 hrs after these fluoroquinolones were orally administered to Balb/c mice, which they were exposed to UVA 17.5 J/$\textrm{cm}^2$ for 2 hrs following drug administration. The fifty percent ear thickness increment-inducing doses ($ETID_{50}$), determined by single ascending dosing of each fluoroquinolone to mice, were calculated to be 50(LMFX), 250(ENX), 770(OFLX), 1100(CPFX) mg/kg. Post the administration of ETID$_{50}$, drug concentrations in plasma and ear tissue were measured at specified times and phototoxicities were quantified. Both peak plasma ($\mu\textrm{g}$/ml) and ear tissue ($\mu\textrm{g}$/g) concentrations were summarized as follows; 7.3/1.4 for LMFX, 15.0/1.6 for ENX, 90.1/18.4 for OFLX and 87.2/3.7 for CPFX. The degree of photo toxicity was more relevant to plasma concentrations than tissue concentrations. In order to assess the effect of irradiation time after drug administration on phototoxicity, the 2 hr UVA irradiation was given at 0, 1, 2, 3, and 5 hr after administering $ETID_{50}$, respectively and photo toxicities were evaluated. The shorter inteval between dosing and UVA exposure was, the higher risk of phototoxicity was produced.d.

• Journal of Food Hygiene and Safety
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• v.32 no.1
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• pp.64-69
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• 2017

This study was conducted to investigate the effect of cold plasma combined with UV-C irradiation against Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes on lettuce. E. coli O157:H7, S. Typhimurium, and L. monocytogenes, corresponding to approximately 5.82, 5.09, 5.65 log CFU/g, were inoculated on lettuce, respectively. Then, the lettuce was treated with cold plasma, UV-C and combination (cold plasma + UV-C), respectively. The treated lettuce was stored for 9 days at $4^{\circ}C$ for microbiological analysis and sensory evaluation. Cold plasma reduced the populations of E. coli O157:H7, S. Typhimurium, and L. monocytogenes by 0.26, 0.65, and 0.93 log CFU/g, respectively. Each microorganism were reduced by 0.87, 0.88, and 1.14 log CFU/g after UV-C treatment. And, the combined treatment that was treated by cold plasma after UV-C treatment reduced the populations of inoculated microorganisms by 1.44, 2.70, 1.62 log CFU/g, respectively. The all treatment significantly (p < 0.05) reduced the populations of all inoculated bacteria compared to untreated lettuce. UV-C combined with cold plasma was the most effective for reducing the pathogenic bacteria on lettuce, by showing log-reductions of ${\geq}2.0\;log\;CFU/g$. All treatment was not significantly different until 6 day storage compared to control group in terms of appearance, texture and overall acceptability. Therefore, the combined treatment will be an effective intervention method to control the bacteria on lettuce.

• Korean Journal of Materials Research
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• v.15 no.1
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• pp.42-46
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• 2005

In microelectronics packaging, the reliability of the metal/polymer interfaces is an important issue because the adhesion strength between dissimilar materials is often inherently poor. The modification of polymer sufaces by ion beam irradiation and rf plasma are commonly used to enhance the adhesion strength of the interface. T-peel strengths were measured using a Cu/polyimide system under varying $Ar^+$ ion beam irradiation pretreatment conditions. The measured T-peel strength showed reversed camel back shape regarding the fixed metal-layer thickness, which was quite different from the results of the $90^{\circ}$ peel test. The elementary analysis suggests that the variation of the T-peel strength is a combined outcome of the plastic bending work of the metal and polymer strips. The results indicate that the peel strength increases with $Ar^+$ ion beam irradiation energy at the fixed metal-layer thickness.

• The Korean Journal of Nuclear Medicine
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• v.1 no.1
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• pp.1-19
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• 1967

The effects of X-ray irradiation and the thyroid gland on the erythropoietic system were studied in the white male rabbits. The total body irradiation was done in doses of 250 r and 500 r to each of 5 rabbits for 10days. The factors were 220KV, 10mA, FLI/4 Cu+1 mmAI(HVL:2.0 mm Cu) 50 cm F.S.D. The thyroid dysfunction was experimentally induced, by giving 2mg of thyroid tablets per kg body weight for 15 days in 5 rabbits for hyperthyroidism and by giving 1.5 mC of $^{131}I$ per kg body weight in another 5 rabbits for hypothyroidism. Fourteen healthy rabbits were used as control. The hematologic changes and ferrokinetic data obtained from $^{59}Fe$ and apparent half survival of the red blood cells obtained from $^{51}Cr$ were compared. Following were the results: A. X-ray irradiated group; 1. There were no significant changes in hematologic findings except for leucopenia. A slight decrease of red blood cells was observed in 500 r irradiated animals. 2. The decreases in the iron turnover rates of the plasma and red blood cells as well as in the red cell renewal rate were found in both groups. A :significant decrease of the red cell iron utilization rate was observed in the 500 r irradiated animals. 3. The apparent half survival times of the red blood cells were slightly, in the 250 r ($12.1{\pm}0.80$ days), and markedly shortened in the 500 r irradiated animals ($9.8{\pm}1.38$ days), the normal being $14.0{\pm}1.6$ days. 4. It appears, therefore, that the anemia caused by X-ray irradiation is due to the inhibition of hemopoietic function and the excess destruction of the red blood cells. B. Thyroid dysfunction group; 1. The slight increases of the red blood cell count and circulating blood volume with the normal serum iron level were observed in the hyperthyroid group, while the decreases of the red and white blood cell counts, hemoglobin and hematocrit values with a marked decrease of the serum iron level in the hypothyroid group. 2. A marked decrease of the plasma iron disappearance rate with increases of plasma iron turnover, red cell iron utilization and red cell iron turnover were observed in the hyperthyroid group, while the marked delay and decreases in the hypothyroid group. 3. The apparent half survival times of the red blood cells were almost the same with the control in the hyperthyroid group, ($14.0{\pm}1.58$ while a marked shortening in the hypothyroid group $10.6{\pm}0.30$. 4. It was reconfirmed that the thyroid hormones bear a close relationship with the erythropoietic system, namely, the latter is stimulated by the former. The lack of the thyroid hormones thus induces the bone marrow depression leading to anemia the major cause of which, therefore, is not hemolysis.

• The Korean Journal of Ceramics
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• v.4 no.1
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• pp.15-19
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• 1998

Defects formation of Chemical Vapor Deposition (CVD) diamond on $^4He^{2+}$ irradiation and after remote hydrogen plasma treatment(RHPT) were investigated by cathodoluminescence(CL). As calculated in the TRIM simulation, the light elements of $^4He^{2-}$ can be penetrated into the diamond bulk structure at 3~4 $\mu\textrm{m}$ depth. The effects of the implantation region were observed when 5 keV~20 keV electron energy (insight 0.3~4.0$\mu\textrm{m}$) of CL measurement was irradiated to diamond at temperature 80 K. After the RHPT, rehybridization of irradiation damaged diamond was studied. The intensity of 5RL center(intrinsic defect of C) was diminished. The 2.16 eV center (N-V center) occurring usually by annealing could not be seen after RHPT. The diamond was rehybridized by hydrogen radicals without etching and thermal degradation by the RHPT.

• Transactions on Electrical and Electronic Materials
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• v.12 no.3
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• pp.89-92
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• 2011

Hydrogenated amorphous carbon (a-C:H) films were deposited by plasma enhanced chemical vapor deposition on silicon substrates. a-C:H thin film was irradiated to a typical He-Cd laser to study its emitting properties. The photoluminescence (PL) intensity during the irradiation achieved a maximum value when 2,000 seconds elapsed. Fourier transform infrared measurement revealed a-C:H thin film suffered transformation from a polymer-like to graphite-like phase during laser irradiation. Thermal annealing was done at various temperatures, ranging from room temperature to $400^{\circ}C$ in the atmosphere, to investigate structural changes in a-C:H film by heat generation during the emission. PL intensity of a-C:H thin film increased 1.5 times without apparent structural change, as annealing temperature increased up to $200^{\circ}C$. However, a-C:H film above $200^{\circ}C$ exhibited significant decrease of PL accompanying dehydrogenation. This led to a red shift of the PL peak.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.99-102
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• 1999

A mixture which was made from organic gel, glass powder and ceramic powder was masklessly etched for fabrication of barrier rib of PDP(Plasma Display Panel) by focused Ar$^{+}$ laser( λ =514 nm) and Nd:YAG(λ =532, 266 nm) laser irradiation at the atmosphere. The depth of the etched grooves increases with increasing a laser fluence and decreasing a scan speed. Using second harmonic of Nd:YAG laser, the threshold laser fluence was 6.5 mJ/$\textrm{cm}^2$ for the sample of PDP barrier rib softened at 12$0^{\circ}C$. The thickness of 130 ${\mu}{\textrm}{m}$ of the sample on the glass was clearly removed without any damage on the glass substrate by fluence of 19.5 J/$\textrm{cm}^2$....

• Journal of the Korean Society for Precision Engineering
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• v.30 no.1
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• pp.67-76
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• 2013

We present an innovative real-time laser welding monitoring technique employing the correlation analysis of the plasma plume optical emission generated during the process. The plasma optical radiation emitted during Nd:YAG laser welding of S45C steel samples has detected with a Photodiode and analyzed under different process conditions. The discrete DC voltage difference, filter methods and wavelet transform has been used to decompose the optical signal into various discrete series of sequences over different frequency bands. Considering that wavelet analysis can decompose the optical signals, extract the characteristic information of the signals and define the defects location accurately, it can be used to implement process-control of laser welding.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.40-41
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• 1996

Nitridation technique has been receiving much attention for the formation of a thin nitrided buffer layer on which high quality nitride films can be formedl. Particularly, gallium nitride (GaN) has been considered as a promising material for blue-and ultraviolet-emitting devices. It can also be used for in situ formed and stable passivation layers for selective growth of $GaAs_2$. In this work, formation of a thin nitrided layer is investigated. Nitrogen electron cyclotron resonance(ECR)-plasma is employed for the formation of thin nitrided layer. The plasma source used in this work is a compact ECR plasma gun3 which is specifically designed to enhance control, and to provide in-situ monitoring of plasma parameters during plasma-assisted processing. Microwave power of 100-200 W was used to excite the plasma which was emitted from an orifice of 25 rnm in diameter. The substrate were positioned 15 em away from the orifice of plasma source. Prior to nitridation is performed, the surface of n-type (001)GaAs was exposed to hydrogen plasma for 20 min at $300{\;}^{\circ}C$ in order to eliminate a native oxide formed on GaAs surface. Change from ring to streak in RHEED pattern can be obtained through the irradiation of hydrogen plasma, indicating a clean surface. Nitridation was carried out for 5-40 min at $RT-600{\;}^{\circ}C$ in a ECR plasma-assisted molecular beam epitaxy system. Typical chamber pressure was $7.5{\times}lO^{-4}$ Torr during the nitridations at $N_2$ flow rate of 10 seem.(omitted)mitted)