• Proceedings of the KSME Conference
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• 2004.04a
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• pp.956-960
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• 2004

Effects of ion implantation and deposition on the tribological properties of DLC film as a function of implanted energies and process times were investigated. TiC ions were implanted and deposited on the Si-wafer substrates followed by DLC coating using ion beam deposition method. In order to study tribological properties such as friction coefficient and behavior of DLC film on the modified surface as a function of implanted energies and process times, we used a ball-on-disc type apparatus in the atmospheric environment. From results of wear test, as the implanted energy was increased, the friction coefficient was more stable below 0.1.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.151-151
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• 2012

A new plasma process, i.e., the combination of PIII&D and HIPIMS, was developed to implant non-gaseous ions into materials surface. HIPIMS is a special mode of operation of pulsed-DC magnetron sputtering, in which high pulsed DC power exceeding ~1 kW/$cm^2$ of its peak power density is applied to the magnetron sputtering target while the average power density remains manageable to the cooling capacity of the equipment by using a very small duty ratio of operation. Due to the high peak power density applied to the sputtering target, a large fraction of sputtered atoms is ionized. If the negative high voltage pulse applied to the sample stage in PIII&D system is synchronized with the pulsed plasma of sputtered target material by HIPIMS operation, the implantation of non-gaseous ions can be successfully accomplished. The new process has great advantage that thin film deposition and non-gaseous ion implantation along with in-situ film modification can be achieved in a single plasma chamber. Even broader application areas of PIII&D technology are believed to be envisaged by this newly developed process. In one application of non-gaseous plasma immersion ion implantation, Ge ions were implanted into SiO2 thin film at 60 keV to form Ge quantum dots embedded in SiO2 dielectric material. The crystalline Ge quantum dots were shown to be 5~10 nm in size and well dispersed in SiO2 matrix. In another application, Ag ions were implanted into SS-304 substrate to endow the anti-microbial property of the surface. Yet another bio-application was Mg ion implantation into Ti to improve its osteointegration property for bone implants. Catalyst is another promising application field of nongaseous plasma immersion ion implantation because ion implantation results in atomically dispersed catalytic agents with high surface to volume ratio. Pt ions were implanted into the surface of Al2O3 catalytic supporter and its H2 generation property was measured for DME reforming catalyst. In this talk, a newly developed, non-gaseous plasma immersion ion implantation technique and its applications would be shown and discussed.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2004.11a
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• pp.301-305
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• 2004

Effects of ion implantation on the adhesion strength of DLC film as a function of ion doses and implanted energies were investigated. Ti ions were implanted on the Si-wafer substrates followed by DLC coating using ion beam deposition method. Adhesion strength of DLC films were determined by scratch adhesion tester. Morphologies and compositional variations at the different ion energies and doses were observer by Laser Microscope and Auger Electron Spectroscopy, respectively. From results of scratch test, the adhesion strength of films was improved as increasing ion implanted energy, however there was no significant evidence with ion dose.

• Journal of the Semiconductor & Display Technology
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• v.2 no.1
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• pp.1-5
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• 2003

Plasma generator based on non-self-sustained low-pressure arc discharge has been examined as a tool for deposition of highly-adhesive hydrogenated amorphous diamond-like carbon(DLC) films. Since the discharge is stable in wide range of gas pressures and currents, this plasma source makes possible to realize both plasma-immersion ion implantation(PIII) and plasma-immersion ion deposition(PIID) in a unified vacuum cycle. The plasma parameters were measured as functions of discharge current. Discharge and substrate bias voltage parameters have been determined for the PIII and PIID modes. For PIID it has been demonstrated that hard and well-adherent DLC coating are produced at 200-500 eV energies per deposited carbon atom. The growth rates of DLC films in this case are about 200-300 nm/h. It was also shown that short(∼60$\mu\textrm{s}$) high-voltage(> 1kV) substrate bias pulses are the most favorable for achieving high hardness and good adhesion of DLC, as well as for reducing of residual intrinsic stress are.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.137-137
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• 2012

인공관절은 노인성 질환이나 자가 면역질환, 신체적인 외상 등으로 인하여 발생하는 관절의 손상 부위를 대체하기 위하여 고안된 관절의 인공 대용물이다. 인공 관절 중 인공 고관절의 경우 라이너(Liner)와 헤드(Head) 부분이 직접적인 마모 운동을 수행하게 되므로, 이 부분의 소재 특성에 따라 인공관절의 수명이 결정 되게 된다. 현재 헤드 소재로서는 Co-Cr-Mo 합금이, 라이너 소재로서는 고분자 소재인 UHMWPE (Ultra High Molecular Weight Polyethylene)가 주로 사용되고 있다. 이러한 MOP (Metal-On-Polymer) 구조의 인공관절의 경우, 충격흡수의 장점이 있는 반면, 관절 운동시 발생하는 UHMWPE 의wear debris에 의해 골용해가 발생하게 되어 인공관절의 수명이 저하되는 문제점이 있으며, 금속 헤드의 마모로 인한 금속이온의 용출은 세포 독성의 문제를 야기하여 인공관절의 수명을 저하시키는 또 다른 원인이 되고 있다. 따라서 본 연구에서는 PIII&D (Plasma Immersion Ion Implantation & Deposition) 공정을 이용하여 금속 (Co-Cr-Mo 합금)소재 위에 세라믹 (niobium nitride) 박막을 증착하여 상대재인 UHMWPE의 마모를 줄이고자 하는 연구를 진행하였다. 금속 소재 위에 증착된 세라믹 박막은 상대재인 UHMWPE의 마모량을 줄여줄 뿐만 아니라 금속이온의 용출을 막아준다는 장점이 있으나, 장시간의 마모 운동에 의하여 발생하는 박막의 박리 현상은 인공관절의 수명을 급격히 저하시키는 또 다른 원인이 된다. 이러한 단점을 해결하기 위하여, 박막의 증착 초기에 이온주입과 증착을 동시에 수행하는 dynamic ion mixing공정을 수행하였다. Dynamic ion mixing 공정을 수행함에 따라 박막과 금속 사이의 접착력이 증가하게 되어, UHMWPE의 마모량이 2배 가까이 감소하는 것을 확인할 수 있었으며, 장시간의 마모시험에서도 우수한 결과를 얻을 수 있었다. 또한 UHMWPE의 마모량을 감소시키기 위하여 박막을 증착하기 전에 금속 소재에 질소 이온주입을 수행하는 pre-ion implantation 공정을 도입하였다. 질소 이온주입 결과 Co-Cr-Mo 합금 표면에 부분적으로 CrN, Cr2N의 세라믹 상이 형성 되는 것을 확인할 수 있었으며, 그에 따라 UHMWPE의 마모량이 2배 이상 감소 되는 것을 확인 할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.178-178
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• 2016

Every display is equipped with a cover glass to protect the underneath displaying devices from mechanical and environmental impact during its use. The strengthened glass such as Gorilla glass.$^{TM}$ has been exclusively adopted as a cover glass in many displays. Conventionally, the strengthened glass has been manufactured via ion-exchange process in wet salt bath at high temperature of around $500^{\circ}C$ for hours of treatment time. During ion-exchange process, Na ions with smaller diameter are substituted with larger-diameter K ions, resulting in high compressive stress in near-surface region and making the treated glass very resistant to scratch or impact during its use. In this study, PIIID (plasma immersion ion implantation and deposition) technique was used to implant metal ions into the glass surface for strengthening. In addition, due to the plasmonic effect of the implanted metal ions, the metal-ion implanted glass samples got colored. To implant metal ions, plasma immersion ion implantation technique combined with HiPIMS method was adopted. The HiPIMS pulse voltage of up to 1.4 kV was applied to the 3" magnetron sputtering targets (Cu, Ag, Au, Al). At the same time, the sample stage with glass samples was synchronously pulse-biased via -50 kV high voltage pulse modulator. The frequency and pulse width of 100 Hz and 15 usec, respectively, were used during metal ion implantation. In addition, nitrogen ions were implanted to study the strengthening effect of gas ion implantation. The mechanical and optical properties of implanted glass samples were investigated using micro-hardness tester and UV-Vis spectrometer. The implanted ion distribution and the chemical states along depth was studied with XPS (X-ray photo-electron spectroscopy). A cross-sectional TEM study was also conducted to investigate the nature of implanted metal ions. The ion-implanted glass samples showed increased hardness of ~1.5 times at short implantation times. However, with increasing the implantation time, the surface hardness was decreased due to the accumulation of implantation damage.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1643-1645
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• 2001

플라즈마 잠김 이온주입 장치를 개조하여 플라즈마 잠김 이온주입 및 증착 장치를 제작하였다. 박막을 증착하기 위하여 마그네트론 스퍼터를 장착하였다. Si 시료에 TiN막을 형성하기 위하여 $PI^3$

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.414-420
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• 2001

A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

• Korean Journal of Materials Research
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• v.22 no.2
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• pp.66-70
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• 2012

Ti-Ni alloys are widely used in numerous biomedical applications (e.g., orthodontics, cardiovascular science, orthopaedics) due to their distinctive thermomechanical and mechanical properties, such as the shape memory effect, superelasticity and low elastic modulus. In order to increase the biocompatibility of Ti-Ni alloys, many surface modification techniques, such as the sol-gel technique, plasma immersion ion implantation (PIII), laser surface melting, plasma spraying, and chemical vapor deposition, have been employed. In this study, a Ti-49.5Ni (at%) alloy was electrochemically etched in 1M $H_2SO_4$+ X (1.5, 2.0, 2.5) wt% HF electrolytes to modify the surface morphology. The morphology, element distribution, crystal structure, roughness and energy of the surface were investigated by scanning electron microscopy (SEM), energy-dispersive Xray spectrometry (EDS), X-ray diffractometry (XRD), atomic force microscopy (AFM) and contact angle analysis. Micro-sized pores were formed on the Ti-49.5Ni (at%) alloy surface by electrochemical etching with 1M $H_2SO_4$+ X (1.5, 2.0, 2.5) wt% HF. The volume fractions of the pores were increased by increasing the concentration of the HF electrolytes. Depending on the HF concentration, different pore sizes, heights, surface roughness levels, and surface energy levels were obtained. To investigate the osteoblast adhesion of the electrochemically etched Ti-49.5Ni (at%) alloy, a MTT test was performed. The degree of osteoblast adhesion was increased at a high concentration of HF-treated surface structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.313-313
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• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.