• Journal of Korean Society for Atmospheric Environment
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• v.9 no.E
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• pp.382-389
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• 1993

An evaluation of a plasma reactor was conducted to investigate its potential as a feasible and economical off-gas control technology for an air stripping tower (AST). The plasma reactor was powered by an alternating current with frequencies up to 1000Hz. The study showed that over 90% conversion of gas-phase trichloroethylene (TCE) can be achieved. An optimum frequency for the laternating current existed for maximum power input. The optimum frequency was dependent on the reactor geometry and the primary voltage applied. for a fixed geometry, a plasma reactor has a limited capacity for flow rate. Even though it is a feasible process to control off-gases, further investigations should be conducted to develop a more economic process.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.101-103
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• 2009

Minimizing the residual impurity level on the MgO layer is the key factor for reducing temporal dark image sticking on bright screen. In this paper, to reduce the residual impurity level on the MgO layer of 50-in. full-HD ac-PDP with He (35%) - Xe (11%) contents, RF-plasma treatments on the MgO layer are adopted under various gases for plasma treatment. As a result of monitoring the difference in the display luminance between the before and after 5-min. sustain discharge with a square-type image at peak luminance, the Ar and Ar>$O_2$ plasma treatments can reduce the temporal dark image sticking on the bright screen in an ac-PDP.

• Journal of Korean Society for Atmospheric Environment
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• v.29 no.1
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• pp.27-37
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• 2013

CFCs (Chlorofluorocarbons) and HCFCs (Hydrochlorofluorocarbons) that are chemically stable were proven to be a greenhouse gases that can destroy ozone layer. On the other hand, HFCs (Hydrofluorocarbons) was developed as an alternative refrigerant for them, but HFCs still have a relatively higher radiative forcing, resulting in a large Global Warming Potential (GWP) of 1,300. Current regulations prohibit production and use of these chemicals. In addition, obligatory removal of existing material is in progress. Methods for the decomposition of these material can be listed as thermal cracking, catalytic decomposition and plasma process. This study reports the development of low cost and high efficiency plasma scrubber. Stability of steam plasma generation and effect of plasma parameters such as frequency of power supply and reactor geometry have been investigated in the course of the development. Method for effective removal of by-product also has been investigated. In this study, elongated rotating arc was proven to be efficient in decomposition of HFCs above 99% and to be able to generate stable steam plasma with steam contents of about 20%.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.149-150
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• 1989

Diamond thin films were synthesised from the mixed gases of $CH_4$ and $H_2$ on silicon substrate by R.F plasma CVD and films deposited were investigated by SEM. XRD and Raman spectroscope. From these result, cubo-octahedral diamond particles were synthesised under the following condition: methane concentration. 1.0vol% ; pressure of reactor, 0.3torr ; R.F power, 500W ; reaction time, 20hr.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.395-402
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• 2001

An induction thermal plasma system have been newly designed for advanced operation with a pulse modulated mode to control the plasma power in time domain and to create non-equilibrium effects such as fast quenching of the plasma to produce new functional materials in high rate. The system consists of MOSFET power supply with a maximum power of 50 kW with a frequency of 460 kHz, an induction plasma torch with a 10-turns coil of 80 mm diameter and 150 mm length and a vacuum chamber. The pulse modulated plasma was successfully generated at a plasma power of 30 kW and a high pressure of 100 kPa, with taking the on and off time as 10 ms, respectively. Measurements were carried out on the time-dependent spectral lines emitted from Ar species. The dynamic behavior of plasma temperature in a pulse cycle was estimated by the Boltzmann plot and the excitation temperature of Ar atom was found to be changed periodically from around 0.5 to 1.7 eV during the cycle. Two application regions of the induction thermal plasma newly generated were introduced to material processing with high rate synthesis based on non equilibrium effects, and to the finding of new arc quenching gases coming necessary for power circuit breaker, which is friendly with earth circumstance alternative to SF6 gas.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.151-155
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• 2007

A compact discharge plasma system with a photocatalyst has been proposed and investigated experimentally for application to air conditioners. It was found that there was intense ultra violet radiation with high energy of 3.2 eV from the corona discharge due to the DC-biased pulse voltage applied on a wire. An electrophotochemical reaction took place apparently on the surfaces of the photocatalyst of $TiO_2$ irradiated ultra violet front the discharge plasma in the proposed plasma system. The proposed discharge plasma system with the photocatalyst of $TiO_2$ showed very high removal efficiency of VOCs by tile additional electrophotochemical reactions on the photocatalyst. The proposed discharge plasma system also showed very high removal efficiency of particles such as smokes, suspended bacteria, and pollen and mite allergens by the electrostatic precipitation part. This type of corona discharge plasma system with a photocatalyst can be used as an effective means of removing both indoor pollutant gases and particles including suspended allergens.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.895-897
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• 1998

The optical spectra of microwave plasma by four kinds of gases($N_2$, $N_2-CH_4$, $H_{2}-CH_{4}$ and Air-$CH_4$) have been measured for investigating 388.4[nm] peak which has the same intensity as $H_{\alpha}$(656.4[nm]) peak. A 388.4[nm] peak by $N_2$ plasma, $N_{2}-CH_{4}$ plasma and Air-$CH_4$ plasma may be CN peak because it is with 337.1, 357.8 and 316.0[nm] peaks by $N_2$. And a 388.4[nm] peak by $H_{2}-CH_{4}$ plasma without by $N_2$ 337.1, 357.8 and 316.0[nm] peaks may be CH peak. In the investigation results for optical spectra by $H_{2}-CH_{4}$ plasma and $H_{2}-CH_{4}-O_{2}$ plasma, the density of hydrogen atom was increased because oxygen decompose hydrogen molecules in $H_{2}-CH_{4}$ plasma with oxygen. These hydrogen atom decompose $CH_4$ and increase CH radical. And the crystalline of deposited diamond was good and the growth rate increased.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.563-566
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• 2002

We investigated to decrease the leakage current of SiNx film by employing $N_2$ plasma treatment. The insulator layers were prepared by two step process; the $N_2$ plasma treatment and then PECVD SiNx deposition with $SiH_4$, $N_2$ gases. To prove the influence of the $N_2$ plasma treatment, the Si substrate was exposed to the plasma, which was generated in Ne gas ambient. Without plasma treatment SiNx film grow at the rate of 7. 03 nm/min, has a refractive index n = 1.77 and hydrogen content of $2.16{\times}10^{22}cm^{-3}$ for $N_2/SiH_4$ gas flow ratio of 20. The obtained films were analyzed in terms of deposition rates, refractive index, hydrogen concentration, and electrical properties. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of capacitance-voltage (C-V) disappeared. We observed plasma treated sample were decreased the leakage current density reduces by 2 orders with respect to the sample having no plasma treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.43-43
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• 2010

We have characterized the parametric and functional properties of live cell and cancer cell according to plasma treatment conditions using Atmospheric Pressure (AP) Plasma with uniquely designed low temperature arc-free unit. AP plasma system showed very highly efficient capabilities of reacting and interfacing directly with live and cancer cells. The parametric results with the types of gases, applied power, applied gap, and process times on cells will be presented in accordance with functional studies of the works. The growth of cancer cells is directly influenced by AP plasma exposure with evaluating plasma conditions in several human cancer cells and understanding how plasma exposure alters molecular signaling pathways. The cells exhibit a slower or faster growth rates compared with untreated cells, depending on the cell types. These results strongly support the conclusion that alterations in one or more of each gene are responsible, at least in part, for plasma-induced apoptosis in cancer cells. In addition, it also will be presented that AP plasma has an important role for the improvement of sensor performance due to excellent interface property between enzyme and metal electrode for bio sensor manufacturing process.

• Journal of the Semiconductor & Display Technology
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• v.18 no.2
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• pp.98-102
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• 2019

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.