• 한국재료학회지
• /
• 제24권12호
• /
• pp.694-699
• /
• 2014

We report the chemical vapor deposition growth characteristics of graphene on various catalytic metal substrates such as Ni, Fe, Ag, Au, and Pt. 50-nm-thick metal films were deposited on $SiO_2/Si$ substrates using dc magnetron sputtering. Graphene was synthesized on the metal/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90 % Ar (99 SCCM) using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The highest quality of graphene film was achieved on Ni and Fe substrates at $900^{\circ}C$ and 500 W of ICP power. Ni substrate seemed to be the best catalytic material among the tested materials for graphene growth because it required the lowest growth temperature ($600^{\circ}C$) as well as showing a low ICP power of 200W. Graphene films were successfully grown on Ag, Au, and Pt substrates as well. Graphene was formed on Pt substrate within 2 sec, while graphene film was achieved on Ni substrate over a period of 5 min of growth. These results can be understood as showing the direct CVD growth of graphene with a highly efficient catalytic reaction on the Pt surface.

• 청정기술
• /
• 제12권3호
• /
• pp.138-144
• /
• 2006

저압에서 용량성 라디오 주파수 방전을 이용하여 메탄을 합성가스로 전환시키는 반응을 고찰하였다. 플라즈마에서 발생된 높은 에너지를 갖는 전자들이 메탄분자와 산소를 함유하고 있는 기체 분자들과 충돌에 의해 합성가스로 전환되었다. 입력전력, 함산소화합물의 종류, 함산소화합물과 메탄의 조성이 메탄 전환율 및 수소와 일산화탄소의 수율에 미치는 영향을 살펴보았다. 메탄 전환율은 최대 100%이었으며, 합성가스이외의 다른 화합물들은 거의 생성되지 않았다. 입력전력이 증가함에 따라 메탄전환율과 합성가스의 수율이 증가하였으며, 함산소화합물의 종류에 따라 각각 다른 조성의 합성가스를 생성할 수 있었다. 메탄과 함산소화합물을 함께 반응시킴으로써 순수한 합성가스를 제조할 수 있었는데 함산소화합물의 종류에 따라 합성가스의 조성을 조절할 수 있었으며 불순물이 거의 없는 순수한 생성물을 얻을 수 있었다.

• 공업화학
• /
• 제28권2호
• /
• pp.171-176
• /
• 2017

염화이불화메탄($CHClF_2$) 냉매를 완전하게 분해하여 회수하기 위한 질소 플라즈마 열분해 공정이 연구되었다. 과열증기를 공급하여 분해가 보다 원활히 이루어질 수 있도록 스팀 발생기가 부착되었다. 60 A, 9.0 kW 이상의 운전 조건에서 94% 이상의 높은 분해율을 보이지만 탄소 성분의 완전 연소를 위해서는 같은 전류 대비 더 높은 power와 specific energy density를 갖춰야 함이 확인되었다. 60 A, 12.6 kW급 이상의 운전 조건에서는 $O_2$/R-22 ratio가 specific energy density에 비례하여 증가하였을 때 더 높은 분해율을 획득할 수 있었다. 반응물인 산소를 주입하는데 있어서 air를 단독으로 과량 주입하는 것보다는 산소를 air와 혼합하여 주입하는 것이 더 유용함이 밝혀졌다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
• /
• pp.204-204
• /
• 1999

The plasma source ion implantation(PSII) technique which is a method using high negative voltage pulse in plasma system has the potential to change the surface properties of polymer. PSII technique increase the surface free energy by introducing polar functional groups on the surface so that it improves reactivity, hydrophilicity, adhension, biocompatability, etc. However, the mobility of polymer chains enables the modified surface layers to adapt their composition to interfacial force. This hydrophobic recovery interrupts the stability of modified surfaces to keep for the long time. In this study, poly(methyl methacrylate)(PMMA), poly(2-hydroxyethyl methacrylate)(PHEMA), and polu(2-hydroxypropyl methacylate)(PHPMA) for contact lens application, were modified to improve the wettability with PSII technique and were investigated the surface stabilities. Polymer film was prepared with solution casting(3 wt.% solution) and was annealed at 11$0^{\circ}C$ under vacuum oven to remove solvent completely and to eliminate physical ageing. The thickness of the film measured by scanning electron microscopy (SEM) and surface profilometer was about 10${\mu}{\textrm}{m}$. Polymers were treated with different kinds of gases, pulse frequency, pulse with, pulse voltage, and treatment time. Even though PMMA, PHEMA, and PHPMA have similar repeat unit structure, the optimal treatment conditions and the tendency to hydrophobic recovery were different. PHPMA, more hydrophilic polymer than PMMA and PHEMA showd better wettability and stability after mild treatment. Surface tensions were obtained by water and diiodomethane contact angle measurements to monitor the relation between hydrophobic recovery and polymer structure. Different ion species in plasma change the polar component and dispersion component of polymer surface. For better wettability surface, the increase of polar component was a dominant factor. We also characterized modified polymer surfaces using x-ray photoelectron spectroscopy(XPS), secondary ion mass spectrometry(SIMS), Fourier Transform infrared spectroscopy(FT-IR), and SEM.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.361-365
• /
• 2003

Planar Inductively Coupled Plasma (PICP) etching of InGaP was performed in $BCl_3,\;BCl_3/Ar\;and\;BCl_3/Ne$ plasmas as a function of ICP source power ($0\;{\sim}\;500\;W$), RIE chuck power ($0\;{\sim}\;150\;W$), chamber pressure ($5\;{\sim}\;15\;mTorr$) and gas composition of $BCl_3/Ar\;and\;BCl_3/Ne$. Total gas flow was fixed at 20 sccm (standard cubic centimeter per minute). Increase of ICP source power and RIE chuck power raised etch rate of InGaP, while that of chamber pressure reduced etch rate. We also found that some addition of Ar and Ne in $BCl_3$ plasma improved etch rate of InGaP. InGaP etch rate was varied from $1580\;{\AA}/min$ with pure $BC_3\;to\;2800\;{\AA}/min$ and $4700\;{\AA}/min$ with 25 % Ar and Ne addition, respectively. Other process conditions were fixed at 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr chamber pressure. SEM (scanning electron microscopy) and AFM (atomic force microscopy) data showed vertical side wall and smooth surface of InGaP at the same condition. Proper addition of noble gases Ar and Ne (less than about 50 %) in $BCl_3$ inductively coupled plasma have resulted in not only increase of etch rate but also minimum preferential loss and smooth surface morphology by ion-assisted effect.

• 한국표면공학회지
• /
• 제38권5호
• /
• pp.202-206
• /
• 2005

Nitriding treatments were conducted on tool steel (SKD 61) at a temperature of $500^{\circ}C$ for 5 hr using high vacuum direct current (DC) plasma, with ammonia and argon as source gases. The structural and compositional changes produced in the nitrided layers by applying different ratios of Ar to $NH_{3}\;(n_{Ar}/n_{NH3}) were investigated using glancing x-ray diffraction (GXRD), optical microscopy, atomic force microscopy (AFM), micro-Vickers hardness testing, and pin-on-disc type tribometer. Nitriding case depths of around of $50{\mu}m$ were produced, varying slightly with different ratios of $n_{Ar}/n_{NH3}. It was found that the specimen surface hardness was 1150 Hv with $n_{Ar}/n_{NH3}=1, increasing to a maximum value of 1500 Hv with $n_{Ar}/n_{NH3}=5. With a further increase in ratio to $n_{Ar}/n_{NH3}=10, the surface hardness of the specimen reduced slightly to a value of 1370 Hv. These phenomena were caused by changes of the crystallographic structure of the nitride layers, i.e the $\gamma'-Fe_{4}N$ phase only was observed in the sample treated with $n_{Ar}/n_{NH3}$=1, and the intensity of the $\gamma'-Fe_{4}N$ phase were reduced but new phase of $\varepsilon'-Fe_{3}N$, which was known as a high hardness, with increasing $n_{Ar}/n_{NH3}. Also, the relative weight loss of counterface of the pin-on-disc with unnitrided steel was 0.2. And that of nitrided steel at a gas mixture ($n_{Ar}/n_{NH3}) of 1, 5, 7, and 10 was 0.4, 0.7, 0.6, and 0.5 mg, respectively. This means that the wear resistance of the nitrided samples could be increased by a factor of 2 at least than that of unnitrided steel.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.210-210
• /
• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제48권3호
• /
• pp.215-220
• /
• 1999

$SO_2$and CO gas removal characteristics of a wire-to-cylinder type nonthermal discharge plasma reactor in various applied voltage (-dc, ac, fast rising pulse and high frequency pulse) and a crossed dc magnetic field have been investigated. The experiment has been emphasized on the oxidizing characteristics of $SO_2$ and CO gas by $O_3$ and the applying of a crossed magnetic field, which would induce the cyclotronic and drift motions of electrons making the residual time longer in the removal airgap space. And it also would enhance the energy of electrons and the electrophysicochemical actions to remove the pollutant gases effectively. It is found thatthe corona onset voltage and the breakdown voltage were decreased with increasing the crossed magnetic field and decrease initial fed $SO_2$and CO concentration. As a result, a higher ozone generation and $SO_2$ and CO gas removal rate of 20[%] can be obtained with -dc, ac and fast rising pulse corona discharges in the crossed dc current-induced magnetic field. But high frequency pulse didn't show effect in applying of a crossed magnetic field.

• 한국재료학회지
• /
• 제23권1호
• /
• pp.47-52
• /
• 2013

Graphene has been synthesized on 100- and 300-nm-thick Ni/$SiO_2$/Si substrates with $CH_4$ gas (1 SCCM) diluted in mixed gases of 10% $H_2$ and 90% Ar (99 SCCM) at $900^{\circ}C$ by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on $SiO_2$/Si substrate after heat treatment at $900^{\circ}C$ for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/$SiO_2$/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/$SiO_2$/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/$SiO_2$/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and $47cm^{-1}$, respectively. The several-layer graphene showed a low sheet resistance value of $718{\Omega}/sq$ and a high light transmittance of 87% at 550 nm.

• 한국진공학회지
• /
• 제7권4호
• /
• pp.390-396
• /
• 1998

헬리콘(Helicon) 플라즈마로부터 중성입자 흐름을 생성하여 높은 에너지의 이온에 의한 기판의 물리적, 전기적 손상을 방지할 수 있는 실리콘 식각공정이 연구되었다. 기판의 하부에 영구자석을 설치하여 cusp모양의 자계를 형성하므로써 이온 및 전자를 기판으로부 터 제거되도록 하였고 이러한 방법으로 완전히 제거되지 않는 이온의 제거를 위해서 기판 하부에 양의 전압을 가하여 자계나 전계에 영향을 받지 않는 중성입자 흐름을 얻을 수 있도 록 하였다. 발생시킨 자계 및 전계의 의해 기판 상부에서의 전자밀도는 자계나 전계가 가해 지지 않은 경우에 비해 약1/1,000정도로 낮아졌으며, 이온밀도 또한 약1/10정도로 감소하였 다. 이러한 공정을 통해 얻어진 실리콘의 식각속도는 $Cl_2$와 10%의 SF6를 혼합하여 사용할 때 $8.5{\times}10^{-4}$Torr의 압력에서 약100$\AA$/min이하로 매우 낮았으며 실리콘의 식각이 비등방성 을 가지며 진행될 수 있음이 보여졌다.