• Title/Summary/Keyword: Plasma Density

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Analysis of Inductively Coupled Plasma using Electrostatic Probe and Fluid Simulation (정전 탐침법과 유체 시뮬레이션을 이용한 유도결합 Ar 플라즈마의 특성 연구)

  • Cha, Ju-Hong;Lee, Ho-Jun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.7
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    • pp.1211-1217
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    • 2016
  • Discharge characteristics of inductively coupled plasma were investigated by using electrostatic probe and fluid simulation. The Inductively Coupled Plasma source driven by 13.56 Mhz was prepared. The signal attenuation ratios of the electrostatic probe at first and second harmonic frequency was tuned in 13.56Mhz and 27.12Mhz respectively. Electron temperature, electron density, plasma potential, electron energy distribution function and electron energy probability function were investigated by using the electrostatic probe. Experiment results were compared with the fluid simulation results. Ar plasma fluid simulations including Navier-Stokes equations were calculated under the same experiment conditions, and the dependencies of plasma parameters on process parameters were well agreed with simulation results. Because of the reason that the more collision happens in high pressure condition, plasma potential and electron temperature got lower as the pressure was higher and the input power was higher, but Electron density was higher under the same condition. Due to the same reason, the electron energy distribution was widening as the pressure was lower. And the electron density was higher, as close to the gas inlet place. It was found that gas flow field significantly affect to spatial distribution of electron density and temperature.

Effect of Parameters for Dense Bleposit by Plasma (플라즈마에 의한 고밀도침적물 제조시 변수들의 영향)

  • 정인하
    • Journal of Powder Materials
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    • v.5 no.2
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    • pp.111-121
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    • 1998
  • Thick and dense deposit of higher than 97% of theoretical density was formed by induction plasma spraying. To investigate the effects of powder morphology on the density of deposit, two different kinds of Yttria-Stabilized-Zirconia powder, METCO202NS (atomized & agglomerated) and AMDRY146 (fused & crushed), were used and compared. After plasma treatment, porous METCO202NS powder was all the more densely deposited and its density was increased. In addition to the effect of powder morphology, the process parameters such as, sheath gas composition, probe position, particle size and spraying distance, and so on, were evaluated. The result of experiment with AMDRY146 powder, particle size and spraying distance affected highly on the density of the deposit. The optimum process condition for the deposition of -75 ${\mu}m$ of 20%-Yttria-Stabilized-Zirconia powder was 120/201/min of Ar/$H_2$ gas rate, 80 kW of plasma plate power, 8 cm of probe position and 150 Torr of spraying chamber pressure, at which its density showed 97.91% of theoretical density and its deposition rate was 20 mm/min. All the results were assessed by statistical approach what is called ANOVA.

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Gas and Magenetic Field Effect to Low Pressure Plasma

  • Bae, In-Sik;Na, Byeong-Geun;Seol, Yu-Bin;Yu, Sin-Jae;Kim, Jeong-Hyeong;Jang, Hong-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.557-557
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    • 2013
  • Plasma hardly grows in lowpressure because of lack of collision. But low pressure plasma has useful properties because it has typically low electron density. In here, thermal electron is used to make breakdown in low pressure easily. We changed magnetic field strength and gas to control electron density or temperature. IV characteristic and electron density of the discharge are examined and the characteristic of the discharge in presence of magnetic field is also examined. Results showed that depending on the ionization cross section of the gas, electron density is changed and proper strength of magnetic field is required for high electron density.

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Evaporating Particle Behaviors and plasma Parameters by Spectroscopic Method in laser Welding (레이저 용접시 분광학적 수법에 의한 증발입자의 거동과 플라즈마 물성의 계측)

  • 김윤해
    • Journal of Advanced Marine Engineering and Technology
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    • v.23 no.4
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    • pp.514-522
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    • 1999
  • The laser-induced plasma affects greatly on the results of welding process. moreover selective evaporation loss of alloying elements leads to change in chemical composition of weld metal as well as the mechanical properties of welded joint. this study was undertaken to obtain a fundamental knowledge of pulsed laser welding phenomena especially evaporation mechanism of different aluminum alloys. The intensities of molecular spectra of AlO and MgO were different each other depeding on the power density of a laser beam Under the low power density condition the MgO band spectrum was predominant in intensity while the AlO spectra became much stronger with an increase in the power density. These behaviors have been attributed to the difference in evaporation phenomena of Al and Mg metals with different boiling points and latent heats of vaporization. The time-averaged plasma temperature and electron number density were determined by spectroscopic methods and consequently the obtained temperature was $3,280{\pm}150K$ and the electron number density was $1.85{\times}10^{19}\;l/m^3$.

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High-Density Hollow Cathode Plasma Etching for Field Emission Display Applications

  • Lee, Joon-Hoi;Lee, Wook-Jae;Choi, Man-Sub;Yi, Joon-Sin
    • Journal of Information Display
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    • v.2 no.4
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    • pp.1-7
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    • 2001
  • This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

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Characterization of a Helicon Plasma Source (헬리콘 플라즈마원의 특성)

  • 현준원;노승정;김경례;김창연;김현후
    • Journal of the Korean institute of surface engineering
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    • v.32 no.6
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    • pp.658-664
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    • 1999
  • Helicon sources are attractive for plasma processing because they provide high plasma density in low magnetic fields. Helicon waves were excited by a Nagoya type III antenna in a magnetized plasma column. Plasma parameters were measured with a double probe, and the structure and adsorption of the helicon wave fields were determined with the probes. Argon is fed through a MFC (mass flow controller) for operation pressure of 10~110 mtorr. A 13.56 MHz r.f. power of 50~450 W is induced through the antenna. The plasma density and electron temperature are measured as functions of external magnetic field, r.f. power and pressure. The plasma density as functions of r.f. power and magnetic field at a constant pressure increased linearly, and the electron temperature did not change largely with various operation parameters and the value was around 5~7 eV.

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Analysis of First Wafer Effect for Si Etch Rate with Plasma Information Based Virtual Metrology (플라즈마 정보인자 기반 가상계측을 통한 Si 식각률의 첫 장 효과 분석)

  • Ryu, Sangwon;Kwon, Ji-Won
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.4
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    • pp.146-150
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    • 2021
  • Plasma information based virtual metrology (PI-VM) that predicts wafer-to-wafer etch rate variation after wet cleaning of plasma facing parts was developed. As input parameters, plasma information (PI) variables such as electron temperature, fluorine density and hydrogen density were extracted from optical emission spectroscopy (OES) data for etch plasma. The PI-VM model was trained by stepwise variable selection method and multi-linear regression method. The expected etch rate by PI-VM showed high correlation coefficient with measured etch rate from SEM image analysis. The PI-VM model revealed that the root cause of etch rate variation after the wet cleaning was desorption of hydrogen from the cleaned parts as hydrogen combined with fluorine and decreased etchant density and etch rate.

Measurement of characteristics of plasma discharge in liquid

  • Kim, Ju-Sung;Min, Boo-Ki;Kang, Seong-Oun;Choi, Eun-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.153-153
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    • 2015
  • Application of the plasma is already highlighted as a new technology in the last few years. In these days, there are lots of attempt in various application with plasma in that it is known as an effective treatment to animal, plants, material and so on. Plasma in liquid, one of new plasma applications, has advantages in ability to treat bio-cell or solutions. For example, electro-surgery, water purification, radical generation and so on. Especially, plasma discharge in solutions is very useful technique and difficult to generate due to electrolysis, vaporization and something else. In this study, we have performed plasma discharge and checked sustainability of plasma in solution(saline 0.9%). And we have measured basic characteristics of plasma in liquid. Such as electrical energy and plasma density are calculated from discharging current and voltage. Also, its thermal energy is measured with IR camera.

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A Two-dimensional Steady State Simulation Study on the Radio Frequency Inductively Coupled Argon Plasma

  • Lee, Ho-Jun;Kim, Dong-Hyun;Park, Chung-Hoo
    • KIEE International Transactions on Electrophysics and Applications
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    • v.2C no.5
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    • pp.246-252
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    • 2002
  • Two-dimensional steady state simulations of planar type radio frequency inductively coupled plasma (RFICP) have been performed. The characteristics of RFICP were investigated in terms of power transfer efficiency, equivalent circuit analysis, spatial distribution of plasma density and electron temperature. Plasma density and electron temperature were determined from the equations of ambipolar diffusion and energy conservation. Joule heating, ionization, excitation and elastic collision loss were included as the source terms of the electron energy equation. The electromagnetic field was calculated from the vector potential formulation of ampere's law. The peak electron temperature decreases from about 4eV to 2eV as pressure increases from 5 mTorr to 100 mTorr. The peak density increases with increasing pressure. Electron temperatures at the center of the chamber are almost independent of input power and electron densities linearly increase with power level. The results agree well with theoretical analysis and experimental results. A single turn, edge feeding antenna configuration shows better density uniformity than a four-turn antenna system at relatively low pressure conditions. The thickness of the dielectric window should be minimized to reduce power loss. The equivalent resistance of the system increases with both power and pressure, which reflects the improvement of power transfer efficiency.

Electron Density and Electron Temperature in Atmospheric Pressure Microplasma

  • Tran, T.H.;Kim, J.H.;Seong, D.J.;Jeong, J.R.;You, S.J.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.152-152
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    • 2012
  • In this work we measured electron temperature and electron density of a microplasma by optical emission spectroscopy. The plasma is generated from a small discharge gap of a microwave parallel stripline resonator (MPSR) in Helium at atmospheric pressure. The microwave power supplied for this plasma source from 0.5 to 5 watts at a frequency close to 800 MHz. The electron temperature and electron density were estimated through Collisional-radiative model combined with Corona-equilibrium model. The results show that the electron density and temperature of this plasma in the case small discharge gap width are higher than that in larger gap width. The diagnostic techniques and associated challenges will be presented and discussed.

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