• Transactions on Electrical and Electronic Materials
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• 제10권4호
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• pp.111-115
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• 2009

We present a study on the reflection of optically controlled microwave pulses from non uniform plasma layers in semiconductors. The transient response of the microwave pulses in different plasma layers has been evaluated by means of the reflection function of dielectric microstrip lines. The lines were used with an open-ended termination containing an optically induced plasma region, which was illuminated by a light source. The reflection characteristics impedance resulting from the presence of plasma is evaluated by means of the equivalent transmission line model. We have analyzed the variation of the transient response in a 0.01 cm layer with a surface frequency in the region of 128 GHz. In the reflection the variation of the diffusion length $L_D$ is large compared with the absorption depth $1/{\alpha}_l$. The variation of the characteristic response of the plasma layer with differentially localized pulses has been evaluated analytically. The change of the reflection amplitude has been observed at depths of 0.1 cm, 0.01 cm and $0.1{\times}10^{-5}$ cm respectively.

• 한국염색가공학회지
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• 제17권5호
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• pp.26-36
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• 2005

This study was carried to evaluate mechanical characteristics of Poly(ethylene terephthalate) fabrics (by Kawabata evaluation system(KES)) which was systematically treated with $O_2$ low temperature plasma and chitosan acetate solution. Furthermore, surface structure was investigated by SEM, AFM, air permeability and wettability. Tensile energy(WT), shear rigidity(G) and surface roughness(MIU) properties calculated by KES-FB have increased with increasing plasma treatment time, while bending rigidity(G) and energy of compression(WC) value were decreased compared with those of the untreated. SEM photographs showed the identification of chitosan coating but did not confirm the plasma etching structure. Air permeability was decreased according to plasma treatment time with increasing concentrations of chitosan. The water absorption rate made rapid progress by chitosan treatment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• Journal of Korean Vacuum Science & Technology
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• 제3권2호
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• pp.116-120
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• 1999

Possible role of hydrogen atoms on the formation of microcrystalline silicon films was schematically investigated using a plasma enhanced chemical vapor deposition system. A layer-by-layer technique that can alternate deposition of ${\alpha}$-Si thin film and then exposure of H2 plasma was used for this end. The experimental process was extensively carried out under different hydrogen plasma times (t2) at a fixed number of 20 cycles in the deposition. structural properties, such as crystalline volume fractions and grain shapes were analyzed by using a Raman spectroscopy and a scanning electron microscopy. Electrical transports were characterized by the temperature dependence of the dark conductivity that gives rise to the calculation of activation energy (Ea). Optical absorption was measured using an ultra violet spectrophotometer, resulting in the optical energy gap (Eopt). Our experimental results indicate that both of the hydrogen etching and the structural relaxation effects on the film surface seem to be responsible for the growth mechanism of the crystallites in the ${\mu}$c-si films.

• 한국표면공학회지
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• 제54권6호
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• pp.340-347
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• 2021

Among various metal oxide semiconductors, ZnO has an excellent electrical, optical properties with a wide bandgap of 3.3 eV. It can be applied as a photocatalytic material due to its high absorption rate along with physical and chemical stability to UV light. In addition, it is important to control the morphology of ZnO because the size and shape of the ZnO make difference in physical properties. In this paper, we demonstrate synthesis of size-controlled ZnO tetrapods using an atmospheric pressure plasma system. A micro-sized Zn spherical powder was continuously introduced in the plume of the atmospheric plasma jet ignited with mixture of oxygen and nitrogen. The effect of plasma power and collection sites on ZnO nanostructure was investigated. After the plasma discharge for 10 min, the produced materials deposited inside the 60-cm-long quartz tube were obtained with respect to the distance from the plume. According to the SEM analysis, all the synthesized nanoparticles were found to be ZnO tetrapods ranging from 100 to 600-nm-diameter depending on both applied power and collection site. The photocatalytic efficiency was evaluated by color change of methylene blue solution using UV-Vis spectroscopy. The photocatalytic activity increased with the increase of (101) and (100) plane in ZnO tetrapods, which is caused by enhanced chemical effects of plasma process.

• Journal of Pharmaceutical Investigation
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• 제9권3호
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• pp.9-21
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• 1979

This study was undertaken to establish the different pharmaceutical properties between promethazine HCl and promethazine pamoate. First, promethazine pamoate was prepared by using the modified method of Saias. Second, in order to study the different pharmacokinetics between promethazine pamoate and promethazine HCl, absorption rate, plasma concentration, and distribution, as well as urinary excretion of the both compounds were examined in rabbits as an experimental animal: The results were as follows. 1. In the in vitro isolated intestine of rabbit, the rate constant for absorption of promethazine pamoate was $0.347hr^{-1}$ and that of promethazine HCl was $0.532hr^{-1}$. 2. After oral administration of promethazine pamoate, the increase of plasma concentration of promethazine was much slower than that of promethazine HCl. 3. The urinary excretion rate of promethazine pamoate was significantly low in comparison to that of promethazine-HCl; i. e. about 50% of promethazine HCl was excreted within 3 hours, and 5 to 15 hours for that of promethazine pamoate. 4. The tissue concentration of promethazine after oral administration of promethazine pamoate in rabbit was steadily increased for 5 hours. However, promethazine HCl concentration reached to maximum 1 hour after administration, then decreased slowly. 5. A significant amount of promethazine was mainly distributed in spleen, kidney, lung, liver and heart in this order, rather than other organs, such as brain, and muscle. 6. In the toxicity test by using mouse, $LD_{50}$ for promethazine pamoate was 3,250 mg/kg, while $LD_{50}$ for promethazien HCl was 298mg/kg.

• 약학회지
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• 제36권3호
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• pp.259-268
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• 1992

A procedure for the determination of KR-30075 and its metabolites in plasma and urine by high performance liquid chromatography is described. For the study of pharmacokinetic properties of KR-30075, a new PDE III inhibitor, the plasma concentration and urinary excretion after an oral administration of KR-30075 (4 mg/kg) in the male rat (Sprague Dawley) were determined by high performance liquid chromatography. The best extraction efficiency of KR-30075 and KR-30072 is obtained with ethyl ether adjusted to pH 4.0. Retention times of both KR-30072 and KR-30075 were within 5 min and resolution was complete at the flow rate of 1.0 ml/min. The sensitivity and specificity of this HPLC assay appears to be satisfactory for the pharmacokinetic study of KR-30075 and its metabolites. One-compartment open model with first-order absorption was applied to evaluate the pharmacokinetic parameters of KR-30075 according to Minimum AIC Estimation. $T_{max}$ was 1 hr, $C_{max}$ was $0.789{\pm}0.31\;{\mu}g/ml$ and elimination half $T_{1/2}$ was 6.31 min after oral administration of 4 mg/kg KR-30075 to male rats.

• 한국레이저가공학회지
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• 제12권1호
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• pp.7-13
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• 2009

Engineering ceramics as sapphire are widely used in industry owing to their superior mechanical and corrosion properties. However, micromachining of sapphire is a considerable challenge due to its transparency. Recently, direct ablation of sapphire has been demonstrated with a visible laser pulse at sufficiently high laser intensity. In this work, the theoretical model for pulsed laser ablation of sapphire is suggested and numerical analysis is carried out using the model. Sapphire ablation begins with plasma generation by the laser interaction with surface defects, impurities and contaminations in the initial stage of machining. Subsequent absorption of the visible laser beam can be explained by three mechanisms: metalization of sapphire surface due to the EUV radiation from the hot plasma, increments of surface roughness and temperature-dependent absorption coefficient. Comparison of the computation results with experimental observation indicates that the proposed model of sapphire is reasonable.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.136.1-136.1
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• 2015

In the present study, UHF (320 MHz) in combination with RF (13.56 MHz) plasmas was used for the synthesis of hydrogenated silicon nitride (SiNx:H) films by PECVD process at low temperature. RF/UHF hybrid plasmas were maintained at a fixed pressure of 410 mTorr in the N2/SiH4 and N2/SiH4/NH3 atmospheres. To investigate the radical generation and plasma formation and their control for the growth of the film, plasma diagnostic tools like vacuum ultraviolet absorption spectroscopy (VUVAS), optical emission spectroscopy (OES), and RF compensated Langmuir probe (LP) were utilized. Utilization of RF/UHF hybrid plasmas enables very high plasma densities ~ 1011 cm-3 with low electron temperature. Measurements using VUVAS reveal the UHF source is quite effective in the dissociation of the N2 gas to generate more active atomic N. It results in the enhancement of the Si-N bond concentration in the film. Consequently, the deposition rate has been significantly improved up to 2nm/s for the high rate synthesis of highly transparent (up to 90 %) SiNx:H film. The films properties such as optical transmittance and chemical composition are investigated using different analysis tools.

• 한국막학회:학술대회논문집
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• 한국막학회 1998년도 추계 총회 및 학술발표회
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• pp.63-65
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• 1998

1. Introduction : Atmospheric discharge of VOC-contaminated streams in chemical plants and air streams from chemical processes poses a serious environmental problem and entails large financial losses. Such emissions may be reduced by i) adsorption process, ii) absorption process and iii) incineration process. These processes only forbids the air pollutions. Throughout the recent decade, another technique-membrane process has emerged. The separation and recovery of organic vapors by membrane process may have great economic potential. Most of the published research works on the separation of organic vapors from air were performed using silicon rubber membranes. However, it is very difficult to fabricate very thin membranes with less than 1 $u m thickness. Plasma polymerization could be a good technique to generate a thin polymer film. The objective of this work is to find out the optimum condition of plasma polymerization for producing VOC separation membrane. For the objective, composite membranes are prepared through plasma polymerization of hexamethyldisiloxane onto porous substrates under different conditions. The membrane is then subjected to the permeation of permanent gases and VOCs to find the correlations between the physical properties of the penetrant and permeability and selectivity.