• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.468-473
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• 2009

Selective area epitaxy of multiple-stacked InP/InGaAs structures were grown by chemical beam epitaxy. The width of top of the multiple-stacked InP/InGaAs layer which were selectively grown on the stripe lines parallel to the <011> direction was narrowed, while the width of top of the multiple-stacked InP/InGaAs layer on the stripe lines parallel to the <01-1> was widen. This difference according to the <011> and <01-1> direction was explained by the growth of InGaAs <311>A and B faces on the (100) InP surface on the stripe lines parallel to the <01-1> direction. Under growth rate of $1\;{\mu}m/h$, top of the multiple-stacked InP/InGaAs was flattened as the pressure of group V gas was decreased. This phenomenon was understood by the saturation of group V element on the surface.

• Journal of Navigation and Port Research
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• v.38 no.1
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• pp.11-18
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• 2014

To confirm whether the square tank at Changwon National University (CWNU) can be used for estimation of maneuverability, planar motion mechanism (PMM) test and circular motion (CM) test were performed for various conditions. PMM test can be implemented using an XY carriage and a yaw table in the square tank. However, sometimes test section is insufficient for PMM test owing to low length-breadth ratio of the tank. In addition, the speed of a towing carriage is also quite limited. Therefore, it would be useful if PMM test could be effectively performed diagonally, by establishing coupled control logic to drive three servomotors. In addition, Froude number dependency on the estimated hydrodynamic coefficients was checked. Furthermore, CM tests, which cannot be completed in a conventional linear towing tank, were performed, and its results were compared with the results of PMM test. The results of the PMM tests in the diagonal direction were consistent with the results of the test performed in the direction parallel to the sidewall. However, the results of the CM test were greater than those of the PMM test. This tendency was also observed in the results published at Ulsan University.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.22 no.2
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• pp.372-379
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• 1998

A new 6 degrees-of-freedom micro stage, based on parallel mechanisms and actuated by using piezoelectric elements, has been developed for the application of micro positioning such as semiconductor manufacturing devices, high precision optical measurement systems, and high accurate machining. The micro stage structure consists of a base platform and an upper platform(stage). The base platform can effectively generates planar motion with yaw motion, while the stage can do vertical motion with roll and pitch motions with respect to the base platform. This separated structure has an advantage of less interference among actuators. The forward and inverse kinematics of the micro stage are discussed. Also, through linearization of kinematic equations about an operating point on the assumption that the configuration of the micro stage remains essentially constant throughout a workspace is performed. To maximize the workspace of the stage relative to fixed frame, an optimal design procedure of geometric parameter is shown. Hardware description and a prototype are presented. The prototype is about 150mm in height and its base platform is approximately 94mm in diameter. The workspace of the prototype is obtained by computer simulation. Kinematic calibration procedure of the micro stage and its results are presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).