• ETRI Journal
• /
• v.28 no.6
• /
• pp.739-744
• /
• 2006

In this paper, we report numerically calculated results of testing a temperature-insensitive refractive sensor based on a planar-type long-period waveguide grating (LPWG). The LPWG consists of properly chosen polymer materials with an optimized thermo-optic coefficient for the core layer in a four-layer waveguide structure. The resonant wavelength shift below the spectral resolution of the conventional optical spectrum analyzer is obtained accurately over a temperature change of ${\pm}7.5^{\circ}C$ even without any temperature control. The refractive index sensitivity of the proposed grating scheme is about 0.004 per resonant wavelength shift of 0.1 nm for an optimized thermo-optic coefficient.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.651-654
• /
• 2002

We carried out 2-dimensional numerical calculations of electrostatic potential for triode field emitters with planar cathodes using the finite element method. As it turned out, the conventional triode structure with a planar cathode suffered from large gate current and wide spreading of emitted electrons. To circumvent these shortcomings, we proposed a new triode structure. By simply inserting a conducting layer of proper thickness on top of the cathode layer, we were able to modify the electric field distribution on the cathode surface so that low gate current and electron-focusing effect were achieved, simultaneously.

• ETRI Journal
• /
• v.32 no.3
• /
• pp.472-474
• /
• 2010

In this letter, a novel zeroth-order resonant (ZOR) antenna on vialess co-planar waveguide (CPW) is proposed. It is based on a composite right/left-handed CPW transmission line. To achieve a compact size, this antenna utilizes the ZOR condition, and its reactive parameters determine the resonant frequency. Each unit cell is composed of a metallic top patch and meander lines. Since it is realized on the CPW single layer, the proposed antenna has the benefits of being a compact size and easy to fabricate. The bandwidth of 6.8% and efficiency of 62% are experimentally achieved. Its bandwidth is enhanced compared with other ZOR antennas.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
• /
• v.4 no.1
• /
• pp.31-36
• /
• 2005

In this paper, a planar type bandpass filter in multilayered PCB is presented. The multilayered PCB structure has some advantages on fabricating microwave devices such as the size reduction and ability of tight coupling by folding or embedding. The proposed BPF has two transmission zeros at the both sides of the center frequency by using independent electric and magnetic coupling structure. The designed BPF with four layer teflon PCBs of dielectric constant 2.94 has dimensions of 24x20x1.524 in mm, center frequency of 2.47GHz and bandwidth of about l00MHz. A good agrement is achieved between the measured result and the simulated one. The influences of air gaps between the layers are also analyzed and presented.

• Journal of Mechanical Science and Technology
• /
• v.19 no.8
• /
• pp.1649-1661
• /
• 2005

We consider. a horizontal static liquid layer on a planar solid boundary. The layer is evaporating when the plate is heated. Vapor recoil and thermo-capillary are discussed along with the effect of mass loss and vapor convection due to evaporating liquid and non-equilibrium thermodynamic effects. These coupled systems of equations are reduced to a single evolution equation for the local thickness of the liquid layer by using a long-wave asymptotics. The partial differential equation is solved numerically.

• 한국전산유체공학회:학술대회논문집
• /
• 2008.08a
• /
• pp.31.4-31.4
• /
• 2008

• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.262.2-262.2
• /
• 2008

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
• /
• v.29 no.4
• /
• pp.11-17
• /
• 2015

While most switching devices are based on PN junctions, a single layer can realize a switching device in the case of vanadium dioxide($VO_2$) thin films. In this paper, bidirectional current triggering(switching) is demonstrated in a two-terminal planar device based on a $VO_2$ thin film by illuminating the film with an infrared laser at 1550nm. To begin with, a two-terminal planar device, which had a $30{\mu}m$-wide $VO_2$ conducting layer and an electrode separation of $10{\mu}m$, was fabricated. A specific bias voltage range for stable bidirectional laser triggering was experimentally obtained by measuring the current-voltage characteristics of the fabricated device in a current-controlled mode. Then, by constructing a test circuit composed of the device, a standard resistor, and a DC voltage source, connected in series, the transient response of laser-triggered current and its response time were investigated with a DC bias voltage, included in the above specific bias voltage range, applied to the device. In the test circuit with a DC voltage source of 3.35V and a $10{\Omega}$ resistor, bidirectional laser triggering could be realized with a maximum on-state current of 15mA and a switching contrast of ~78.95.

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.3
• /
• pp.9-17
• /
• 2008

Cu mushroom bumps were formed by electrodeposition and flip-chip bonded to Sn substrate pads. Contact resistances of the Cu-mushroom-bump joints were measured and compared with those of the Sn-planar-bump joints. The Cu-mushroom-bump joints, processed at bonding stresses ranging from 19.1 to 95.2 MPa, exhibited contact resistances near $15m\Omega$/bump. Superior contact-resistance characteristics to those of the Sn-planar-bump joints were obtained with the Cu-mushroom-bump joints. Contact resistance of the Cu-mushroom-bump joints was not dependent upon the thickness of the as-elecroplated Sn-capcoating layer ranging from $1{\mu}m$ to $4{\mu}m$. When the Sn-cap-coating layer was reflowed, however, the contact resistance was greatly affected by the thickness and the reflow time of the Sn-cap-coating layer.

• Korean Journal of Optics and Photonics
• /
• v.10 no.6
• /
• pp.518-523
• /
• 1999

In thi, study, we made experiments to fonn a mesa shape by meltback method with various concentration of solutions and found that unsaturated (20%) InGaAsP (1.55 !-tm) solution at a growth temperature was the most suitable for the formation of a mesa ,hape on the wafer which has an InGaAsP active layer and an InP cap layer on an n-InP substrate. It was difficult to form a proper mesa shape for the fabrication of PBH-LDs only by the meltback method; therefore, we fabricated PBH-LDs by forming the mesa shape with the meltback method after wet etching and by growing a current-blocking layer successively. As the electrical and optical charaleri,tiecs of MQW-PBH-LDs fabricated by above methods, when the cavity length was $300{\mu}m$, the threshold current was about 10 mA, internal quantum efficiency 82%, internal loss $9.2cm^{-1}$, and characteristic temperature was 65 K at $25~45^{\circ}C$ and 42 K at $45~65^{\circ}C$. /TEX>.