• Title/Summary/Keyword: Pit growth rate

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The molten KOH/NaOH wet chemical etching of HVPE-grown GaN (HVPE로 성장된 GaN의 용융 KOH/NaOH 습식화학에칭)

  • Park, Jae Hwa;Hong, Yoon Pyo;Park, Cheol Woo;Kim, Hyun Mi;Oh, Dong Keun;Choi, Bong Geun;Lee, Seong Kuk;Shim, Kwang Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.4
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    • pp.135-139
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    • 2014
  • The hydride vapor phase epitaxy (HVPE) grown GaN samples to precisely measure the surface characteristics was applied to a molten KOH/NaOH wet chemical etching. The etching rate by molten KOH/NaOH wet chemical etching method was slower than that by conventional etching methods, such as phosphoric and sulfuric acid etching, which may be due to the formation of insoluble coating layer. Therefore, the molten KOH/NaOH wet chemical etching is a better efficient method for the evaluation of etch pits density. The grown GaN single crystals were characterized by using X-ray diffraction (XRD) and X-ray rocking curve (XRC). The etching characteristics and surface morphologies were studied by scanning electron microscopy (SEM). From etching results, the optimum etching condition that the etch pits were well independently separated in space and clearly showed their shape, was $410^{\circ}C$ and 25 min. The etch pits density obtained by molten KOH/NaOH wet chemical etching under optimum etching condition was around $2.45{\times}10^6cm^{-2}$, which is commercially an available materials.

Identification of Pseudomonas fluorescens antagonistic to Pseudomonas tolaasii and its cultivation (버섯의 갈변병 유발세균 Pseudomonas tolaasii의 길항세균인 Pseudomonas fluorescens의 분리동정 및 배양조건)

  • 박범식;조남철전억한
    • KSBB Journal
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    • v.7 no.4
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    • pp.296-301
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    • 1992
  • A Pseudomonas fluorescens was selected from mushrooms and studied in both batch and fed-batch cultures in order to get maximal biomass concentration. P. fluorescens is an aerobic bacterium and antagonistic to Pseudomonas tolaasii which causes blotch disease on the mushroom cap. P fluarescens and P. tolaasii were identified by Gram staining, gelatin liquefaction, oxidase test, etc. and were characterized by pigment production, temperature sensitivity, salt tolerance and rapid pitting test, etc., Celts of P. fluorescens well in medium containing 30g/L of glucose, whereas the growth was inhibited at the glucose levels at higher than 30g/L. The highest values of specific growth rate and productivity were obtained when using 10g/1 of yeast extract. Optimum concentrations of $NH_4Cl$ and ${(NH_4Cl)}_2SO_4$ for culture were found to be 1.0g/L and 0.1g/L respectively. Optimum concentration of $MgSO_4{\cdot}7H_2O$ used as a sulfursource was 1.0g/L. It was also found that the cell concentrations reached the maximum level when grown on the medium containing 1.0g/L of $KH_2PO_4$ and 0.1g/L of $CaCl_2$. Also, the optimum culture conditions were $30^{\circ}C$ and pH 6.0. Cultivation of P. fluarescens at high dissolved oxygen (DO) concentration led to a decrease of bacterial productivity in batch culture. Maximum productivity was achieved at 40% DO concentration.

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Thickness optimization of the bulk GaN single crystal grown by HVPE processing variable control (HVPE 법에서의 공정변수 조절에 의한 bulk GaN 단결정의 두께 최적화)

  • Park, Jae Hwa;Lee, Hee Ae;Lee, Joo Hyung;Park, Cheol Woo;Lee, Jung Hun;Kang, Hyo Sang;Kang, Suk Hyun;Bang, Sin Young;Lee, Seong Kuk;Shim, Kwang Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.27 no.2
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    • pp.89-93
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    • 2017
  • GaN single crystals were grown by controlling of various processing parameters such as growing temperature, V/III ratio and growing rate. We optimized thickness of bulk GaN single crystal by analyzing defect of surface and inside of the GaN single crystal for application to high brightness and power device. 2-inch bulk GaN single crystals were grown by HVPE (hydride vapor phase epitaxy) on sapphire and their thickness was 0.3~7.0 mm. Crystal structure of the grown bulk GaN was analyzed by XRD (X-ray diffraction). The surface characteristics of the grown bulk GaN were observed by OM (optical microscope) and SEM (scanning electron microscopy) with measuring EPD (etch pits density) of the GaN crystals.

Field Study of Emission Characteristics of Ammonia and Hydrogen Sulfide by Pig Building Types (돈사 작업장 유형에 따른 암모니아와 황화수소의 실내농도 및 발생량에 관한 현장 조사)

  • Kim, Ki Youn;Park, Jae Beom;Kim, Chi-Nyon;Lee, Kyung Jong
    • Journal of Korean Society of Occupational and Environmental Hygiene
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    • v.16 no.1
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    • pp.36-43
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    • 2006
  • The principal aim of this field study was to determine the concentrations and emissions of gaseous contaminants such as ammonia and hydrogen sulfide in the different types of pig buildings in Korea and allow objective comparison between Korea and the other countries in terms of pig housing types. This field study was performed from May to June and from September to October in 2002. Pig buildings investigated in this research were selected in terms of three criteria; manure removal system, ventilation mode and growth stage of pig. Measurements of concentration and emission of ammonia and hydrogen sulfide in the pig buildings were done in 5 housing types and the visited farms were 15 sites per each housing type. Concentrations of ammonia and hydrogen sulfide were measured at three locations of the central alley in the pig building and emission rates of them were estimated by multiplying the average concentration($mg/m^3$) measured near the air outlet by the mean ventilation rate($m^3/h$) and expressed either per pig of liveweight 75kg(mg/h/pig) or per area($mg/h/m^2$). Concentrations of ammonia and hydrogen sulfide in the pig buildings were averaged to 7.5 ppm and 286.5 ppb and ranged from 0.8 to 21.4 ppm and from 45.8 to 1,235 ppb, respectively. The highest concentrations of ammonia and hydrogen sulfide were found in the mechanically ventilated buildings with slats; 12.1 ppm and 612.8 ppb, while the lowest concentrations of ammonia and hydrogen sulfide were found in the pig buildings with deep-litter bed system(2.2 ppm) and the naturally ventilated pig buildings with manure removal system by scraper(115.2 ppb), respectively(p<0.05). All the pig buildings were investigated not to exceed the threshold limit values(TLVs) of ammonia(25 ppm) and hydrogen sulfide(10 ppm). The mean emissions of ammonia and hydrogen sulfide per pig(75kg in terms of liveweight) and area($m^2$) from pig buildings were 250.2 mg/h/pig and 37.8 mg/h/pig and $336.3mg/h/m^2$ and $50.9mg/h/m^2$, respectively. The pig buildings with deep-litter bed system showed the lowest emissions of ammonia and hydrogen sulfide(p<0.05). However, the emissions of ammonia and hydrogen sulfide from the other pig buildings were not significantly different(p>0.05). Concentrations and emissions of ammonia and hydrogen sulfide were relatively higher in the pig buildings managed with deep-pit manure system with slats and mechanical ventilation mode than the different pig housing types. In order to prevent pig farm workers from adverse health effect caused by exposure to ammonia and hydrogen sulfide in pig buildings, they should wear the respirators during shift and be educated sustainably for the guideline related to occupational safety.