• Transactions on Electrical and Electronic Materials
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• v.13 no.5
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• pp.215-220
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• 2012

Miniature ultrasonic and tactile sensors on Si substrate have been proposed, fabricated and characterized to detect objects for a dexterous robot. The ultrasonic sensor consists of piezoelectric PZT thin film on a Pt/Ti/$SiO_2$ and/or Si diaphragm fabricated using a micromachining technique; the ultrasonic sensor detects the piezoelectric voltage as an ultrasonic wave. The sensitivity has been enhanced by improving the device structure, and the resonant frequency in the array sensor has been equalized. Position detection has been carried out by using a sensor array with high sensitivity and uniform resonant frequency. The tactile sensor consists of four or three warped cantilevers which have NiCr or $Si:B^+$ piezoresistive layer for stress detection. Normal and shear stresses can be estimated by calculation using resistance changes of the piezoresitive layers on the cantilevers. Gripping state has been identified by using the tactile sensor which is installed on finger of a robot hand, and friction of objects has been measured by slipping the sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.134-138
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$nd annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.135-141
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by OC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$ and annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.573-576
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromium nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5∼25 %)Na$_2$). The deposited CrN thin-films with thickness of 3577${\AA}$ and annealing conditions(300$^{\circ}C$, 48 hr) in Ar-10 % N$_2$deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho$=1147.65 ${\mu}$$\Omega$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.20 no.2
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• pp.408-413
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• 1996

A self-diagnostic, air-damped, piezoresitive, cantilever-beam microaccelerometer has been designed, fabricated and tested for applications to automotive electronic airbag systems. A skew-symmetric proof-mass has been designed for self-diagnostic capability and zero transverse sensitivity. Two kinds of multi-step anisotropic etching processes are developed for beam thickness control and fillet-rounding formation, UV-curing paste has been used for sillicon-to-glass bounding. The resonant frequency of 2.07kHz has been measured from the fabricated devices. The sensitivity of 195 $\mu{V}$/g is obtained with a nonlinearity of 4% over $\pm$50g ranges. Flat amplitude response and frequency-proportional phase response have been obserbed, It is shown that the design and fabricaiton methods developed in the present study yield a simple, practical and effective mean for improving the performance, reliability as well as the reproducibility of the accelerometers.